IS62C1024
IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
•High-speed access time: 35, 45, 55, 70 ns
•Low active power: 450 mW (typical)
•Low standby power: 500 µW (typical) CMOS standby
•Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
•Fully static operation: no clock or refresh required
DESCRIPTION
The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
•TTL compatible inputs and outputs
•Single 5V (±10%) power supply
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62C1024 is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16 |
DECODER |
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512 x 2048 |
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MEMORY ARRAY |
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VCC
GND
I/O
I/O0-I/O7 DATA COLUMN I/O
CIRCUIT
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CE1 |
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CONTROL |
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CE2 |
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CIRCUIT |
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OE |
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WE |
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ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc. |
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SR016-0B |
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IS62C1024
PIN CONFIGURATION |
PIN CONFIGURATION |
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32-Pin SOP and DIP |
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32-Pin 8x20mm TSOP-1 |
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NC |
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1 |
32 |
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VCC |
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A16 |
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2 |
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A15 |
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A11 |
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1 |
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OE |
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A9 |
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2 |
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A10 |
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A14 |
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3 |
30 |
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CE2 |
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A8 |
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30 |
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CE1 |
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A12 |
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29 |
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WE |
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29 |
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I/O7 |
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A13 |
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A7 |
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5 |
28 |
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A13 |
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28 |
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I/O6 |
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A6 |
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6 |
27 |
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A8 |
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WE |
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27 |
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I/O5 |
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A5 |
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7 |
26 |
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A9 |
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CE2 |
6 |
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26 |
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I/O4 |
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A4 |
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A11 |
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A15 |
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VCC |
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I/O3 |
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A3 |
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OE |
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NC |
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GND |
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23 |
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A10 |
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A2 |
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10 |
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A16 |
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I/O2 |
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A1 |
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CE1 |
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A14 |
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I/O1 |
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I/O7 |
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A0 |
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12 |
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A12 |
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I/O0 |
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I/O6 |
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I/O0 |
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A7 |
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A0 |
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I/O1 |
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I/O5 |
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A6 |
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A1 |
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I/O2 |
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I/O4 |
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A5 |
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A2 |
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GND |
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I/O3 |
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A4 |
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A3 |
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PIN DESCRIPTIONS |
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A0-A16 |
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Address Inputs |
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CE1 |
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Chip Enable 1 Input |
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CE2 |
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Chip Enable 2 Input |
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OE |
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Output Enable Input |
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WE |
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Write Enable Input |
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I/O0-I/O7 |
Input/Output |
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Vcc |
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Power |
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GND |
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Ground |
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OPERATING RANGE
Range |
Ambient Temperature |
VCC |
Commercial |
0°C to +70°C |
5V ± 10% |
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Industrial |
–40°C to +85°C |
5V ± 10% |
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TRUTH TABLE
Mode |
WE |
CE1 |
CE2 |
OE |
I/O Operation |
Vcc Current |
Not Selected |
X |
H |
X |
X |
High-Z |
ISB1, ISB2 |
(Power-down) |
X |
X |
L |
X |
High-Z |
ISB1, ISB2 |
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Output Disabled |
H |
L |
H |
H |
High-Z |
ICC |
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Read |
H |
L |
H |
L |
DOUT |
ICC |
Write |
L |
L |
H |
X |
DIN |
ICC |
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2 |
Integrated Circuit Solution Inc. |
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SR016-0B |
IS62C1024
ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to +7.0 |
V |
TBIAS |
Temperature Under Bias |
–10 to +85 |
°C |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.5 |
W |
IOUT |
DC Output Current (LOW) |
20 |
mA |
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Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
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COUT |
Output Capacitance |
VOUT = 0V |
8 |
pF |
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Notes:
1.Tested initially and after any design or process changes that may affect these parameters.
2.Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Unit |
VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1.0 mA |
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2.4 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
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0.4 |
V |
VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.5 |
V |
VIL |
Input LOW Voltage(1) |
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–0.3 |
0.8 |
V |
ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
Com. |
–5 |
5 |
µA |
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Ind. |
–10 |
10 |
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ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC |
Com. |
–5 |
5 |
µA |
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Ind. |
–10 |
10 |
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Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
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-35 ns |
-45 ns |
-55 ns |
-70 ns |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Min. Max. |
Min. |
Max. |
Min. |
Max. |
Unit |
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ICC |
Vcc Dynamic Operating |
VCC = Max., CE = VIL |
Com. |
— |
150 |
— |
135 |
— |
120 |
— |
90 |
mA |
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Supply Current |
IOUT = 0 mA, f = fMAX |
Ind. |
— |
160 |
— |
145 |
— |
130 |
— |
100 |
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ISB1 |
TTL Standby Current |
VCC = Max., |
Com. |
— |
40 |
— |
40 |
— |
40 |
— |
40 |
mA |
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(TTL Inputs) |
VIN = VIH or VIL, CE1 ≥ VIH, |
Ind. |
— |
60 |
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60 |
— |
60 |
— |
60 |
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or CE2 ≤ VIL, f = 0 |
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ISB2 |
CMOS Standby |
VCC = Max., |
Com. |
— |
30 |
— |
30 |
— |
30 |
— |
30 |
mA |
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Current (CMOS Inputs) |
CE1 ≥ VCC – 0.2V, |
Ind. |
— |
40 |
— |
40 |
— |
40 |
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40 |
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CE2 ≤ 0.2V, VIN > VCC – 0.2V, or VIN ≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc. |
3 |
SR016-0B |
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