HP MSA-9970 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-9970
Features
• Open Loop Feedback
Amplifier
• Performance Flexibility with
User Selected External
Feedback for:
Broadband Minimum
Ripple Amplifiers
Low Return Loss
Amplifiers
Negative Gain Slope
Amplifiers
• Usable Gain to 6.0 GHz
• 16.0 dB Typical Open Loop
Gain at 1.0 GHz
• 14.5 dBm Typical P
1dB
at
1.0␣ GHz
• Hermetic Gold-ceramic
Microstrip Package
The MSA-9970 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic high
reliability package. This MMIC is
designed with high open loop gain
and is intended to be used with
external resistive and reactive
feedback elements to create a
variety of special purpose gain
blocks.
Applications include very broadband, minimum ripple amplifiers
with extended low frequency
performance possible through the
use of a high valued external
feedback blocking capacitor;
extremely well matched (–20 dB
return loss) amplifiers; and
negative gain slope amplifiers for
flattening MMIC cascades.
Typical Biasing Configuration
USER SELECTABLE
C
f
R
f
R
bias
70 mil PackageDescription
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
V
≥ 10 V
CC
MAX
,
RFC (Optional)
C
block
IN
4
3
MSA
1
2
Vd = 7.8 V
C
block
OUT
6-489
5965-9668E
MSA-9970 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65°C to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 6.7 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
750 mW
> 88° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 150°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
Power Gain
[2]
(|S21|2) f = 0.1 GHz dB 17.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 14.5 16.0 17.5
f = 4.0 GHz 8.0 9.0 10.0
P
IP
V
1 dB
3
d
Output Power at 1 dB Gain Compression
Third Order Intercept Point
[2]
Device Voltage V 7.0 7.8 8.6
[2]
f = 1.0 GHz dBm 14.5
f = 1.0 GHz dBm 25.0
dV/dT Device Voltage Temperature Coefficient mV/°C –16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current
is on the following page.
2. Open loop value. Adding external feedback will alter device performance.
6-490
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