查询BAT 14-099R供应商
Silicon Crossover Ring Quad Schottky Diode
• Medium barrier diode for double balanced mixer,
BAT 14-099R
3
phase detectors and modulators
4
1
4
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
SOT-143BAT 14-099R S8s 1=A1/C4 2=C2/A3 3=C1/A2 4=C3/A4
Maximum Ratings
Parameter
Symbol Value Unit
3
2
EHA07012
2
VPS05178
Forward current
Total power dissipation, TS ≤ 70 °C
Junction temperature
Operating temperature range -55 ... 150 °C
Storage temperature -55 ... 150 °C
I
P
T
T
T
F
tot
j
op
st
90 mA
100 mW
150 °C
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
R
R
thJA
thJS
≤1020
≤780
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Oct-07-19991
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
BAT 14-099R
Parameter
DC characteristics (per diode)
V
F
I
= 1 mA
F
I
= 10
F
∆V
I
= 10 mA
F
AC characteristics (per diode)
Diode capacitance
= 0 V, f = 1 MHz
V
R
Forward resistance
C
R
T
F
IF = 10mA / 50mA
1) ∆VF is difference between lowest and highest VF in component
ValuesSymbol Unit
typ. max.min.
-
-
F
- - 20 mVForward voltage matching 1)
0.4
0.48
VForward voltage
-
-
0.38 -- pF
5.5-
-
Ω
Forward current IF = f (VF)
T
= Parameter
A
2
10
Ι
F
A
m
1
10
0
10
-1
10
-2
10
0.0
0.5 1.0V
Forward current IF = f (TA*; T
S)
* Package mounted on alumina
EHD07089BAT 14-099R
-40 ˚CT
=
A
25
˚C
85
˚C
125
˚C
V
F
100
Ι
F
mA
80
T
A
60
40
20
0
0˚C
50 100 150
EHD07090BAT 14-099R
T
S
T ; T
S
A
Oct-07-19992