HP MSA-0400-GP4 Datasheet
6-318
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• 16.0␣ dBm Typical P
1 dB
at
1.0␣ GHz
MSA-0400
Chip Outline
[1]
Description
The MSA-0400 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Typical Biasing Configuration
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
C
block
C
block
R
bias
V
CC
> 10 V
V
d
= 6.3 V
RFC (Optional)
IN OUT
MSA
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
“Chip Use”.
5965-9572E
6-319
MSA-0400 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 120 mA
Power Dissipation
[2,3]
850 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Thermal Resistance
[2,4]
:
θjc = 35°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
(TMS)
= 25°C.
3. Derate at 28.6 mW/° C for
T
MS
␣>␣170 °C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
jc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 8.5
∆G
P
Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6
f
3 dB
3 dB Bandwidth GHz 4.3
Input VSWR f = 0.1 to 2.5 GHz 1.7:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
Output Power at 1 dB Gain Compression f = 1.0 GHz, I
d
= 5 0 mA d Bm 12.5
Output Power at 1 dB Gain Compression f = 1.0 GHz, Id = 9 0 mA d Bm 16.0
IP
3
Third Order Intercept Point f = 1.0 GHz dBm 30.0
t
D
Group Delay f = 1.0 GHz psec 140
V
d
Device Voltage V 5.7 6.3 6.9
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
2.
RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Electrical Specifications
[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions
[2]
: Id = 90 mA, Z
O
= 50 Ω Units Min. Typ. Max.
VSWR
P
1 dB
Typical Scattering Parameters
[1]
(Z
O
= 50 Ω, TA = 25° C, I
d
= 50 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .18 179 8.6 2.68 177 –16.4 .151 1 .10 –13 1.37
0.5 .18 –179 8.6 2.68 163 –16.3 .153 7 .16 –54 1.34
1.0 .16 –171 8.5 2.65 145 –15.8 .161 10 .22 –83 1.28
1.5 .16 –161 8.4 2.63 127 –15.4 .169 16 .29 –101 1.19
2.0 .21 –156 8.2 2.56 109 –14.6 .187 18 .33 –119 1.07
2.5 .27 –152 7.8 2.45 98 –13.8 .205 24 .37 –128 0.98
3.0 .33 –159 7.0 2.23 82 –13.4 .213 24 .42 –140 0.91
4.0 .42 –171 5.2 1.81 54 –12.5 .237 21 .42 –151 0.86
5.0 .45 172 3.4 1.49 3 –11.7 .259 17 .38 –153 0.94
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
S
11
S
21
S
12
S
22
Part Number Ordering Information
Part Number Devices Per Tray
MSA-0400-GP4 100
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