6-41
HMMC-5025 DC Specifications/Physical Properties
[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
DSS
Saturated Drain Current mA 130 150 170
(VDD = 5.0 V, VG1 = 0.0 V, VG2 = open circuit)
V
p
First Gate Pinch-off Voltage V -1.7 -0.5
(VDD = 5.0 V, IDD = 15 mA, VG2 = open circuit)
V
G2
Second Gate Self-Bias Voltage V 2
(VDD = 5.0 V, IDD = 75 mA)
I
DSOFF(VG1
) First Gate Pinch-off Current mA 6 10
(VDD = 5.0 V, VG1 = -3.5 V, VG2 = open circuit)
I
DSOFF(VG2
) Second Gate Pinch-off Current mA 10
(VDD = 5.0 V, IDD = 75 mA, VG2 = -3.5 V)
θ
ch-bs
Thermal Resistance (T
backside
= 25° C) °C/W 63
Note:
1. Measured in wafer form with T
chuck
= 25°C. (Except θ
ch-bs
.)
HMMC-5025 RF Specifications
[1]
, V
DD
= 5.0 V, IDD(Q) = 75 mA, Zin = Z
o
= 50 Ω
Symbol Parameters and Test Conditions Units Min. Typ. Max.
BW Guaranteed Bandwidth
[2]
GHz 2 50
S
21
Small Signal Gain dB 7.0 8.5
∆ S
21
Small Signal Gain Flatness dB ±0.75 ± 1.5
RL
in
Input Return Loss dB 10 15
RL
out
Output Return Loss dB 10 15
S
12
Reverse Isolation dB 20 30
P
-1dB
Output Power @ 1dB Gain Compression @ 40 GHz dBm 12
P
sat
Saturated Output Power @ 40 GHz dBm 16
H
2
Second Harmonic Power Level (2 < ƒo < 26) dBc -35
Po(ƒo) = 10 dBm
H
3
Third Harmonic Power Level (2 < ƒo < 20) dBc -25
Po(ƒo) = 10 dBm
NF Noise Figure (2 – 35 GHz) dB 5.0
Noise Figure (35 – 50 GHz) 7.0
Notes:
1. Small-signal data measured in wafer form with T
chuck
= 25°C. Harmonic data measured on individual devices mounted
in a microcircuit package at T
A
= 25° C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.