HP MSA-3186, MSA-3186-TR1, MSA-3135, MSA-3111, MSA-3185 Datasheet

Silicon Bipolar RFIC Amplifiers

Technical Data

MSA-31XX Series

Features

MSA-3111

• Surface Mount SOT-143
Package

• 3 dB Bandwidth: DC to

0.5 GHz

• 18.4 dB Gain at 1 GHz

• 3.5 dB NF at 1 GHz

MSA-3135

• Hermetic Ceramic Package

• 3 dB Bandwidth: DC to

0.6 GHz

• 19.6 dB Gain at 1 GHz

• 3.2 dB NF at 1 GHz

MSA-3185

• Plastic Microstrip Package

• 3 dB Bandwidth: DC to

0.5 GHz

• 18.7 dB Gain at 1 GHz

• 3.5 dB NF at 1 GHz

MSA-3186

• Surface Mount Plastic
Microstrip Package

• 3 dB Bandwidth: DC to

0.5 GHz

• 18.7 dB Gain at 1 GHz

• 3.5 dB NF at 1 GHz

MSA-3111

MSA-3135

MSA-3185

MSA-3186

Description

The MSA-31XX series are high
performance silicon bipolar RFIC
amplifiers designed to be

cascadable in 50 Ω systems. The

stability factor of K > 1 contrib­utes to easy cascading in
numerous narrow and broadband
IF and RF commercial and
industrial applications.

The MODAMP MSA series is
fabricated using a 10 GHz fT,
25 GHz F
process which utilizes nitride self­alignment, ion implantation, and
gold metallization to achieve
excellent uniformity,
performance, and reliability. The
use of an external bias resistor for
temperature and current stability
also allows bias flexibility.

Package options include, the
industry standard plastic surface
mount SOT-143 package, the
100␣ mil surface mountable
hermetic ceramic package, the
85␣ mil plastic microstripline
package, and the 85 mil surface
mountable plastic microstripline
package.

, silicon bipolar RFIC

MAX

5965-9664E

6-482

Absolute Maximum Ratings

[1]

MSA- MSA- MSA-

Parameter 3111 3135 3185, -3186

Device Current 50 mA 60 mA 60 mA

Power Dissipation

[2,3]

250 mW

[3a]

325 mW

[3b]

325 mW

RF Input Power +13 dBm +13 dBm +13 dBm

Junction Temperature 150°C 200°C 150°C
Storage Temperature -65 to 150°C -65 to 200°C -65 to 150°C

Thermal

Resistance: θ

jc

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

= 25°C.

CASE

3a. Derate at 2.0 mW/°C for TC > 25°C.

b. Derate at 6.5 mW/°C for TC > 149°C.
c. Derate at 8.7 mW/°C for TC > 112°C.

500°C/W 155°C/W 115°C/W

[3c]

Typical Biasing Configuration

DC BLOCK

INPUT

4

3

MSA

1

V = 4.5 V

d

2

R =

RF CHOKE

bias

R

bias

V – V

CC d

I

d

V 7 V

OUTPUT

CC

Electrical Specifications, T

ID = 29 mA, Z

= 50 Ω

o

= 25°C

A

MSA-3111 MSA-3135 MSA-3185, -3186

Parameters and

Symbol Test Conditions Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

G

P

Power Gain

|2)

(|S

21

f = 0. 1 GH z d B 23.5 24.4 23.5 24.5 26.5 23.5 24.6
f = 0. 5 GH z 22.4 22.8 22.3
f = 1. 0 GH z 18.4 19.6 18.7

∆G

P

Gain Flatness

f = 0.1 to 0.3 GHz d B ±0.5 ± 0.4 ± 1.0 ± 0.5

f

3dB

3 dB Bandwidth GHz 0.5 0.6 0.5

VSWR Input VSWR

f = 0.1 to 3.0 GHz 1.2:1 1.2:1 1.2:1

Output VSWR

f = 0.1 to 3.0 GHz 1.2:1 1.2:1 1.4:1

P

1dB

Power Output @
1 dB Gain
Compression:

f = 1.0 GHz dBm 9.0 9.3 9.0

NF 50 Ω Noise

Figure

f = 1.0 GHz dB 3.5 3.2 3.5

IP

3

Third Order
Intercept
Point

f = 1.0 GHz dBm 23 22 21

t

Group Delay

d

f = 1.0 GHz psec 130 130 130

V

D

Device Voltage

T

= 25°C V 4.0 4.5 6.0 4.5 4.7 5.5 4.0 4.7 6.0

C

dV/dT Device Voltage

Temperature Coefficient mV/°C -9.6 -9.6 -9.6

Note: 1. Refer to “Tape and Reel Packaging for Surface Mount Devices.”

