HP ATF-36163-TR1, ATF-36163-BLK Datasheet
1.5 – 18 GHz Surface Mount
Pseudomorphic HEMT
Technical Data
ATF-36163
Features
• Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
• Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
• Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Cost Surface Mount
Small Plastic Package
• Tape-and-Reel Packaging
Option Available
Applications
• 12 GHz DBS Downconverters
• 4 GHz TVRO Downconverters
• S or L Band Low Noise
Amplifiers
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
SOURCE
SOURCE
GATE SOURCE
Note: Package marking provides
orientation and identification.
36
DRAIN
SOURCE
Description
The Hewlett-Packard ATF-36163
is a low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), in the SOT-363 (SC-70)
package. When optimally matched
for minimum noise figure, it will
provide a noise figure of 1 dB at
12 GHz and 0.6␣ dB at 4 GHz.
Additionally, the ATF-36163 has
low noise-resistance, which
reduces the sensitivity of noise
performance to variations in
input impedance match. This
feature makes the design of broad
band low noise amplifiers much
easier. The performance of the
ATF-36163 makes this device the
ideal choice for use in the 2nd or
3rd stage of low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct
Broadcast Satellite (DBS) TV
systems, C-band TV Receive Only
(TVRO) LNAs, Multichannel
Multipoint Distribution Systems
(MMDS), X-band Radar detector
and other low noise amplifiers
operating in the 1.5 – 18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery
(width) of 200 microns. Proven
gold-based metallization system
and nitride passivation assure
rugged, reliable devices.
5-79
5965-4747E
ATF-36163 Absolute Maximum Ratings
Symbol Parameter Units Maximum
V
V
V
P
in max
T
T
DS
GS
GD
I
P
CH
STG
D
T
Drain - Source Voltage V +3
Gate - Source Voltage V -3
Gate Drain Voltage V -3.5
Drain Current mA I
Total Power Dissipation mW 180
RF Input Power dBm +10
Channel Temperature ° C 150
Storage Temperature °C -65 to 150
[1]
Absolute
dss
Thermal Resistance:
θ
= 160°C/W
ch-c
Note:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
ATF-36163 Electrical Specifications
T
= 25° C, ZO = 50 Ω, V
C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure
G Gain at NF
g
m
I
dss
V
p 10%
BV
GDO
Note:
1. Measured in a test circuit tuned for a typical device.
Transconductance VDS = 1.5 V, VGS = 0 V mS 50 60
Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 15 25 40
Pinchoff Voltage VDS = 1.5 V, IDS = 10% of I
Gate Drain Breakdown Voltage I
= 1.5 V, Ids = 10 mA, (unless otherwise noted).
ds
[1]
[1]
f =12.0 GHz dB 1.2 1.4
f = 12.0 GHz dB 9 10
= 30 µA V - 3.5
G
dss
V -1.0 -0.35 - 0.15
[1]
ATF-36163 Typical Parameters
T
= 25°C, ZO = 50 Ω, V
C
Symbol Parameters and Test Conditions Units Typ.
F
min
G
a
G
max
P
1dB
Minimum Noise Figure (Γ
Associated Gain f = 4 GHz dB 15.8
Maximum Available Gain
Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
under the power matched condition f = 12 GHz dBm 5
V
GS
Note:
1. G
= MAG for K > 1 and G
max
Gate to Source Voltage for IDS = 15 mA VDS = 2.0 V V - 0.2
= 2 V, Ids = 15 mA, (unless otherwise noted).
ds
= Γ
source
[1]
= MSG for K ≤ 1, which is shown on the S-parameters tables.
