IS62LV2568L
IS62LV2568LL
IS62LV2568LL
256K x 8 LOW POWER and LOW V++ CMOS STATIC RAM
FEATURES
•Access times of 55, 70, 100 ns
•Low active power: 126 mW (max, L, LL)
•Low standby power: 36 µW (max, L) and 7.2 µW (max, LL) CMOS standby
•Low data retention voltage: 1.5V (min.)
•Available in Low Power (-L) and Ultra-Low Power (-LL)
•Output Enable (OE) and two Chip Enable
•TTL compatible inputs and outputs
•Single 2.7V-3.6V power supply
•Available in the 32-pin 8x20mm TSOP-1, 32-pin 8x13.4mm TSOP-1 and 48-pin 6*8mm TF-BGA
DESCRIPTION
The 1+51 IS62LV2568L and IS62LV2568LL are low power and low VCC, 262,144-bit words by 8 bits CMOS static RAMs. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62LV2568L and IS62LV2568LL are available in 32-pin 8*20mm TSOP-1, 8*13.4mm TSOP-1 and 48-pin 6*8mm TFBGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A17 |
DECODER |
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2048 x 128 x 8 |
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MEMORY ARRAY |
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VCC
GND
I/O
I/O0-I/O7 DATA COLUMN I/O
CIRCUIT
CE1
CE2 CONTROL
OE CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc. |
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SR025_0C
IS62LV2568L
IS62LV2568LL
PIN CONFIGURATIONS
32-Pin 8*20mm TSOP-1, 8*13.4mm STSOP-1 48-Pin 6*8mm TF-BGA
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A11 |
1 |
32 |
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OE |
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A9 |
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2 |
31 |
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A10 |
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A8 |
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3 |
30 |
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CE1 |
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A13 |
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4 |
29 |
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I/O7 |
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I/O6 |
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WE |
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5 |
28 |
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CE2 |
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6 |
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27 |
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I/O5 |
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A15 |
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7 |
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26 |
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I/O4 |
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Vcc |
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8 |
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25 |
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I/O3 |
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A17 |
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9 |
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24 |
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GND |
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A16 |
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10 |
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23 |
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I/O2 |
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A14 |
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22 |
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I/O1 |
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11 |
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A12 |
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21 |
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I/O0 |
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12 |
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A7 |
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13 |
20 |
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A0 |
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A6 |
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14 |
19 |
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A1 |
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A5 |
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15 |
18 |
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A2 |
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A4 |
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16 |
17 |
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A3 |
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1 |
2 |
3 |
4 |
5 |
6 |
A |
A0 |
A1 |
CE2 |
A3 |
A6 |
A8 |
B |
I/O4 |
A2 |
WE |
A4 |
A7 |
I/O0 |
C |
I/O5 |
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NC |
A5 |
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I/O1 |
D |
GND |
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Vcc |
E |
Vcc |
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GND |
F |
I/O6 |
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NC |
A17 |
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I/O2 |
G |
I/O7 |
OE |
CE1 |
A16 |
A15 |
I/O3 |
H |
A9 |
A10 |
A11 |
A12 |
A13 |
A14 |
PIN DESCRIPTIONS
A0-A17 |
Address Inputs |
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CE1 |
Chip Enable 1 Input |
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CE2 |
Chip Enable 2 Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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I/O0-I/O7 |
Data Input/Output |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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OPERATING RANGE
Range |
Ambient Temperature |
VCC |
Commercial |
0°C to +70°C |
2.7V - 3.6V |
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Industrial |
–40°C to +85°C |
2.7V - 3.6V |
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2 |
Integrated Circuit Solution Inc. |
SR025_0C
IS62LV2568L
IS62LV2568LL
TRUTH TABLE
Mode |
WE |
CE1 |
CE2 |
OE |
I/O Operation |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
High-Z |
ISB , ISB |
(Power-down) |
X |
X |
L |
X |
High-Z |
ISB , ISB |
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Output Disabled |
H |
L |
H |
H |
High-Z |
ICC |
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Read |
H |
L |
H |
L |
DOUT |
ICC |
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Write |
L |
L |
H |
X |
DIN |
ICC |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to Vcc + 0.5 |
V |
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VCC |
Vcc related to GND |
–0.3 to +4.0 |
V |
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TBIAS |
Temperature Under Bias |
–40 to +85 |
°C |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
0.7 |
W |
Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
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CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
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COUT |
Output Capacitance |
VOUT = 0V |
8 |
pF |
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Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
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VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1.0 mA |
2.2 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
— |
0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.3 |
V |
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VIL(1) |
Input LOW Voltage(1) |
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–0.3 |
0.4 |
V |
ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
–1 |
1 |
µA |
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ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC |
–1 |
1 |
µA |
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Notes:
1. VIL = –2.0V for pulse width less than 10 ns.
Integrated Circuit Solution Inc. |
3 |
SR025_0C