HIGH-SPEED
16K x 8 DUAL-PORT
STATIC RAM
Feature s
◆
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
◆
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
◆
Low-power operation
– IDT7006S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7006L
Active: 700mW (typ.)
Standby: 1mW (typ.)
◆
IDT7006 easily expands data bus width to 16 bits or more
using the Master/Slave select when cascading more than
one device
Functional Block Diagram
OE
L
CE
L
R/W
L
IDT7006S/L
◆
M/S = H for BUSY output flag on Master,
M/S = L for BUSY input on Slave
◆
Busy and Interrupt Flags
◆
On-chip port arbitration logic
◆
Full on-chip hardware support of semaphore signaling
between ports
◆
Fully asynchronous operation from either port
◆
Devices are capable of withstanding greater than 2001V
electrostatic discharge
◆
Battery backup operation—2V data retention
◆
TTL-compatible, single 5V (±10%) power supply
◆
Available in 68-pin PGA, quad flatpack, PLCC, and a 64-pin
TQFP
◆
Industrial temperature range (–40°C to +85°C) is available
for selected speed
◆
Green parts available, see ordering information
OE
R
CE
R
R/W
R
I/O0L-I/O
NOTES:
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.
2. BUSY outputs and INT outputs are non-tri-stated push-pull.
©2006 Integrated Device Technology, Inc.
BUSY
A
A
SEM
INT
13L
7L
(1,2)
L
Address
0L
L
(2)
L
Decoder
CE
OE
R/W
14
L
L
L
I/O
Control
MEMORY
ARRAY
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
M/S
1
I/O
Control
I/O0R-I/O
BUSY
Address
Decoder
14
CE
R
OE
R
R/W
R
A
A
SEM
INT
2739 drw 01
13R
0R
7R
(1,2)
R
R
(2)
R
JANUARY 2006
DSC 2739/15
IDT7006S/L
.
High-Speed 16K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Description
The IDT7006 is a high-speed 16K x 8 Dual-Port Static RAM. The
IDT7006 is designed to be used as a stand-alone 128K-bit Dual-Port RAM
or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more
word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach
in 16-bit or wider memory system applications results in full-speed, errorfree operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 750mW of power. Low-power (L)
versions offer battery backup data retention capability with typical power
consumption of 500µW from a 2V battery.
The IDT7006 is packaged in a ceramic 68-pin PGA, an 68-pin quad
flatpack, a PLCC, and a 64-pin thin quad flatpack, TQFP. Military grade
product is manufactured in compliance with the latest revision of MIL-PRF38535 QML, Class B, making it ideally suited to military temperature
applications demanding the highest level of performance and reliability.
Pin Configurations
L
L
C
W
E
/
/
O
N
R
68 Pin PLCC / Flatpack
R
R
R
R
E
O
E
M
W
/
C
E
R
S
INDEX
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
L
L
0
1
O
O
/
/
I
I
98765432168676665
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32 33 34 35 36 37 38 39
R
C
7
/
N
O
/
I
(1,2,3)
L
M
E
S
IDT7006J or F
L
C
E
/
C
N
J68-1
F68-1
TopView
R
C
D
3
/
1
N
N
A
G
L
3
1
A
(4)
(4)
(5)
R
2
1
A
L
L
L
C
2
1
0
L
1
9
A
A
64 63 62 61
40 41 42 43
R
R
R
9
8
7
A
A
A
L
8
A
R
6
A
1
1
C
A
A
V
R
R
1
0
1
1
A
A
NOTES:
CC pins must be connected to power supply.
1. All V
2. All GND pins must be connected to ground supply.
3. J68-1 package body is approximately .95 in x .95 in. x .17 in.
F68-1 package body is approximately .97 in x .97 in x .08 in.
