HP IAM-81008-TR1 Datasheet

Silicon Bipolar MMIC 5␣ GHz
POWER CONTROL
RF
IN
V
CC1
GROUND AND THERMAL CONTACT
GROUND AND THERMAL CONTACT
18
27
RF
OUT
AND V
CC2
GROUND 3 6
45
Active Double Balanced Mixer/IF␣ Amp
Technical Data
IAM-81008

Features

• RF-IF Conversion Gain From 0.05– 5 GHz
• Low Power Dissipation:
65␣ mW at VCC = 5 V Typical
• Single Polarity Bias Supply:
VCC = 4 to 8 V
Load-insensitive Performance
• Conversion Gain Flat Over Temperature
Low LO Power Requirements:
–5␣ dBm Typical
• Low Cost Plastic Surface Mount Package

Description

The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commer­cial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applica­tions that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption.
Typical applications include

Plastic SO-8 Package

frequency down conversion, modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation, mobile radio, and battery powered communications receivers.
The IAM series of Gilbert multiplier­based frequency converters is fabricated using HP’s 10␣ GHz, f 25␣ GHz f
ISOSAT™-I silicon
MAX
,
T

Pin Configuration

bipolar process. This process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter­metal dielectric and scratch protec­tion to achieve excellent perfor­mance, uniformity and reliability.

Typical Biasing Configuration and Functional Block Diagram

C
C
block
C
1
2
3
4
block
IF Output
= 0 V
V
ee
RF Input
Note: No external baluns are required.
7-119
8
7
6
5
C
block
block
Optional Low Frequencies RF Ground
V
= 5 V
CC
Optional Low LO Ground
LO Input
5965-9107E

IAM-81008 Absolute Maximum Ratings

Parameter Absolute Maximum
Device Voltage 10 V Power Dissipation
2,3
300 mW RF Input Power +14 dBm LO Input Power +14 dBm
Junction Temperature 150°C Storage Temperature –65 to 150° C
[1]

IAM-81008 Part Number Ordering Information

Part Number Devices Per Reel Reel Size
IAM-81008-TR1 1000 7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
Thermal Resistance:
θjc = 80°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 82° C.
C
2. T
3. Derate at 4.4 mW/° C for T
IAM-81008 Electrical Specifications
Symbol Parameters and Test Conditions: Vcc = 5 V, Z
G
F
F
P
IP
C
3 dB
3 dB
1 dB
3
Conversion Gain RF = 2 GHz, LO = 1.75 GHz dB 6.0 8.5 10
RF RF Bandwidth (GC 3 dB Down) IF = 250 MHz GHz 3.5
IF IF Bandwidth (GC 3 dB Down) LO = 2 GHz GHz 0.6
IF Output Power at 1 dB Gain Compression RF = 2 GHz, LO = 1.75 GHz dBm –6
IF Output Third Order Intercept Point RF = 2 GHz, LO = 1.75 GHz dBm 3
[1]
, T
= 25° C
A
= 50 , LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max.
O
NF SSB Noise Figure RF = 2 GHz, LO = 1.75 GHz dB 17
RF Port VSWR f = 0.05 to 3.5 GHz 1.5:1
VSWR LO Port VSWR f = 0.05 to 3.5 GHz 2.0:1
IF Port VSWR f < 1 GHz 1.5:1
RF
LO
LO
I
CC
RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz d Bc –25
if
LO Leakage at IF Port LO = 1.75 GHz dBm –25
if
LO Leakage at RF Port LO = 1.75 GHz dBm –30
rf
Supply Current mA 10 13 16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following page.
7-120
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