max
) f = 4 GHz dB 0.6
opt
5-80
f = 12 GHz d B 1.0
f = 12 GHz d B 9.4
f = 4 GH z d B 17.2
f = 1 2 G Hz d B 10.9
ATF-36163 Typical Scattering Parameters, Common Source, Z
Freq. S
11
S
21
S
12
= 50 Ω, V
O
= 1.5 V, ID = 10 mA
DS
S
22
KG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. — dB
0.5 0.99 -11 12.85 4.39 168 -37.72 0.01 79 0.51 -9 0.11 25.24
1 0.98 -22 12.70 4.31 158 -31.70 0.03 71 0.50 -18 0.17 22.26
2 0.96 -42 12.48 4.21 138 -26.02 0.05 55 0.48 -36 0.24 19.28
3 0.93 -61 12.37 4.15 118 -22.73 0.07 40 0.45 -53 0.33 17.56
4 0.87 -83 12.30 4.12 97 -20.45 0.10 23 0.40 -71 0.43 16.38
5 0.81 -106 12.16 4.06 76 -18.71 0.12 6 0.34 -92 0.51 15.43
6 0.75 -131 11.94 3.95 55 -17.52 0.13 -12 0.27 -116 0.58 14.73
7 0.67 -158 11.47 3.75 33 -16.77 0.15 -30 0.18 -144 0.69 14.12
8 0.61 176 11.01 3.55 12 -16.36 0.15 -45 0.10 174 0.79 13.69
9 0.57 143 10.47 3.34 -10 -15.97 0.16 -61 0.12 93 0.85 13.22
10 0.57 108 9.66 3.04 -32 -15.92 0.16 -77 0.22 53 0.91 12.80
11 0.59 76 8.53 2.67 -54 -16.48 0.15 -93 0.33 28 0.99 12.50
12 0.63 50 7.39 2.34 -74 -17.14 0.14 -106 0.41 9 1.07 10.65
13 0.67 26 6.10 2.02 -93 -18.27 0.12 -119 0.49 -8 1.18 9.64
14 0.72 6 4.81 1.74 -111 -19.74 0.10 -129 0.56 -22 1.30 8.99
15 0.78 -11 3.49 1.50 -128 -21.41 0.09 -138 0.63 -33 1.38 8.81
16 0.82 -24 2.20 1.29 -146 -23.10 0.07 -144 0.67 -43 1.44 8.70
17 0.87 -38 0.59 1.07 -164 -25.04 0.06 -151 0.73 -53 1.46 8.79
18 0.90 -52 -1.63 0.83 178 -29.12 0.04 -159 0.78 -65 1.80 8.58
max
[1]
Note:
1. G
= MAG for K > 1 and G
max
= MSG for K ≤ 1.
max
ATF-36163 Typical Noise Parameters
Common Source, Z
Freq. F
GHz dB dB Mag. Ang. -
2 0.48 18.77 0.78 28 0.38
3 0.53 16.75 0.75 41 0.32
4 0.57 15.17 0.68 55 0.26
5 0.61 14.14 0.60 71 0.20
6 0.66 13.23 0.55 88 0.15
7 0.71 12.06 0.48 105 0.12
8 0.77 11.22 0.38 119 0.10
9 0.83 10.50 0.32 138 0.07
10 0.89 10.02 0.23 170 0.07
11 0.97 9.44 0.18 -141 0.09
12 1.05 8.92 0.20 -92 0.13
13 1.14 8.45 0.26 -46 0.21
14 1.24 8.12 0.36 -16 0.32
15 1.37 8.08 0.48 4 0.44
16 1.51 8.11 0.59 19 0.60
17 1.68 7.97 0.64 34 0.79
18 1.89 7.59 0.70 51 1.15
min
= 50 Ω, V
O
G
= 1.5 V, ID = 10 mA
DS
a
Γ
opt
Rn/Z
2.4
2.0
1.6
(dB)
O
1.2
min
F
0.8
0.4
0
Figure 1. ATF-36163 Minimum Noise Figure and
Associated Gain vs. Frequency for
VDS = 1.5 V, ID = 10 mA.
24
20
16
12
GAIN (dB)
8
4
48 16
018
2 6 10 12
FREQUENCY (GHz)
MSG
2
|S21|
14
MAG
24
20
16
12
(dB)
a
G
8
4
0
5-81
0
Figure 2. Maximum Available Gain, Maximum
Stable Gain & Insertion Power Gain vs.
Frequency for VDS = 1.5 V, ID = 10 mA.
48 16
018
2 6 10 12
FREQUENCY (GHz)
14
Loading...