HP MGA-81563-BLK, MGA-81563-TR1 Datasheet

0.1 – 6 GHz 3 V, 14 dBm Amplifier

Technical Data

MGA-81563

Features

• +14.8 dBm P

+17 dBm P

• Single +3V Supply

• 2.8 dB Noise Figure at

2.0␣ GHz

• 12.4 dB Gain at 2.0 GHz

• Ultra-miniature Package

• Unconditionally Stable

at 2.0 GHz

1dB

at 2.0 GHz

sat

Applications

• Buffer or Driver Amp for
PCS, PHS, ISM, SATCOM
and WLL Applications

• High Dynamic Range LNA

Simplified Schematic

OUTPUT

and V

INPUT

3

GND

1, 2, 4, 5

BIAS

BIAS

6

Surface Mount Package SOT-363 (SC-70)

Description

Hewlett-Packard’s MGA-81563 is
an economical, easy-to-use GaAs
MMIC amplifier that offers
excellent power and low noise
figure for applications from 0.1 to
6 GHz. Packaged in an ultra­miniature SOT-363 package, it
requires half the board space of a
SOT-143 package.

Pin Connections and Package Marking

GND

1

GND

2

INPUT

3

Note: Package marking provides
orientation and identification.

d

81

OUTPUT

6

and V

5

GND

4 GND

The output of the amplifier is
matched to 50 Ω (better than

2.1:1␣ VSWR) across the entire

d

bandwidth. The input is partially
matched to 50 Ω (better than

2.5:1␣ VSWR) below 4 GHz and
fully matched to 50 Ω (better than
2:1 VSWR) above. A simple series
inductor can be added to the input
to improve the input match below
4 GHz. The amplifier allows a
wide dynamic range by offering a

2.7 dB NF coupled with a +27 dBm
Output IP3.

The circuit uses state-of-the-art
PHEMT technology with proven
reliability. On-chip bias circuitry
allows operation from a single
+3␣ V power supply, while resistive
feedback ensures stability (K>1)
over all frequencies and
temperatures.

5965-9684E

6-196

MGA-81563 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

T

V

V

V

P

T

STG

d

gd

in

in

ch

Device Voltage, RF Output V 6.0
to Ground

Device Voltage, Gate V -6.0
to Drain

Range of RF Input Voltage V +0.5 to -1.0
to Ground

CW RF Input Power dBm +13
Channel Temperature °C 165
Storage Temperature °C - 65 to 150

[1]

Thermal Resistance

θ

= 220°C/W

ch-c

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

= 25°C (TC is defined to be the

2. T

C

temperature at the package pins
where contact is made to the
circuit board.)

[2]

:

MGA-81563 Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev

G

NF

NF

test

test

Gain in test circuit
Noise Figure in test circuit
Noise Figure in 50 Ω system f = 0.5 GHz dB 3.1

50

[1]

[1]

= 25° C, ZO = 50 Ω, Vd = 3 V

C

f = 2.0 GHz 10.5 12.4 0.44
f = 2.0 GHz 2.8 3.8 0.21

[2]

f = 1.0 GHz 3.0
f = 2.0 GHz 2.7 0.21
f = 3.0 GHz 2.7
f = 4.0 GHz 2.8
f = 6.0 GHz 3.5

2

|

|S

21

Gain in 50 Ω system f = 0.5 GHz dB 12.5

f = 1.0 GHz 12.5
f = 2.0 GHz 12.3 0.44
f = 3.0 GHz 11.8
f = 4.0 GHz 11.4
f = 6.0 GHz 10.2

P

1 dB

Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 15.1

f = 1.0 GHz 14.8
f = 2.0 GHz 14.8 0.86
f = 3.0 GHz 14.8
f = 4.0 GHz 14.8
f = 6.0 GHz 14.7

IP

VSWR

VSWR

I

Notes:

1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.

2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.

Output Third Order Intercept Point f = 2.0 GHz dBm +27 1.0

3

Input VSWR f = 2.0 GHz 2.7:1

in

Output VSWR f = 2.0 GHz 2.0:1

out

Device Current mA 31 42 51

d

6-197

MGA-81563 Typical Performance, T

= 25° C, V

C

= 3 V

d

16
14

12
10

(dB)

8

GAIN

6
4

TA = +85°C

= +25°C

T

A

2

= –40°C

T

A

0

034512 6 0 34512 6

FREQUENCY (GHz) FREQUENCY (GHz)

Figure 1. 50 Ω Power Gain vs.
Frequency and Temperature.

16
14

12
10

(dB)

8

GAIN

6

Vd = 3.3V

4

= 3.0V

V

d

2

= 2.7V

V

d

0

034512 6

FREQUENCY (GHz)

Figure 4. 50 Ω Power Gain vs.
Frequency and Voltage.

