HP MSA-0520 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0520
Features
• Cascadable 50 Ω Gain Block
• High Output Power:
+23 dBm Typical P
1.0␣ GHz
• Low Distortion:
33 dBm Typical IP3 at 1.0␣ GHz
1 dB
at
BeO disk package for good
thermal characteristics. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• 8.5 dB Typical Gain at
1.0␣ GHz
• Hermetic Metal/Beryllia
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0520 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
200 mil BeO Package
,
MAX
V
> 15 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 12 V
d
C
block
5965-9582E
6-358
MSA-0520 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 225 mA
Power Dissipation
RF Input Power +25 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 40 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
3.0 W
> 125°C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 25°C/W
[2,4]
:
[2]
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
GHz 2.8
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 165 mA, Z
P
1 dB
G
P
∆G
f
3 dB
VSWR
IP
3
NF
50 Ω
t
D
V
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 21.0 23.0
Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5
Gain Flatness f = 0.1 to 2.0 GHz dB ±0.75
P
3 dB Bandwidth
Input VSWR f = 0.1 to 2.0 GHz 2.0:1
Output VSWR f = 0.1 to 2.0 GHz 2.5:1
Third Order Intercept Point f = 1.0 GHz dBm 33.0
50 Ω Noise Figure f = 1.0 GHz dB 6.5
Group Delay f = 1.0 GHz psec 170
Device Voltage V 10.5 12.0 13.5
dV/dT Device Voltage Temperature Coefficient mV/°C –16.0
Notes:
1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (G
).
P
6-359
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