HP HBCS-1100 Datasheet

High Resolution Optical Reflective Sensor

Technical Data

HBCS-1100

Features

• Focused Emitter and Detector in a Single Package

• High Resolution–0.190 mm Spot Size

• 700 nm Visible Emitter

• Lens Filtered to Reject Ambient Light

• TO-5 Miniature Sealed Package

• Photodiode and Transistor Output

• Solid State Reliability

Description

The HBCS-1100 is a fully integrated module designed for optical reflective sensing. The module contains a 0.178 mm (0.007 in.) diameter 700 nm visible LED emitter and a

Package Dimensions

MAXIMUM

SIGNAL POINT

REFERENCE

5.08

(0.200)

PLANE

(0.168 ± 0.010)

4.27 ± 0.25

matched I.C. photodetector. A bifurcated aspheric lens is used to image the active areas of the emitter and the detector to a single spot 4.27 mm (0.168 in.) in front of the package. The reflected signal can be sensed directly from the photodiode or through an internal transistor that can be configured as a high gain amplifier.

Applications

Applications include pattern recognition and verification, object sizing, optical limit switching, tachometry, textile thread counting and defect detection, dimensional monitoring, line locating, mark, and bar code scanning, and paper edge detection.

9.40 (0.370)

8.51 (0.335)

0.86 (0.034)

0.73 (0.029)

4.11

(0.162)

1.14 (0.045)

0.73 (0.029)

5.08

(0.200)

Mechanical Considerations

The HBCS-1100 is packaged in a high profile 8 pin TO-5 metal can with a glass window. The emitter and photodetector chips are mounted on the header at the base of the package. Positioned above these active elements is a bifurcated aspheric acrylic lens that focuses them to the same point.

R.P.

8.33 (0.328)

7.79 (0.307)

11.50 (0.453)

11.22 (0.442)

15.24 (0.600)

12.70 (0.500)

S.P.

12.0

(0.473)

5965-5944E

NOTES:

1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES).

2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.

3. THE REFERENCE PLANE IS THE TOP SURFACE OF THE PACKAGE.

4. NICKEL CAN AND GOLD PLATED LEADS.

5. S.P. SEATING PLANE.

6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.

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The sensor can be rigidly secured by commercially available two piece TO-5 style heat sinks, such as Thermalloy 2205, or Aavid Engineering 3215. These fixtures provide a stable reference platform and their tapped mounting holes allow for ease of affixing this assembly to the circuit board.

Electrical Operation

The detector section of the sensor can be connected as a single photodiode or as a photodiode transistor amplifier. When photodiode operation is desired, it is recommended that the substrate diodes be defeated by connecting the collector of the

transistor to the positive potential of the power supply and shorting the base-emitter junction of the transistor. Figure 15 shows photocurrent being supplied from the anode of the photodiode to an inverting input of the operational amplifier. The circuit is recommended to improve the reflected photocurrent to stray photocurrent ratio by keeping the substrate diodes from acting as photodiodes.

The cathode of the 700 nm emitter is physically and electrically connected to the casesubstrate of the device. Applications that require modulation or

switching of the LED should be designed to have the cathode connected to the electrical ground of the system. This insures minimum capacitive coupling of the switching transients through the substrate diodes to the detector amplifier section.

The HBCS-1100 detector also includes an NPN transistor which can be used to increase the output current of the sensor. A current feedback amplifier as shown in Figure 6 provides moderate current gain and bias point stability.

Schematic Diagram

REFLECTOR

REFERENCE

PLANE

ANODE

CATHODE

SUBSTRATE, CASE

– SUBSTRATE DIODES

Connection Diagram

PIN FUNCTION

TRANSISTOR COLLECTOR

1

TRANSISTOR BASE, PHOTODIODE ANODE

2

PHOTODIODE CATHODE

3

LED CATHODE, SUBSTRATE, CASE

4

NC

5

LED ANODE

6

NC

7

TRANSISTOR EMITTER

TOP VIEW

CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be introduced by ESD.

4-16

Absolute Maximum Ratings at T

= 25°C

Parameter Symbol Min. Max. Units Fig. Notes

Storage Temperature T Operating Temperature T

-40 +75 °C

-20 +70 °C

Lead Soldering Temperature 260 for 10 sec. °C11

1.6 mm from Seating Plane Average LED Forward Current I Peak LED Forward Current I Reverse LED Input Voltage V Package Power Dissipation P Collector Output Current I

FPK

R P

Supply and Output Voltage VD, VC, V Transistor Base Current I Transistor Emitter Base Voltage V

-0.5 20 V 10

50 mA 2 75 mA 1 1

120 mW 3

8mA

5mA

0.5 V

System Electrical/Optical Characteristics at T

= 25°C

Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note

Total Photocurrent I

(IPR + IPS)

150 250 375 TA = 25°C

575 nA TA = 20°CIF = 35 mA, 2, 3 4

VD = VC = 5 V

80 TA = 70°C

Reflected Photocurrent I (IPR) to Internal Stray I

PR PS

4 8.5 IF = 35 mA, 3

VC = VD = 5 V

Photocurrent (IPS) Transistor DC Static h

Slew Rate 0.08 V/µsRL = 100 K, I

50 TA = 20° CVCE = 5 V, 4, 5

100 200 TA = 25°C

IC = 10 µACurrent Transfer Ratio

= 50 mA, 6

RF = 10 M, tON = 100 µs, Rate = 1 kHz

Image Diameter d 0.17 mm IF = 35 mA, 8, 10 8, 9

= 4.27 mm (0.168 in.)

Maximum Signal Point 4.01 4.27 4.52 mm Measured from Reference 9

Plane

50% Modulation MTF 2.5 I

npr/mmIF

= 35 mA, 10, 5, 7

Transfer Function =4.27 mm 11 Depth of Focus ∆ 1.2 mm 50% of IP at = 4.27 mm 9 5

FWHM

Effective Numerical N.A. 0.3 Aperture

Image Location D 0.51 mm Diameter Reference to 6

Centerline

= 4.27 mm

Thermal Resistance Θ

85 °C/W

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