5

4

(dB)

3

2

NOISE FIGURE

TA = +85°C

1

= +25°C

T

A

= –40°C

T

A

0

Figure 2. Noise Figure (into 50 Ω)
vs. Frequency and Temperature.

5

4

(dB)

3

2

Vd = 3.3V

NOISE FIGURE

1

= 3.0V

V

d

= 2.7V

V

d

0

034512 6

FREQUENCY (GHz)

Figure 5. Noise Figure (into 50 Ω) vs.
Frequency and Voltage.

16

15

14

(dBm)

1 dB

13

P

TA = +85°C

12

11

= +25°C

T

A

= –40°C

T

A

034512 6

FREQUENCY (GHz)

Figure 3. Output Power @ 1 dB Gain
Compression vs. Frequency and
Temperature.

16

15

14

(dBm)

1 dB

13

P

Vd = 3.3V

12

= 3.0V

V

d

= 2.7V

V

d

11

034512 6

FREQUENCY (GHz)

Figure 6. Output Power @ 1 dB Gain
Compression) vs. Frequency and
Voltage.

4

3.5
Input

3

2.5

Output

VSWR (n:1)

2

1.5

1

034512 6

FREQUENCY (GHz)

Figure 7. Input and Output VSWR
into 50 Ω vs. Frequency.

60

50

(mA)

40

30

20

DEVICE CURRENT

10

0

034512

TA = +85°C

= +25°C

T

A

= -40°C

T

A

DEVICE VOLTAGE (V)

Figure 8. Device Current vs. Voltage
and Temperature.

6-198

16
14

12

(dB)

10

GAIN and NF

Gain

8
6
4

2
0

NF

034512 6

FREQUENCY (GHz)

Figure 9. Minimum Noise Figure and
Associated Gain vs. Frequency.

MGA-81563 Typical Scattering Parameters

Freq.
GHz

S

11

Mag Ang dB Mag Ang dB Mag Ang Mag Ang

S

21

[1]

, T

= 25° C, ZO = 50 Ω, Vd = 3 V

C

S

12

S

22

0.1 0.57 -16 13.02 4.48 172 -25 0.051 312 0.43 -14 1.47

0.2 0.52 -13 12.58 4.258 171 -25 0.057 17 0.38 -13 1.58

0.5 0.49 -16 12.35 4.15 164 -25 0.059 8 0.35 -9 1.64

1.0 0.48 -28 12.18 4.06 152 -25 0.061 5 0.35 -15 1.65

1.5 0.47 -40 12.00 3.98 140 -25 0.063 5 0.34 -22 1.65

2.0 0.45 -52 11.82 3.90 128 -24 0.067 4 0.34 -30 1.65

2.5 0.43 -63 11.63 3.81 116 -24 0.070 2 0.32 -39 1.66

3.0 0.39 -75 11.37 3.70 104 -24 0.074 -1 0.31 -46 1.69

3.5 0.35 -87 11.11 3.59 93 -22 0.077 -4 0.29 -53 1.73

4.0 0.32 -100 10.85 3.49 81 -22 0.081 -7 0.27 -60 1.77

4.5 0.28 -114 10.58 3.38 70 -22 0.083 -11 0.25 -67 1.82

5.0 0.25 -130 10.30 3.27 59 -21 0.087 -15 0.23 -74 1.85

5.5 0.22 -146 10.02 3.17 49 -21 0.09 -20 0.21 -81 1.91

6.0 0.20 -166 9.75 3.07 38 -21 0.091 -25 0.19 -90 1.93

6.5 0.18 174 9.46 2.97 27 -21 0.093 -30 0.17 -96 1.98

7.0 0.17 150 9.12 2.86 16 -21 0.094 -36 0.14 -100 2.05

K

Factor

MGA-81563 Typical Noise Parameters

[1]

TC = 25° C, ZO = 50 Ω, Vd = 3 V

Frequency NF

O

Γ

opt

GHz dB Mag. Ang. —

0.5 2.90 0.16 1 1.57

1.0 2.80 0.15 17 0.96

1.5 2.70 0.14 28 0.75

2.0 2.69 0.14 37 0.41

2.5 2.68 0.13 44 0.39

3.0 2.68 0.11 50 0.38

3.5 2.68 0.09 56 0.36

4.0 2.69 0.06 65 0.34

4.5 2.69 0.03 76 0.33

5.0 2.68 0.01 137 0.32

5.5 2.67 0.02 -135 0.32

6.0 2.67 0.05 -109 0.32

6.5 2.71 0.07 -95 0.33

7.0 2.77 0.09 -78 0.36

Note:

1. Reference plane per Figure 11 in Applications Information section.

R

/ 50 Ω

n

6-199