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Silicon Schottky Diode
Medium current Schottky rectifier diode
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Miniature plastic package for surface
mounting (SMD)
BAT165
BAT165...
1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT165 SOD323 single C/White
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Forward current I
Surge forward current, (t 10ms) I
Average forward current (50/60Hz, sinus) I
Total power dissipation
66°C
T
S
Junction temperature T
Symbol Value Unit
R
F
FSM
FAV
P
tot
j
40 V
750 mA
2.5 A
500 mA
600 mW
150 °C
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
1
stg
-65 ... 150
Symbol Value Unit
R
thJS
140
K/W
Nov-07-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified
BAT165...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
V
= 30 V, TA = 65 °C
R
Forward voltage
= 10 mA
I
F
I
= 100 mA
F
I
= 250 mA
F
I
= 750 mA
F
AC Characteristics
Diode capacitance
V
= 10 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
C
I
V
R
F
T
-
-
-
-
-
-
-
-
0.305
0.38
0.44
0.58
50
900
0.4
-
0.7
-
µA
V
- 8.4 12 pF
2
Nov-07-2002

BAT165...
Diode capacitance CT = (VR)
f = 1MHz
40
pF
34
30
T
C
26
22
18
14
10
6
0 2 4 6 8 10 12
Reverse current IR = (VR)
= Parameter
T
A
-4
10
A
-5
10
65°C
-6
45°C
10
R
I
V
15
V
R
25°C
-7
10
0°C
-8
10
-20°C
-9
10
-10
10
-40°C
-11
10
0 4 8 12 16 20 24
V
30
V
R
Forward current IF = (VF)
= Parameter
T
A
0
10
A
-1
10
-2
F
I
10
-3
10
-4
10
-5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
TA= -40 °C
= -20
= 0
= 25
= 45
= 65
= 85
V
Forward current IF = (TS)
800
mA
600
500
F
I
400
300
200
100
0.8
V
F
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
3
Nov-07-2002