HP ATF-44101 Datasheet
2–8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-44101
Features
• High Output Power:
32.0␣ dBm Typical P
• High Gain at 1 dB
Compression:
8.5␣ dB Typical G
• High Power Efficiency:
35% Typical at 4␣ GHz
• Hermetic Metal-Ceramic
Stripline Package
1 dB
at 4␣ GHz
1 dB
at 4␣ ␣ GHz
Description
The ATF-44101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplification in the 2 to 8 GHz frequency
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
P
G
η
g
I
V
1 dB
1 dB
add
m
DSS
P
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 31.0 32.0
VDS =9 V, IDS = 500 mA f = 6.0 GHz 31.5
1 dB Compressed Gain: VDS = 9 V, IDS = 500 mA f = 4.0 GHz dB 7.5 8.5
Efficiency @ P
Transconductance: VDS = 2.5 V, IDS = 500 mA mmho 300
Saturated Drain Current: VDS = 1.75 V, VGS = 0 V m A 800 1300 1500
Pinch-off Voltage: VDS = 2.5 V, IDS = 2 5 mA V -5.4 -4.0 -2.0
1dB
: V
range. This nominally .5␣ micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between source fingers. Total gate
periphery is 5 millimeters. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
This device is suitable for applications in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
= 25° C
A
= 9 V, I
DS
= 500 mA f = 4.0 GHz % 35
DS
100 mil Flange
f = 6.0 GHz 5.5
5-89
5965-8727E
ATF-44101 Absolute Maximum Ratings
FREQUENCY (GHz)
P
1 dB
(dBm)
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 500 mA.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 500 mA.
FREQUENCY (GHz)
GAIN (dB)
16
12
8
4
0
33
32
31
30
29
G
1 dB
(dBm)
2.0 6.04.0 8.0
P
1 dB
G
1 dB
|S21|
2
MSG
1.0 2.0 4.0 6.0
8.0 12.0
25
20
15
10
5
0
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 500 mA, f = 4 GHz.
PIN (dBm)
P
OUT
(dBm)
η
add
(%)
0 5 10 15
20 25 30
35
30
25
20
15
10
5
0
40
30
20
10
0
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Drain-Source Voltage V +14
Gate-Source Voltage V -7
Gate-Drain Voltage V -16
Drain Current mA I
Power Dissipation
[2,3]
W 6.5
Channel Temperature °C 175
Storage Temperature °C -65 to +175
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25° C.
3. Derate at 43 mW/°C for
T
> 25°C.
CASE
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
Thermal Resistance: θjc = 23°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
ATF-44101 Typical Performance, T
= 25° C
A
= 150°C
CH
[4]
5-90
Loading...