PN64-1 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking
L
7
A
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
L
6
A
R
2739 drw 02
5
A
11/06/01
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
BUSY
GND
M/S
BUSY
INT
A
0R
A
1R
A
2R
A
3R
A
4R
L
L
R
R
INDEX
I/O
I/O
I/O
I/O
GND
I/O
I/O
V
GND
I/O
I/O
I/O
V
I/O
I/O
I/O
CC
CC
L
L
1
O
/
I
4
6
1
2L
2
3L
3
4L
4
5L
5
6
6L
7
7L
8
9
10
0R
11
1R
12
2R
13
14
3R
15
4R
5R
7
16
1
R
6
O
/
I
L
L
L
0
E
O
/
O
I
3
2
6
6
L
L
M
W
/
E
S
R
1
6
C
3
E
1
C
A
C
V
0
9
8
5
6
5
7006PF
PN-64
64 Pin TQFP
Top View
0
8
9
2
1
1
R
R
R
7
E
W
/
O
O
/
I
R
3
4
2
1
2
2
2
2
R
R
R
D
3
E
M
E
S
N
1
C
G
A
L
L
L
1
2
1
1
A
A
6
7
5
5
5
5
(4)
(5)
6
5
2
2
R
R
2
1
1
1
A
A
L
L
0
8
9
1
A
A
A
4
3
5
5
9
8
7
2
2
2
R
R
R
9
8
0
1
A
A
A
L
L
L
5
6
7
A
A
A
1
2
5
5
0
3
R
7
A
11/06/01
0
9
5
4
A
A
A
A
A
INT
BUSY
GND
M/S
BUSY
INT
A
A
A
A
A
2739 drw 03
4L
3L
2L
1L
0L
L
L
R
R
0R
1R
2R
3R
4R
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
2
1
33
3
3
R
R
6
5
A
A
2
IDT7006S/L
.
High-Speed 16K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
(1,2,3)
Pin Configurations
(con't.)
11
10
09
08
07
06
05
04
03
02
53
A
55
A
57
A
59
V
61
N/C
63
SEM
65
OE
67
I/O
68
I/O
51 50 48 46 44 42 40 38 36
BUSY
L
7L
52
A
4L
A
2L
A
INT
0L
L
GND
5L
A
49 39 37
A
6L
47 45 43 41 34
A
3L
A
1L
M/SINT
BUSY
R
R
A
0R
54
9L
A
8L
56
11L
A
10L
58
CC
A
12L
60
A
13L
62
L
CE
L
IDT7006G
G68-1
(4)
68-Pin PGA
Top View
(5)
64
L
R/W
L
66
0L
N/C
13579
1L
I/O
2L
I/O
GND GND
4L
I/O
7L
11 13 15
V
1R
CC
I/O
I/O
A
A
1R
2R
4R
A
3R
35
A
4R
32
A
7R
30
A
9R
28
A
11R
26
GND
24
N/C
22
SEM
R
20
R
OE
18 19
I/O
7R
11/06/01
A
5R
33
A
6R
31
A
8R
29
A
10R
27
A
12R
25
A
13R
23
CE
21
R/W
N/C
R
R
01
I/O
3L
I/O
5L
I/O
6L
ABCDEFGH JKL
INDEX
NOTES:
CC pins must be connected to power supply.
1. All V
2. All GND pins must be connected to ground supply.
3. Package body is approximately 1.18 in x 1.18 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking
2 4 6 8 10121416
17
0R
I/O
2R
I/O
V
CC
I/O3RI/O
5R
I/O
6R
2739 drw 04
Pin Names
Left Por t Right Por t Names
CE
R/W
OE
0L
A
0L
I/O
SEM
INT
BUSY
L
L
L
- A
L
- I/O
L
L
13L
CE
R
R/W
R
OE
R
A0R - A
13R
7L
I/O0R - I/O
SEM
INT
BUSY
M/S Master or Slave Select
CC
V
GND Ground
7R
R
R
R
Chip E nable
Re ad /Wri te E nab le
Outp ut Enab l e
Address
Data Inp ut/Outp ut
Semaphore Enable
Inte rrup t Flag
Busy Flag
Power
2739 tbl 01
6.42
3
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
T ruth Table I: Non-Contention R ead/Write Control
(1)
Inputs
CE
R/W
OE SEM
H X X H Hig h -Z Des ele c te d: P o wer -Do wn
LLXHDATA
LHLHDATA
X X H X High-Z Outputs Disabled
NOTE:
1. A
0L – A13L is not equal to A0R – A13R
Outputs
I/O
0-7
OUT
IN
Write to Memory
Read Memo ry
Mode
2739 tbl 02
Truth Table II: Semaphore Read/Write Control
(1)
Inputs
CE
R/W
OE SEM
HHLLDATA
H
↑
XLDATA
LXXL
NOTE:
1. There are eight semaphore flags written to via I/O
Absolute Maximum Ratings
Symbol Rating Commercial
(2)
V
TERM
Ter mi na l Vo l t a g e
with Re sp e c t
to GND
T
BIAS
T emperature
Und e r B ia s
T
STG
Storage
T emperature
I
OUT
DC Output
Current
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
reliability.
TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
2. V
maximum, and is limited to
Capacitance
(1)
Symbol Parameter Conditions
IN
C
OUT
C
Inp u t Ca p ac i ta nc e VIN = 3dV 9 pF
Output
Capacitance
NOTES:
1. These parameters are determined by device characterization, but are not
production tested (TQFP Package Only).
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
& Industrial
-0.5 to +7.0 -0.5 to +7.0 V
-55 to +125 - 65 to +13 5oC
-65 to +150 - 65 to +15 0oC
50 50 mA
< 20mA for the period of VTERM < Vcc + 10%.
(TA = +25°C, f = 1.0mhz)
V
Outputs
I/O
0-7
OUT
Read in Semaphore Flag Data Out
IN
Write I/Oo into Semaphore Flag
____
0 and read from I/O0 - I/O7. These eight semaphores are addressed by A0 - A2.
No t A ll o we d
(1)
Military Unit
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supp ly Vo ltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
V
IL
Input Lo w Voltag e -0 .5
NOTES:
1. V
IL > -1.5V for pulse width less than 10ns.
TERM must not exceed Vcc + 10%.
2. V
2739 tbl 04
Maximum Operating Temperature
and Supply Voltage
Grade
Military -55
Commercial 0
(2)
Max. Unit
OUT
= 3dV 10 p F
2739 tbl 05
Industrial 40
NOTES:
1. This is the parameter T
(1)
Mode
(1)
Ambient
Temperature GND Vcc
O
C to +1 25OC0V 5.0V + 10%
O
C to +70OC0V 5.0V + 10%
O
C to +8 5OC0V 5.0V + 10%
A. This is the "instant on" case temperature.
2739 tbl 03
____
(1)
____
(2)
6.0
0.8 V
2739 tbl 06
V
2739 tbl 07
4
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the 0perating
Temperature and Supply Voltage Range
Symbol Parameter Test Conditions
|I
LI
| Input Leakage Current
|I
LO
| Outp ut Le ak age Cur rent
V
OL
Output Low Voltage IOL = 4mA
V
OH
Output High Voltage IOH = -4mA 2.4
NOTE:
1. At Vcc
< 2.0V input leakages are undefined.
(1)
VCC = 5.5V, VIN = 0V to V
CE = V
IH
, V
OUT
= 0V to V
(VCC = 5.0V ± 10%)
7006S 7006L
CC
CC
___
___
___
0.4
2.4
___
___
___
5µA
5µA
0.4 V
___
2739 t bl 08
10
10
___
Data Retention Characteristics Over All Temperature Ranges
(L Version Only)
Symbol Parameter Test Condition Min. Typ.
V
DR VCC
CCDR Data Rete ntio n Current
I
(3)
CDR
t
(3)
R
t
NOTES:
A = +25°C, VCC = 2V, and are not production tested.
1. T
RC = Read Cycle Time
2. t
3. This parameter is guaranteed by characterization, but is not production tested.
fo r Da ta Re tenti o n V CC = 2
Chip Dese le c t to Data Re tentio n Time SEM > VHC 0
Operation Recovery Time tRC
(VLC = 0.2V, VHC = VCC - 0.2V)
V
VHC
CE >
VIN > VHC or < VLC
Mil. & Ind.
Com'l.
2.0
(1)
Max. Unit
___ ___
___
___
(2)
100 4000
100 1500
___ ___
___ ___
2739 t bl 0 9
UnitMin. Max. Min. Max.
V
V
µA
ns
ns
Data Retention Wa veform
V
CC
CE
4.5V
t
CDR
V
IH
DATA RETENTION MODE
VDR> 2V
V
DR
6.42
5
4.5V
t
R
V
IH
2739 drw 05
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
T emperature and Supply Voltage Range
Symbol Parameter Test Condition Version Typ.
I
CC
Dynamic Op erating
Current
(Both Ports Active)
SB1
Standb y Current
I
(Bo th P o rts - TTL
Leve l Inputs)
I
SB2
Standb y Current
(One Po rt - TTL
Leve l Inputs)
SB3
Full S tand b y Curre nt (B oth
I
Po rts - All CMOS Le v e l
Inputs)
I
SB4
Full Standby Current
(One Po rt - Al l
CMOS Leve l Inp uts)
IL
, Outputs Disabled
CE = V
IH
SEM = V
(3)
f = f
MAX
L
= CER = V
CE
SEMR = SEML = V
f = f
MAX
"A"
CE
Active Po rt Outputs Disable d,
MAX
f=f
SEMR = SEML = V
Both Ports CEL and
R
CE
IN
> VCC - 0.2V o r
V
IN
< 0.2V, f = 0
V
SEMR = SEML > VCC - 0.2V
"A"
CE
"B"
CE
SEMR = SEML > VCC - 0.2V
IN
> VCC - 0.2V o r VIN < 0.2V
V
Active Po rt Outputs Disable d
MAX
f = f
(3)
= VIL and CE
(3)
> VCC - 0. 2V
< 0.2V and
> VCC - 0.2V
(3)
IH
IH
"B"
= V
IH
IH
(4)
(5)
(5)
Symbol Parameter Test Condition Version Typ.