6-483

Typical Performance for MSA-3111

z

D

30

25

-55°C

20

-25°C
25°C
85°C

Gp (dB)

15

10

5

0.1 1.0 4.0
FREQUENCY (GHz)

Figure 1. Power Gain vs. Frequency at
Four Temperatures, ID = 29 mA.

30
28
26
24
22
20

Gp (dB)

18
16

14
12

10

20 35

Figure 2. Power Gain vs. Current at

25°C.

0.1 GH

0.5 GHz

1.0 GHz

2.0 GHz

I (mA)

D

14

40 mA

12

35 mA

10

30 mA

8

25 mA

6

1dB

P (dBm)

4

20 mA

2

4025 30

0

0.1
FREQUENCY (GHz)

Figure 3. Typical P

25°C.

1.0 4.0

vs. Frequency at

1dB

5

40 mA

4

NOISE FIGURE (dB)

3

0.1
FREQUENCY (GHz)

20 mA

1.0 4.0

Figure 4. Noise Figure vs. Frequency
at ID = 29 mA.

19

18

GAIN (dB)

17

16

10

1dB

P (dBm)

9

8

-25

Figure 5. Power Gain, Noise Figure,
and P

1dB

ID = 29 mA.

Typical Scattering Parameters at T

ID = 29 mA, Z

Frequency

= 50 Ω

o

S

11

G

P

6

5

4

NF

P

1dB

AMBIENT TEMPERATURE (°C)

3

8525

vs. Temperature at 1 GHz and

= 25°C, for MSA-3111

A

S

21

40

30

20

D

I mA

NOISE FIGURE (dB)

10

0

0

165432

Figure 6. ID vs. VD at Four
Temperatures.

S

12

-55°C

-25°C
25°C

85°C

V (VOLTS)

(GHz) Mag. Ang. (dB) Mag. Ang. (dB) Mag. Ang. Mag. Ang.

0.1 0.05 3 24.4 16.53 167 -27.0 0.045 9 0.10 -23

0.2 0.06 4 24.0 15.83 156 -26.5 0.047 16 0.10 -41

0.3 0.07 -4 23.4 14.78 146 -26.0 0.050 23 0.10 -59

0.4 0.07 -8 22.7 13.59 136 -25.3 0.054 28 0.11 -72

0.5 0.07 -12 22.0 12.53 128 -24.6 0.059 33 0.11 -84

0.6 0.07 -18 21.1 11.41 121 -23.9 0.064 36 0.11 -94

0.7 0.07 -22 20.4 10.47 114 -23.1 0.070 39 0.11 -100

0.8 0.08 -26 19.7 9.63 109 -22.4 0.076 41 0.11 -106

0.9 0.08 -32 19.0 8.89 104 -21.7 0.082 42 0.11 -111

1.0 0.08 -35 18.4 8.27 99 -21.1 0.088 43 0.11 -114

1.5 0.08 -59 15.6 5.99 80 -18.5 0.118 44 0.11 -123

2.0 0.10 -79 13.4 4.69 65 -16.6 0.148 42 0.10 -122

2.5 0.10 -104 11.8 3.88 52 -15.2 0.175 38 0.11 -118

3.0 0.10 -129 10.4 3.31 39 -14.1 0.198 33 0.12 -114

3.5 0.12 -163 9.3 2.91 27 -13.2 0.219 28 0.12 -117

4.0 0.15 164 8.2 2.58 16 -12.6 0.236 23 0.13 -125

4.5 0.21 140 7.4 2.34 4 -12.1 0.250 18 0.13 -136

5.0 0.29 121 6.5 2.10 -7 -11.7 0.260 14 0.14 -148

5.5 0.36 109 5.6 1.90 -18 -11.3 0.271 10 0.17 -158

6.0 0.42 98 4.6 1.70 -28 -11.0 0.282 7 0.21 -165

S

22

6-484