INFINEON BAT 14-077D User Manual

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Silicon Dual Flip Chip Schottky Diode BAT 14-077D
Preliminary Data Sheet
Dual Schottky medium Barrier Mixer Diode
For W-band application up to 80 GHz
ESD: Electrostatic discharge sensitive device,
EHT09236
observe handling precautions!
BAT 14-077D Q62702-D1354 FLIP CHIP
Maximum Ratings Parameter Symbol Value Unit
Diode reverse voltage Forward current Total power dissipation (
T
= 25 °C) P
S
Junction temperature Operating temperature range Storage temperature
V I
T T T
F
R
tot
j
op
stg
3V 25 mA 20 mW 150 °C – 40 … + 150 °C – 55 … + 150 °C
Data Sheet 1 2001-01-01
GaAs Components
BAT 14-077D
Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
DC Characteristics
Breakdown voltage
Forward voltage
V V
(BR)
F
3–– V I
= 100 µA
(BR)
0.4 0.5 V IF = 100 µA
AC Characteristics
Diode capacitance Forward resistance
1)
Simulated values test conditions t.b.f.
1)
C R
T
F
30 fF VR = 0 V – 710 IF = 10 mA
Data Sheet 2 2001-01-01
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