HP MSA-0385 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0385
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
1 dB
at
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0385 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
85 Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9570E
6-310
MSA-0385 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 70 mA
Power Dissipation
[2,3]
400 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 9.5 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 108° C.
C
[1]
Thermal Resistance
θjc = 105°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.0 12.0
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.7
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
6-311
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