INFINEON BAT 14-077S User Manual

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Silicon Single Flip Chip Schottky

BAT 14-077S

Diode

Preliminary Data Sheet

• Single Schottky medium Barrier Mixer Diode

• For W-band application up to 80 GHz

ESD: Electrostatic discharge sensitive device,
observe handling precautions!

Type Marking Ordering Code Pin Configuration Package

BAT 14-077S – Q62702-D1353 – – – FLIP CHIP 1

EHT09238

Maximum Ratings
Parameter Symbol Value Unit

Diode reverse voltage
Forward current
Total power dissipation (

T

= 25 °C) P

S

Junction temperature
Operating temperature range
Storage temperature

V
I

T
T
T

F

R

tot

j

op

stg

3V
25 mA
20 mW
150 °C
– 40 … + 150 °C
– 55 … + 150 °C

Data Sheet 1 2001-01-01

GaAs Components

BAT 14-077S

Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

DC Characteristics

Breakdown voltage

Forward voltage

V
V

(BR)

F

3–– V I

= 10 µA

(BR)

– 0.4 0.5 V IF = 100 µA

AC Characteristics

Diode capacitance
Forward resistance

1)

Simulated values test conditions t.b.f.

1)

C
R

T

F

– 30 – fF VR = 0 V
– 710Ω IF = 10 mA

Data Sheet 2 2001-01-01