INFINEON BAT 62 User Manual
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查询BAT 62供应商
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
BAT 62
3
frequencies
4
1
14
EHA07020
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 62 62s 1 = A1 2 = C2 3 = A2 4 = C1 SOT-143
Maximum Ratings
Parameter
Diode reverse voltage
Symbol Value Unit
V
R
40 V
2
VPS05178
32
Forward current
I
Total power dissipation, TS ≤ 85 °C P
Junction temperature
Storage temperature
T
T
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
R
R
F
tot
j
st
thJA
thJS
20 mA
100 mW
150 °C
-55 ... 150
≤ 810
≤ 650
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Oct-07-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAT 62
Parameter
DC characteristics
Reverse current
V
= 40 V
R
Forward voltage
I
= 2 mA
F
AC characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Case capacitance
f = 1 MHz
Differential resistance
V
= 0 V, f = 10 kHz
R
Series inductance
Symbol Values Unit
min. typ. max.
I
V
C
C
R
L
R
F
T
C
0
s
- - 10 µA
- 0.85 1 V
- 0.35 0.6 pF
- 0.1 -
- 225 -
kΩ
- 2 - nH
Forward current IF = f (VF)
T
= Parameter
A
2
10
Ι
F
mA
1
10
0
10
-1
10
-2
10
0.0
0.5 1.0 1.5 2.0V
=25125
A
85
-40
EHD07060BAT 62
˚CT
˚C
˚C
˚C
Forward current IF = f (TA*; T
S)
* Package mounted on alumina
30
mA
Ι
F
20
10
0
0˚C
V
F
50 100 150
EHD07064BAT 62
T
S
T
A
T ; T
A
S
Oct-07-19992
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