Silicon Bipolar MMIC 1.5 GHz
Variable Gain Amplifier
Technical Data
IVA-05208
Features
• Differential Input and
Output Capability
• DC to 1.5 GHz Bandwidth;
2.0 Gb/s Data Rates
• High Gain: 30 dB Typical
• Wide Gain Control Range:
30␣ dB Typical
• 5 V Bias
• 5 V Vgc Control Voltage,
Igc␣<␣3 mA
• Fast Gain Control Response:
< 10 ns Typical
• Low Cost Plastic Surface
Mount Package
Description
The IVA-05208 is a variable gain
amplifier housed in a miniature
low cost plastic surface mount
package. This device can be used
in any combination of singleended or differential inputs or
outputs (see Functional Block
Diagram). The lowest frequency
of operation is limited only by the
values of user selected blocking
and bypass capacitors.
Typical applications include
variable gain amplification for
fiber optic systems (e.g., SONET)
with data rates up to 2.0 Gb/s,
mobile radio and satellite
receivers, millimeter wave
receiver IF amplifiers and
communication receivers.
SO-8 Package
The IVA series of variable gain
amplifiers is fabricated using HP’s
10 GHz fT, 25 GHz f
ISOSAT™-I silicon bipolar
process. This process uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide inter-metal
dielectric and scratch protection
to achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration and Functional Block Diagram
PIN 1
MAX
Differential Input / Differential Output
C
bypass
8
V
7
C
block
6
C
block
5
C
bypass
Input
V
Input
C
block
1
2
= 0 V
ee
C
block
3
4
C
= 1000 pF typical
bypass
Good grounding of Pins 2, 3 is critical for proper
operation and good VSWR performance of this part.
gc
V
CC
Output –
Output +
= 5 V
Single Ended Input / Single Ended Output
C
block
bypass
1
2
3
4
or 50 Ω)
block
Input
V
= 0 V
ee
C
* Optional: For Single-Ended Output operation, Pin 7
may be left unterminated (no C
6-177
C
bypass
8
7
C
block
6
C
block
5
C
bypass
5965-9682E
V
gc
V
Output +
= 5 V
CC
50 Ω*
IVA-05208 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
VCC-V
Vgc-V
T
J
T
STG
Device Voltage V 8
ee
Power Dissipation
[2,3]
m W 600
Input Power dBm +14
ee
V7
Junction Temperature °C 150
Storage Temperature °C -65 to 150
[1]
Thermal Resistance
[2]
:
θjc = 150°C/W
Notes:
1. Permanent damage may occur is any of
these limits are exceeded.
2. T
= 25°C.
CASE
3. Derate at 6.67 mW/°C for TC > 60°C.
= 0 V, Z
gc
[1]
, T
= 25° C
A
= 50 Ω
O
[2]
Units Min. Typ. Max.
IVA-05208 Electrical Specifications
Symbol Parameters and Test Conditions:
V
= 5 V, V
CC
= 0 V, V
ee
Gp Power Gain (|S21|2) f = 0.5 GHz dB 25 30
∆Gp Gain Flatness f = 0.05 to 1.0 GHz dB ± 0.8
f
3dB
3 dB Bandwidth
GCR Gain Control Range
[3]
[4]
G Hz 1.2 1.8
f = 0.5 GHz dB 25 30
V
= 0 to 5 V
gc
ISO Reverse Isolation (|S21|2) f = 0.5 GHz dB 45
V
= 0 to 5 V
gc
Input VSWR f = 0.05 to 1.5 GHz 2.0:1
VSWR V
= 0 to 5 V
gc
Output VSWR f = 0.05 to 1.5 GHz 2.5:1
V
= 0 to 5 V
gc
NF 50 Ω Noise Figure f = 0.5 GHz dB 9
P
1dB
Output Power at 1 dB Gain f = 0.5 GHz dBm -3
Compression
V
OUT
Peak-to-Peak Single-Ended f = 0.5 GHz mVpp 450
Output Voltage
IP
3
t
D
I
CC
Notes:
1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following
page.
2. As measured using Input Pin 1 and Output Pin 6, with Output Pin 7 terminated into 50 ohms and Input Pin 4 at AC ground.
3. Referenced from 50 MHz Gain.
4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2V
may result in gain increase rather than gain decrease.
Output Third Order Intercept Point f = 0.5 GHz dBm 7
Group Delay f = 0.5 GHz psec 400
Supply Current mA 25 35 50
6-178