• Pin and functionally compatible with IDT720x family
• Status Flags: Empty, Half-Full, Full
• Retransmit capability
• High-performance CMOS technology
• Industrial temperature range (-40oC to +85oC) is available, tested to military electrical specifications
DESCRIPTION:
The IDT7208 is a monolithic dual-port memory buffer with
FUNCTIONAL BLOCK DIAGRAM
W
WRITE
CONTROL
•
internal pointers that load and empty data on a first-in/first-out
basis. The device uses Full and Empty flags to prevent data
overflow and underflow and expansion logic to allow for
unlimited expansion capability in both word size and depth.
Data is toggled in and out of the device through the use of
the Write (W) and Read (R) pins.
The device's 9-bit width provides a bit for a control or parity
at the user’s option. It also features a Retransmit (RT) capability that allows the read pointer to be reset to its initial position
when RT is pulsed LOW. A Half-Full Flag is available in the
single device and width expansion modes.
The IDT7208 is fabricated using IDT’s high-speed CMOS
technology. It is designed for applications requiring asynchronous and simultaneous read/writes in multiprocessing, rate
buffering, and other applications.
DATA INPUTS
0
)
(D –D8
RAM ARRAY
65,536 x 9
DATA OUTPUTS
0(Q
)
–Q
8
•
•
EFFF
XO/HF
•
POINTER
•
READ
RESET
LOGIC
FL/RT
RS
3274 drw 01
R
•
XI
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.061
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
1
W
2
D
8
3
D
3
4
2
D
5
D
D
FF
Q
Q
Q
Q
Q
GND
1
0
XI
0
1
2
3
8
6
7
8
9
10
11
12
13
14
P28-1
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
SymbolRating CommercialUnit
V
TERMTerminal Voltage with–0.5 to + 7.0V
Respect to GND
T
AOperating Temperature0 to +70° C
T
BIASTemperature Under Bias –55 to +125° C
T
STGStorage Temperature–55 to + 125° C
I
OUTDC Output Current50mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
DIP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
D
4
D
5
6
D
D
7
FL/RTRSEFXO/HF
Q
7
Q
6
5
Q
Q
4
R
3274 drw 02
(1)
INDEX
2
D
D
1
D
0
XI
FF
Q
0
Q
1
NC
2
Q
5
6
7
8
9
10
11
12
13
3
8
D
D
432
J32-1
141516
3
8
Q
Q
W
GND
NC
Vcc
32
1
171819
R
NC
4
D5D
30
31
29
6
D
28
D
7
27
NC
26
FL/RT
25
RS
24
EF
23
XO/HF
22
Q
7
21
Q
6
20
5
4
Q
Q
3274 drw 03
PLCC
TOP VIEW
RECOMMENDED DC OPERATING
CONDITIONS
SymbolParameterMin.Typ.Max.Unit
V
CCCCommercial Supply4.55.05.5V
Voltage
GNDSupply Voltage000V
(1)
V
IH
V
IL
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
Input High Voltage2.0——V
Commercial
(1)
Input Low Voltage——0.8V
Commercial
DC ELECTRICAL CHARACTERISTICS FOR THE 7208
(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C)
IDT7208
Commercial
t
A = 20, 25, 35 ns
SymbolParameterMin.Typ.Max.Unit
(1)
LI
I
(2)
LO
I
OHOutput Logic “1” Voltage IOH = –2mA2.4——V
V
OLOutput Logic “0” Voltage IOL = 8mA——0.4V
V
(3)
CC1
I
(3)
CC2
I
(3)
CC3(L)
I
NOTES:
1. Measurements with 0.4 ≤ V
2. R ≥ V
3. I
4. Tested at f = 20MHz.
IH, 0.4 ≤ VOUT≤ VCC.
CC measurements are made with outputs open (only capacitive loading).
Input Leakage Current (Any Input)–1—1µA
Output Leakage Current–10—10µA
Active Power Supply Current——120
(4)
Standby Current (R=W=RS=FL/RT=VIH)——12mA
Power Down Current (All Input = VCC - 0.2V)——8mA
IN≤ VCC.
5.062
mA
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9COMMERCIAL TEMPERATURE RANGES
DATA IN (D0–D8) — Data inputs for 9-bit wide data.
Controls:
RESET (
(RS) input is taken to a LOW state. During reset, both internal
read and write pointers are set to the first location. A reset is
required after power-up before a write operation can take place.
Both the Read Enable (
be in the HIGH state during the window shown in Figure 2
(i.e. tRSS before the rising edge of
change until tRSR after the rising edge of
WRITE ENABLE (
edge of this input if the Full Flag (FF) is not set. Data set-up and
hold times must be adhered-to, with respect to the rising edge
of the Write Enable (W). Data is stored in the RAM array
sequentially and independently of any on-going read operation.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (HF) will be set to LOW,
and will remain set until the difference between the write pointer
and read pointer is less-than or equal to one-half of the total
memory of the device. The Half-Full Flag (HF) is reset by the
rising edge of the read operation.
To prevent data overflow, the Full Flag (FF) will go LOW on
the falling edge of the last write signal, which inhibits further write
operations. Upon the completion of a valid read operation, the
Full Flag (FF) will go HIGH after t
to begin. When the FIFO is full, the internal write pointer is
blocked from W, so external changes in W will not affect the FIFO
when it is full.
RSRS) — Reset is accomplished whenever the Reset
RR) and Write Enable (
WW) inputs must
RSRS) and should not
RSRS.
WW) — A write cycle is initiated on the falling
RFF, allowing a new valid write
5V
1.1K
Ω
D.U.T.
30pF*
3274 drw 04
*Includes jig and scope capacitances.
READ ENABLE (
Ω
680
OR EQUIVALENT CIRCUIT
Figure 1. Output Load
RR) — A read cycle is initiated on the falling
edge of the Read Enable (R), provided the Empty Flag (EF) is not
set. The data is accessed on a First-In/First-Out basis, independent of any ongoing write operations. After Read Enable (R)
goes HIGH, the Data Outputs (Q0 through Q8) will return to a
high-impedance condition until the next Read operation. When
all the data has been read from the FIFO, the Empty Flag (EF)
will go LOW, allowing the “final” read cycle but inhibiting further
read operations, with the data outputs remaining in a highimpedance state. Once a valid write operation has been accomplished, the Empty Flag (EF) will go HIGH after t
WEF and a valid
Read can then begin. When the FIFO is empty, the internal read
pointer is blocked from R so external changes will not affect the
FIFO when it is empty.
FIRST LOAD/RETRANSMIT (
FLFL/
RTRT) — This is a dual-
purpose input. In the Depth Expansion Mode, this pin is
grounded to indicate that it is the first device loaded (see
Operating Modes). The Single Device Mode is initiated by
grounding the Expansion In (XI).
The IDT7208 can be made to retransmit data when the
Retransmit Enable Control (RT) input is pulsed LOW. A retransmit operation will set the internal read pointer to the first location
and will not affect the write pointer. The status of the Flags will
change depending on the relative locations of the read and write
pointers. Read Enable (R) and Write Enable (W) must be in the
HIGH state during retransmit. This feature is useful when less
than 65,536 writes are performed between resets. The retransmit feature is not compatible with the Depth Expansion Mode.
EXPANSION IN (
XIXI) — This input is a dual-purpose pin.
Expansion In (XI) is grounded to indicate an operation in the
single device mode. Expansion In (XI) is connected to Expansion Out (XO) of the previous device in the Depth Expansion or
Daisy-Chain Mode.
5.064
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