HP ATF-25170 Datasheet
0.5 – 10 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-25170
Features
• Low Noise Figure:
0.8␣ dB Typical at 4␣ GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• High Output Power:
21.0␣ dBm Typical P
• Hermetic Gold-Ceramic
Microstrip Package
at 4␣ GHz
1 dB
Description
The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
G
P
G
g
I
DSS
V
A
1 dB
1 dB
m
P
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 4.0 GHz dB 0.8 1.0
O
Gain @ NFO: VDS =3 V, IDS = 20 mA f = 4.0 GHz dB 13.0 14.0
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 21.0
VDS =5 V, IDS =50 mA
1 dB Compressed Gain: VDS =5 V, IDS =50 mA f = 4.0 GHz dB 15.0
Transconductance: VDS = 3 V, VGS = 0 V mmho 50 80
Saturated Drain Current: VDS =3 V, VGS = 0 V m A 50 100 150
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -2.0 -0.8
housed in a hermetic, high reliability package. Its noise figure makes
this device appropriate for use in
low noise amplifiers operating in
the 0.5-10 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
= 25° C
A
70 mil Package
f = 6 0 GHz dB 1.0
f = 8.0 GHz dB 1.2
f = 6.0 GHz dB 11.5
f = 8.0 GHz dB 9.0
5-57
5965-8712E
ATF-25170 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 300°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 450
Channel Temperature °C 175
Storage Temperature °C -65 to +175
= 150°C
CH
[4]
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
MOUNTING SURFACE
= 25° C.
3. Derate at 3.3 mW/°C for
T
MOUNTING SURFACE
>40°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
ATF-25170 Noise Parameters: V
Freq. NF
GHz dB
O
Mag Ang
= 3 V, IDS = 20 mA
DS
Γ
1.0 0.6 .89 24 .78
2.0 0.7 .77 50 .53
4.0 0.8 .63 105 .33
6.0 1.0 .66 147 .06
8.0 1.2 .62 -159 .11
ATF-25170 Typical Performance, T
25
20
15
10
GAIN (dB)
5
0
0.5 1.0 2.0 4.0
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
= 3 V, IDS = 20 mA.
DS
MSG
2
|S21|
FREQUENCY (GHz)
MAG
6.0 8.0 12.0
2.0
1.5
1.0
(dB)
O
NF
0.5
0
2.0 6.04.0 10.08.0 12.0
Figure 2. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA.
opt
= 25° C
A
FREQUENCY (GHz)
RN/50
18
G
A
NF
O
15
12
(dB)
A
G
9
6
1.5
1.0
(dB)
O
0.5
NF
0
02010 40 5030 60
G
A
NF
O
IDS (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. I
VDS = 3V, f = 4.0 GHz.
DS.
16
14
(dB)
A
12
G
10
5-58
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