HP MSA-0500-GP4 Datasheet

Cascadable Silicon Bipolar

AK

2

2

1

5

3

4

MMIC␣ Amplifier

Technical Data

MSA-0500

Features

• Cascadable 50 Ω Gain Block

• High Output Power:

+23 dBm Typical P

1.0␣ GHz

• Low Distortion:

33␣ dBm Typical IP3 at 1.0␣ GHz

• 8.5 dB Typical Gain at

1.0␣ GHz

1 dB

at

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f

MAX

,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias

Chip Outline

[1]

flexibility.

Description

The MSA-0500 is a high perfor­mance, medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip.

The recommended assembly
procedure is gold-eutectic die

attach at 400°C and either wedge

or ball bonding using 0.7 mil gold
wire.

This MMIC is designed for use as a

general purpose 50 Ω gain block.

Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military systems.

Typical Biasing Configuration

R

RFC (Optional)

= 12 V

d

bias

C

C

Fbl

C

block

IN OUT

4

3

MSA

1

2

V

This chip is intended to be used
with an external blocking capaci­tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a

(Required)

> 15 V

V

CC

block

45␣ pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.

Note:

1. See Application Note, AN-S009:
“Silicon MMIC Chip Use” for
additional information.

[1]

5965-9579E

6-346

MSA-0500 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 225 mA

(TMS)

[2,3]

= 25°C.

␣>␣140 °C.

MS

than do alternate methods.

jc

3.0 W

Power Dissipation
RF Input Power +25 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

Mounting Surface

3. Derate at 50 mW/° C for T

4. The small spot size of this technique results in a higher, though more

accurate determination of θ

[1]

Thermal Resistance

θjc = 20°C/W

[2,4]

:

Electrical Specifications

[1]

, T

A

= 25° C

Unless otherwise noted, performance is for a MSA-0500 used with an external 45 pF capacitor. See bonding diagram.

Ground

Output
Trace

(backside
contact)

Ground

[2]

: Id = 165 mA, Z

= 50 Ω Units Min. Typ. Max.

O

GHz 2.8

Part Number Ordering Information

Part Number Devices Per Tray

MSA-0500-GP4 100

Symbol Parameters and Test Conditions

P

1 dB

G

P

∆G

f

3 dB

VSWR

IP

3

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 23.0

Power Gain (|S21|2) f = 0.1 GHz dB 9.0

Gain Flatness f = 0.1 to 2.0 GHz dB ±0.75

P

3 dB Bandwidth

3

Input VSWR f = 0.1 to 2.0 GHz 2.0:1

Output VSWR f = 0.1 to 2.0 GHz 2.5:1

Third Order Intercept Point f = 1.0 GHz dBm 33.0

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5

t

D

V

d

Group Delay f = 1.0 GHz psec 125

Device Voltage V 10.5 12.0 13.5

dV/dT Device Voltage Temperature Coefficient mV/°C –16.0

Notes:

1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.
RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.

2.

3. Referenced from 0.1 GHz gain (Gp).

Bonding Diagram

Input Trace

MSA

5

Die

2

1

A05

Capacitor

(45 pF typ)

4

3

Numbers refer to pin contacts listed on the Chip Outline.

6-347