Infineon BAT18-04, BAT18-05, BAT18-06 Schematic [ru]
Silicon RF Switching Diode
g
BAT 18 ...
• Low-loss VHF / UHF switch above 10 MHz
• PIN diode with low forward resistance
1
3
BAT 18-05
3
13
EHA07002
1
2
EHA07005
1
3
2
EHA07004
Type Marking Pin Configuration Package
BAT 18
BAT 18-04
A2s
AUs
1 = A
1 = A1
2 n.c.
2 = C2
BAT 18-06BAT 18-04BAT 18
1
3 = C
3 = C1/A2
3
2
EHA07006
SOT-23
SOT-23
2
VPS05161
BAT 18-05
BAT 18-06
ASs
ATs
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient
1)
1 = A1
1 = C1
2 = A2
2 = C2
3 = C1/2
3 = A1/2
SOT-23
SOT-23
Symbol Value Unit
V
I
T
T
R
F
R
op
st
thJA
35 V
100 mA
-55 ... 150 °C
-55 ... 150
≤ 450
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Oct-07-19991
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
BAT 18 ...
Parameter
DC characteristics
Reverse current
V
= 20 V
R
Reverse current
V
= 20 V, TA = 60 °C
R
Forward voltage
I
= 100 mA
F
AC characteristics
Diode capacitance
V
= 20 V, f = 1 MHz
R
Forward resistance
I
= 5 mA, f = 100 MHz
F
Symbol Values Unit
min. typ. max.
I
I
V
C
L
R
R
F
T
f
s
- - 20 nA
- - 200
- 0.38 1.2 mV
0.75-
- 0.4 0.7
pF
1
Ωr
- 2 - nHSeries inductance
Diode capacitance CT = f (VR)
f = 1MHz
2.0
pF
C
T
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10 20 V 30
Forward resistance rf = f (IF)
f = 100MHz
EHD07019BAT 18...
V
R
1
10
r
f
Ω
0
10
-1
10
-1 0
10
10
10
EHD07020BAT 18...
1
Ι
F
2
10mA
Oct-07-19992
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