CC
Dynamic Op erating
I
Current
(Both Ports Active)
I
SB1
Standb y Current
(Both Ports - TTL
Leve l Inputs)
I
SB2
Standb y Current
(One P ort - TTL
Leve l Inputs)
I
SB3
Full Standb y Current
(Both Ports - All CMOS
Leve l Inputs)
I
SB4
Full Standb y Current
(One Po rt - A ll CMOS
Leve l Inputs)
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
CC = 5V, TA = +25°C, and are not production tested. ICC DC =120ma (typ)
2. V
3. At f = f
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B"is the opposite from port "A".
MAX, address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels
of GND to 3V.
CE = V
IL
, Outputs Disabled
SEM = V
IH
(3)
f = f
MAX
CE
L
= CER = V
SEMR = SEML = V
f = f
MAX
CE
"A"
Active Port Outputs Disabled,
f=f
MAX
SEMR = SEML = V
Both Ports CE
CE
R
V
IN
> VCC - 0.2V or
V
IN
< 0.2 V, f = 0
SEMR = SEML > VCC - 0.2V
CE
"A"
CE
"B"
SEMR = SEML > VCC - 0.2V
V
IN
> VCC - 0.2V or VIN < 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
= VIL and CE
(3)
L
> VCC - 0.2V
< 0.2V and
> VCC - 0.2V
(3)
IH
and
IH
"B"
= V
IH
IH
(4)
(5)
(5)
COM'L SL170
MIL &
IND
COM'L SL20
MIL &
IND
COM'L SL10595190
MIL &
IND
COM'L SL1.0
MIL &
IND
COM'L SL10090170
MIL &
IND
(1)
(VCC = 5.0V ± 10%)
7006X15
Com'l Only
(2)
Max. Typ.
310
160
260
____
S
L
S
L
____
____
____
60
10
50
____
____
____
____
160
____
S
L
S
L
____
____
____
1551.0
0.2
____
____
____
____
140
____
S
L
____
____
____
COM'L SL150
MIL &
IND
SL150
COM'L SL131060
MIL &
IND
SL131080
COM'L SL8575155
MIL &
IND
S
L
COM'L SL1.0
MIL &
IND
SL1.0
COM'L SL8070135
MIL &
IND
SL8070175
7006X17
Com'l Only
(2)
Max. Typ.
170
310
160
260
____
____
201060
____
____
10595190
1609585
____
____
0.2
____
____
10090170
1409080
____
____
7006X35
Com 'l &
Military
(2)
Max. Typ.
250
140
210
300
140
250
1308575
85
190
75
1608575
0.2
0.2
1108070
1508070
160
150
____
160
____
150
50
____
____
____
____
15
5
____
____
____
____
150
140
150
140
50
65
1551.0
0.2
30101.0
0.23010
7006X20
Com'l, I nd
& Military
(2)
Max. Typ.
201060
201090
9585240
1.0
0.2
1.0
0.23010
9080225
7006X55
Com'l, Ind
& Military
(2)
Max. Typ.
13
10
13
10
290
240
370
320
50
70
180
1509080
2109080
1551.0
155
1308575
2008575
250
210
300
250
60
50
80
65
155
130
190
1608070
15
5
135
110
175
1507565
7006X25
Com' l &
Military
(2)
Max. Unit
155
265
145
220
155
340
145
280
16106050mA
161080
65
170
140
215
180
155mA
0.2
1.0
30
0.2
10
145
120
200
170
2739 t bl 1 0
7006X70
Military
Only
(2)
Max. Unit
____
____
____
____
140
300
130
250
____
____
____
____
10880
65
____
____
____
____
190
160
____
____
____
____
1.0
0.23010
____
____
____
____
175
150
2739 tb l 11
mA
mA
mA
mA
mA
mA
mA
mA
6
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