Silicon Schottky Diode
• For mixer applications in VHF/UHF range
• For high-speed switching application
• Pb-free (RoHS compliant) package
BAT17...
BAT17 BAT17-05
BAT17-05W
!
,
,
!
BAT17-04W
!
,
,
BAT17-06W BAT17-07BAT17-04
!
,
,
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration L
BAT17
BAT17-04
BAT17-04W
BAT17-05
BAT17-05W
BAT17-06W
BAT17-07
SOT23
SOT23
SOT323
SOT23
SOT323
SOT323
SOT143
single
series
series
common cathode
common cathode
common anode
parallel pair
(nH) Marking
S
1.8
1.8
1.4
1.8
1.4
1.4
2
!"
,
,
53s
54s
54s
55s
55s
56s
57s
1
2011-06-15
Maximum Ratings at TA = 25°C, unless otherwise specified
BAT17...
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
BAT17, T
BAT17-04, T
BAT17-05,T
≤ 77°C
S
≤ 61°C
S
≤ 46°C
S
BAT17-04W, -05W, -6W, T
BAT17-07, T
≤ 60 °C
S
≤ 92 °C
S
P
Junction temperature T
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol Value Unit
R
BAT17
R
F
tot
j
op
st
thJS
4 V
130 mA
150
150
150
150
150
150 °C
-55 ... 125
-55 ... 150
≤ 490
mW
K/W
BAT17-04, BAT17-07
BAT17-05
BAT17-04W, BAT17-05W, BAT17-06W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
≤ 590
≤ 690
≤ 390
2
2011-06-15
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAT17...
Parameter
DC Characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 3 V
R
V
= 4 V
R
V
= 3 V, TA = 60 °C
R
Forward voltage
I
= 0.1 mA
F
I
= 1 mA
F
I
= 10 mA
F
Forward voltage matching1)
I
= 1 mA
F
Symbol Values Unit
min. typ. max.
V
(BR)
I
R
V
F
∆ V
F
4 - - V
-
-
-
200
250
350
-
-
-
275
340
425
0.25
10
1.25
350
450
600
- - 20
µA
mV
AC Characteristics
Diode capacitance
V
= 0 , f = 1 MHz
R
Differential forward resistance
I
= 5 mA, f = 10 kHz
F
1
∆V
is the difference between lowest and highest VF in multiple diode component.
F
C
R
T
F
0.4 0.55 0.75 pF
- 8 15 Ω
3
2011-06-15