HP PDT0311-FC-A, PDT0312-FC-A, PDT0411-FC-A, PDT0411-ST-F, PDT0412-FC-A Datasheet

Connectorized PIN Photodiodes

Technical Data

PDT0X1X

Features

• Industry Standard
Connectors–FC, ST® and SC

• 1200 nm to 1650 nm
Wavelength

• High Responsivity

• High Reliability Planar
InGaAs Photodiode

• Range of Flange Options

• Low Dark Current

• -40°C to +85°C Operation

Applications

• Optical Data Communica­tion Receivers

• O-E Convertors

• LANS

• FDDI Networks

• Instrumentation

• FITL

• Single and Multimode Fiber
Communications Systems

Description

The PDT range of products
includes a variety of connector­ized PIN photodiodes designed
for wide operating temperature,
low cost applications such as
fiber in the loop. The planar
InGaAs photodiodes are manu­factured using our MOVPE
growth technology and give low
leakage, high responsivity
performance with excellent
reliability.

The construction of the devices
includes a hermetically sealed
photodiode and is designed to be
compatible with the environ­mental requirements of the
Bellcore TA-TSY-000983
document.

The product range includes a
variety of pinout, connector type

and flange mounting options,
designed to match the majority of
offerings in the marketplace. If
the specific arrangement or
performance you require is not
listed, please contact Hewlett­Packard. Highly flexible design
and manufacturing processes
allow both physical and electro­optic customization to suit your
needs.

ST® is a Registered Trademark of AT&T.

ESD WARNING: NORMAL HANDLING PRECAUTIONS SHOULD BE TAKEN TO AVOID STATIC
DISCHARGE.

504

5965-5857E (11/96)

PDT Connectorized PIN Photodiode Specifications

Absolute Maximum Ratings

Absolute maximum limits mean that no catastrophic damage will occur if the product is subjected to these
ratings for short periods, provided each limiting parameter is in isolation and all other parameters have
values within the performance specification. It should not be assumed that limiting values of more than one
parameter can be applied to the product at the same time.

Parameter Symbol Minimum Maximum Units

Reverse Voltage Vr – 20 V
Reverse Current Ir – 12 mA
Forward Voltage Vf – 1 V
Forward Current If – 5 mA
Power Dissipation – – 50 mW
Operating Temperature Tc -40 85 °C
Storage Temperature Ts -40 85 °C
Soldering–10 seconds – – 260 °C

Performance Specification

Test Conditions:

Unless Otherwise Stated

Parameter Symbol Vr = 5 V, Tc = 25°C Min. Max. Min. Max. Units

Dark Current Id – 1 – 1 nA

Tc = 85°C–50–50nA

Reverse Breakdown Vbr Ir = 10 µA35–35–V
Voltage

Capacitance C 1 MHz – 1.1 – 1.7 pF
Responsivity R λ = 1300 nm 0.7 – 0.7 – A/W
Operating λ 80% points 1200 1650 1200 1650 nm

Wavelength
Rise/Fall Times τr/τf 10% to 90% – 0.25 – 0.5 nS

PDT031X PDT041X

505