HP MGA-64135 Datasheet
2 – 6 GHz Cascadable GaAs
MMIC␣ Amplifier
Technical Data
MGA-64135
Features
• Cascadable 50 Ω Gain Block
• Broadband Performance:
2 –6␣ GHz
12.0 dB Typical Gain
± 0.8 dB Gain Flatness
12.0 dBm P
1 dB
• Single Supply Bias
• Cost Effective Ceramic
Microstrip Package
Description
The MGA-64135 is a high performance gallium arsenide Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This device is
designed for use as a general
purpose 50 ohm gain block in the 2
to 6␣ GHz frequency range. Typical
applications include narrow and
broadband IF and RF amplifiers
for commercial, industrial, and
military requirements.
This MMIC is a cascade of two
stages, each utilizing shunt
feedback to establish a broadband
impedance match. The source of
each stage is AC grounded to
allow biasing from a single
positive power supply. The
interstage blocking capacitor as
well as a resistive “self-bias”
network are included on chip.
The die is fabricated using HP’s
nominal .5 micron recessed
Schottky-barrier-gate, gold
metallization and silicon nitride
passivation to achieve excellent
performance, uniformity, and
reliability.
35 Micro-X Package
Typical Biasing Configuration
V
d
RFC
IN
5965-9005E
4
3
MGA
1
2
C
block
OUT
6-192
MGA-64135 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
d
P
diss
P
in
T
ch
T
STG
Device Voltage V 12
Total Power Dissipation
[2]
mW 650
CW RF Input Power dBm +13
Channel Temperature °C 175
Storage Temperature
[3]
°C -65 to 175
[1]
Thermal Resistance: θjc = 150°C/W
Liquid Crystal Measurement: 1 µ m Spot Size
[4]
; T
[5]
= 150°C
CH
Notes:
1. Operation of this device above any one of these parameters may cause
permanent damage.
2. Derate linearly at 8.3 mW/° C for
> 103°C.
T
CASE
3. Storage above +150° C may tarnish the leads of this package making it
difficult to solder into a circuit. After a device has been soldered into a
circuit, it may be safely stored up to 175°C.
4. The thermal resistance value is based on measurements taken with the
device soldered to a 25 mil Teflon PCB.
5. The small spot size of this technique results in a higher, though more
accurate determination of θ
than do alternate methods. See MEASURE-
jc
MENTS section for more information.
MGA-64135 Electrical Specifications, T
Symbol Parameters and Test Conditions: Vd = 10 V, Z
G
P
∆G
—
VSWR
P
1 dB
Power Gain (|S21|2) f = 2 to 6 G Hz dB 10.0 12.0
Gain Flatness f = 2 to 6 GHz dB ± 1.20
P
Gain Variation vs. Temperature f = 2 to 6 GHz dB ±0.5
T
= –25°C to +85° C
CASE
Input VSWR f = 2 to 6 GHz 1.5:1 2.0:1
Output VSWR f = 2 to 6 GHz 1.4:1 2.0:1
Output Power at 1 dB Gain Compression f = 2 to 6 GHz dBm 10.0 12.0
= 25° C
A
= 50 Ω Units Min. Typ. Max.
O
NF 50 Ω Noise Figure f = 2 to 6 GHz dB 7.5
— Reverse Isolation (|S21|2) f = 2 to 6 GHz dB 35
I
d
Device Current mA 35 50 65
6-193
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