HP ATF-45101 Datasheet

2 – 8 GHz Medium Power
Gallium Arsenide FET

Technical Data

ATF-45101

Features

• High Output Power:

29.0␣ dBm Typical P

• High Gain at 1dB
Compression:

10.0␣ dB Typical G

• High Power Efficiency:

38% Typical at 4␣ GHz

• Hermetic Metal-Ceramic
Stripline Package

1 dB

at 4␣ GHz

1 dB

at 4␣ GHz

Description

The ATF-45101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica­tion in the 2 to 8 GHz frequency

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max.

P

G

η

g

I

V

1 dB

1 dB

add

m

DSS

P

Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 28.0 29.0
VDS = 9 V, IDS = 250 mA f = 8.0 GHz 28.0

1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA f = 4.0 GHz dB 9.0 10.0

Efficiency @ P

Transconductance: VDS = 2.5 V, IDS = 250 mA mmho 200

Saturated Drain Current: VDS = 1.75 V, VGS = 0 V m A 400 600 800

Pinch-off Voltage: VDS = 2.5 V, IDS = 12.5 mA V -5.4 -4.0 -2.0

1dB

: V

range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.

This device is suitable for applica­tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.

= 25° C

A

f = 8.0 GHz 4.0

= 9 V, IDS = 250 mA f = 4.0 GHz % 38

DS

100 mil Flange Package

5965-8736E

5-92

ATF-45101 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +14
Gate-Source Voltage V -7

Gate-Drain Voltage V -16

Drain Current mA I
Power Dissipation

[2,3]

W 3.6

Channel Temperature °C 175
Storage Temperature °C -65 to +175

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25°C.

3. Derate at 24 mW/° C for

> 24°C.

T

CASE

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

Thermal Resistance: θjc = 42°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

ATF-45101 Typical Performance, T

30

29

(dBm)

28

1 dB

P

27

26

2.0 6.04.0 8.0 10.0 12.0

G

FREQUENCY (GHz)

1 dB

P

1 dB

Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 250 mA.

20

15

10

5

0

35

30

25

20

(dBm)

(dBm)

15

OUT

1 dB

P

G

10

Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 250 mA, f = 4.0 GHz.

= 25° C

A

5

0

0 5 10 15

= 150°C

CH

[4]

PIN (dBm)

20 25 30

25

20

40

30

20

10

0

15

10

GAIN (dB)

(%)

add

5

η

0

1.0 2.0 4.0 6.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 250 mA.

MAG

14.010.0

5-93