HP ATF-46101 Datasheet

2 – 10 GHz Medium Power
Gallium Arsenide FET

Technical Data

ATF-46101

Features

• High Output Power:

27.0␣ dBm Typical P

• High Gain at 1 dB
Compression:

12.0␣ dB Typical G

• High Power Efficiency:

1 dB

at 4␣ GHz

1 dB

at 4␣ GHz

gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 1.25␣ millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.

38% Typical at 4␣ GHz

This device is suitable for applica-

Description

The ATF-46101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica­tion in the 2 to 10 GHz frequency
range. This nominally 0.5␣ micron

Electrical Specifications, T

Symbol Parameters and Test Conditions

P

1 dB

Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 25.0 27.0

tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.

= 25° C

A

[1]

VDS = 9 V, IDS = 125 mA f = 8.0 GHz 26.5

G

1 dB

1 dB Compressed Gain: VDS = 9 V, IDS = 125 mA f = 4.0 GHz dB 9.0 10.0

f = 8.0 GHz 5.0

η

add

g

m

I

DSS

V

P

Note:

1. RF Performance is determined by packaging and testing 10 samples per wafer.

Efficiency @ P

1dB

: V

= 9 V, I

DS

= 125 mA f = 4.0 GHz % 38

DS

Transconductance: VDS = 2.5 V, IDS = 125 mA mmho 100

Saturated Drain Current: VDS = 2.5 V, VGS = 0 V m A 200 330 450

Pinch-off Voltage: VDS = 2.5 V, IDS = 5 mA V -5.4 -3.5 -2.0

100 mil Flange Package

Units Min. Typ. Max.

5965-8731E

5-98

ATF-46101 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Thermal Resistance: θjc = 75°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

Drain-Source Voltage V +14
Gate-Source Voltage V -7
Gate-Drain Voltage V -16

Drain Current mA I
Power Dissipation

[2,3]

W 2.0

Channel Temperature °C 175
Storage Temperature °C -65 to +175

= 150°C

CH

[4]

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

MOUNTING SURFACE

= 25° C.

3. Derate at 13 mW/° C for

> 25°C.

T

CASE

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-46101 Typical Performance, T

28

P

27

(dBm)

26

1 dB

P

25

24

2.0 6.04.0 8.0 10.0 12.0

1 dB

G

1 dB

FREQUENCY (GHz)

Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 125 mA.

20

15

10

5

0

30

25

20

15

(dBm)

(dBm)

OUT

1 dB

P

G

10

5

0

0 5 10 15

Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 125 mA, f = 4.0 GHz.

= 25° C

A

PIN (dBm)

20 25

25

20

40

30

20

10

0

15

10

GAIN (dB)

(%)

add

5

η

0

1.0 2.0 4.0 6.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 125 mA.

MAG

MAG

14.010.0

5-99