HP ATF-26884-STR, ATF-26884-TR1 Datasheet

2 – 16 GHz General Purpose
Gallium Arsenide FET

Technical Data

ATF-26884

Features

• High Output Power:

18.0␣ dBm Typical P

• High Gain:

9.0 dB Typical GSS at 12␣ GHz

• Low Cost Plastic Package

• Tape-and-Reel Packaging
Option Available

at 12␣ GHz

1 dB

[1]

Description

The ATF-26884 is a high perfor­mance gallium arsenide Schottky­barrier-gate field effect transistor

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max.

G

SS

NF
G

A

P

1 dB

g

m

I

DSS

V

P

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA f = 12.0 GHz dB 7.0 9.0

Optimum Noise Figure: VDS = 3 V, IDS = 10 mA f = 12.0 GHz dB 2.2

O

Gain @ NFO: VDS = 3 V, IDS = 10 mA f = 12.0 GHz dB 6.0

Power Output @ 1 dB Gain Compression: f = 12.0 GHz dB m 15.0 18.0
VDS = 5 V, IDS = 30 mA

Transconductance: VDS = 3 V, VGS = 0 V mmho 15 35

Saturated Drain Current: VDS = 3 V, VGS = 0 V mA 30 50 90

Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.5 -1.5 -0.5

housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.

This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.

= 25° C

A

84 Plastic Package

5-71

5965-8703E

ATF-26884 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Thermal Resistance: θjc = 300°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation

[2,3]

m W 275

Channel Temperature ° C 175
Storage Temperature °C -65 to +150

= 150°C

CH

[4]

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

ATF-26884-TR1 1000 7"

ATF-26884-STR 10 strip

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25°C.

3. Derate at 3.3 mW/°C for

> 92.5°C.

T

CASE

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-26884 Typical Performance, T

25

20

15

10

GAIN (dB)

Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 10 mA.

MSG

2

|S21|

5

0

2.0 4.0 6.0 8.0
FREQUENCY (GHz)

MAG

10.0 12.0 16.0

25

20

15

10

GAIN (dB)

5

0

2.0 4.0 6.0 8.0

Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 30 mA.

= 25° C

A

MSG

2

|S21|

FREQUENCY (GHz)

MAG

10.0 12.0 16.0

MSG

MAG

MSG

5-72

Typical Scattering Parameters, Common Emitter, Z

Freq. S

11

S

21

= 50 Ω, TA=25°C, V

O

S

12

=3 V, I

DS

=␣ 10 mA

DS␣

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

2.0 .96 -36 6.9 2.21 142 -26.6 .047 64 .81 -25

3.0 .91 -56 7.4 2.35 123 -23.0 .071 50 .77 -38

4.0 .86 -78 7.6 2.39 103 -20.6 .093 36 .70 -50

5.0 .79 -97 7.2 2.30 86 -19.5 .106 25 .66 -61

6.0 .73 -113 6.8 2.20 71 -18.9 .114 16 .62 -70

7.0 .67 -127 6.4 2.10 56 -18.4 .120 9 .61 -78

8.0 .62 -144 6.4 2.08 41 -17.9 .128 1 .58 -88

9.0 .57 -168 6.2 2.03 23 -17.5 .134 -8 .54 -101

10.0 .53 168 5.8 1.96 6 -17.3 .136 -16 .47 -116

11.0 .52 147 5.2 1.81 -10 -17.2 .138 -22 .41 -133

12.0 .49 124 4.9 1.76 -22 -17.1 .140 -26 .39 -143

13.0 .52 103 4.6 1.70 -36 -16.7 .146 -31 .37 -154

14.0 .56 80 4.0 1.58 -54 -16.3 .153 -37 .35 -171

15.0 .60 65 3.3 1.46 -72 -16.3 .153 -42 .35 173

16.0 .65 52 2.9 1.40 -83 -16.3 .153 -48 .37 132

17.0 .68 40 2.3 1.30 -99 -16.0 .158 -56 .41 101

18.0 .69 30 1.3 1.16 -112 -15.9 .159 -72 .47 87

22

Typical Scattering Parameters, Common Emitter, Z

Freq. S

11

S

21

= 50 Ω, TA=25°C, V

O

S

12

=5 V, I

DS

=␣ 30 mA

DS␣

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

2.0 .94 -41 9.2 2.88 138 -30.8 .029 65 .84 -23

3.0 .87 -65 9.5 2.97 118 -27.3 .043 51 .80 -34

4.0 .79 -89 9.3 2.93 97 -25.5 .053 40 .74 -44

5.0 .71 -109 8.7 2.73 79 -24.9 .057 35 .71 -53

6.0 .64 -126 8.1 2.54 64 -24.4 .060 33 .69 -60

7.0 .57 -142 7.5 2.38 50 -24.0 .063 31 .69 -67

8.0 .52 -162 7.2 2.30 35 -23.1 .070 30 .69 -76

9.0 .48 174 6.9 2.21 18 -21.9 .080 28 .67 -87

10.0 .48 149 6.5 2.11 1 -20.4 .095 24 .63 -100

11.0 .48 130 5.9 1.97 -14 -19.7 .104 22 .57 -114

12.0 .49 108 5.6 1.91 -25 -18.1 .125 20 .55 -122

13.0 .53 88 5.2 1.82 -39 -16.2 .155 18 .54 -132

14.0 .57 69 4.7 1.71 -55 -15.2 .173 5 .52 -146

15.0 .62 56 4.1 1.60 -75 -14.8 .182 -1 .52 -165

16.0 .70 44 3.7 1.53 -87 -13.8 .205 -16 .52 165

17.0 .75 33 3.0 1.41 -103 -12.9 .226 -28 .54 135

18.0 .74 24 2.3 1.30 -117 -13.6 .210 -44 .63 114

A model for this device is available in the DEVICE MODELS section.

22

5-73

84 Plastic Package Dimensions

0.51 (0.020)

4

SOURCE

1.52 ± 0.25

(0.060 ± 0.010)

268

SOURCE

DRAIN

3

0.20 ± 0.050

(0.008 ± 0.002)

GATE

1

2

2.15

(0.085)

5°

5.46 ± 0.25

0.51

(0.020)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

(0.215 ± 0.010)

5-74