HP MSA-0836-TR1, MSA-0835, MSA-0836-BLK Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0835, -0836
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.0 dB Typical at 1.0␣ GHz
0.5␣ GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial
and industrial applications.
• Low Noise Figure:
3.0␣ dB Typical at 1.0␣ GHz
• Cost Effective Ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Description
The MSA-0835 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block above
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package␣ 36) as MSA-0836.
Typical Biasing Configuration
R
bias
35 micro-X Package
,
MAX
Note:
1. Short leaded 36 package available
upon request.
V
>
10
V
CC
[1]
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
5965-9596E
6-414
MSA-0835, -0836 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 5.7 mW/° C for T
4. Storage above +150° C may tarnish the leads of this package making it
5. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
difficult to solder into a circuit.
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
[4]
750 mW
–65° C to 200°C
> 69° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 175°C/W
[2,5]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 36 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 22.0 23.0 25.0
f = 4.0 GHz 10.5
VSWR
Input VSWR f = 1.0 to 3.0 GHz 2.0:1
Output VSWR f = 1.0 to 3.0 GHz 1.5:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 7.0 7.8 8.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0835 10 Strip
MSA-0836-BLK 100 Antistatic Bag
MSA-0836-TR1 1000 7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-415
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