HP IAM-81028 Datasheet
Silicon Bipolar MMIC 5 GHz
Active Double Balanced
Mixer/IF Amp
Technical Data
IAM-81028
Features
• 8 dB RF-IF Conversion Gain
From 0.05 - 5 GHz
• IF Output from DC to 1 GHz
• Low Power Dissipation:
60 mW at V
• Single Polarity Bias Supply:
V
= 4 to 8 V
CC
•
Load-Insensitive Performance
• Conversion Gain Flat Over
Temperature
•
Low LO Power Requirements:
-5 dBm Typical
• Low RF to IF Feedthrough,
Low LO Leakage
• Hermetic Ceramic Surface
Mount Package
= 5 V Typ.
CC
Description
The IAM-81028 is a complete lowpower-consumption doublebalanced active mixer housed in a
miniature ceramic hermetic
surface mount package. It is
designed for narrow or wide
bandwidth commercial, industrial
and military applications having
RF inputs up to 5 GHz and IF
outputs from DC to 1 GHz.
Operation at RF and LO
frequencies less than 50 MHz can
be achieved using optional
external capacitors to ground.
The IAM-81028 is particularly well
suited for applications that
require load-insensitive conversion gain and good spurious signal
suppression with minimum LO
and bias power consumption.
Typical applications include
frequency down conversion,
Typical Biasing Configuration and
Functional␣ Block␣ Diagram
28 Package
PIN 1
modulation, demodulation and
phase detection for fiber-optic,
GPS satellite navigation, mobile
radio, and battery powered
communications receivers.
The IAM series of Gilbert
multiplier-based frequency
converters is fabricated using
HP’s 10 GHz, fT, 25 GHz f
ISOSATTM-I silicon bipolar process. This process uses nitride self
alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide inter-metal
dielectric and scratch protection
to achieve excellent performance,
uniformity and reliability.
MAX
7-123
5965-9108E
Absolute Maximum Ratings
Absolute
Parameter Maximum
Device Voltage 15 V
Power Dissipation
RF Input Power +14 dBm
LO Input Power +14 dBm
Junction Temperature 200°C
Storage Temperature -65°C to 200°C
[2,3]
300 mW
[1]
Thermal Resistance:
[2,4]
θjc = 50°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. T
= 25°C.
CASE
3. Derate at 20 mW/°C for TC > 185°C.
4. See MEASUREMENTS section “Thermal
Resistance” in Communications
Components Catalog, for more
information.
Electrical Specifications
T
= 25°C
A
[1]
Parameters and Test Conditions:
Symbol VCC = 5 V, Z
G
C
f
RF RF Bandwidth IF = 250 MHz GHz 4.5
3dB
Conversion Gain RF = 2 GHz, LO = 1.75 GHz dB 7.0 8.5 10
= 50 Ω , LO = -5 dBm, RF = -20 dBm Units Min. Typ. Max.
O
(GC 3 dB Down)
f
IF IF Bandwidth LO = 2 GHz GHz 0.6
3dB
(GC 3 dB Down)
P
1dB
IF Output Power at RF = 2 GHz, LO = 1.75 GHz dBm -6
1 dB Gain Compression
IP
3
IF Output Third Order RF = 2 GHz, LO = 1.75 GHz dBm 3
Intercept Point
NF SSB Noise Figure RF = 2 GHz, LO = 1.75 GHz dB 17
VSWR RF Port VSWR f = 0.05 to 5 GHz 1.5:1
LO Port VSWR f = 0.05 to 5 GHz 1.5:1
IF Port VSWR f < 1 GHz 1.5:1
RF
LO
LO
I
CC
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following
page.
RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz dBc -25
if
LO Leakage at IF Port LO = 1.75 GHz dBm -25
if
LO Leakage at RF Port LO = 1.75 GHz dBm -35
rf
Supply Current mA 10 12.5 16
7-124
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