HP ATF-21170-STR Datasheet
5-46
0.5– 6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
70 mil Package
Description
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
Features
• Low Noise Figure:
0.9 dB Typical at 4␣ GHz
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• High Output Power:
23.0␣ dBm Typical P
1 dB
at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, T
A
= 25° C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 0.6
f = 4.0 GHz dB 0.9 1.1
f = 6.0 GHz dB 1.2
G
A
Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 16.0
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 10.0
P
1 dB
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 23.0
VDS =5 V, IDS = 80 mA
G
1 dB
1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA f = 4.0 GHz dB 13.0
g
m
Transconductance: VDS =3 V, VGS = 0 V mmho 70 120
I
DSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V m A 80 120 200
V
P
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -1.5 -0.8
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applications in the 0.5-6 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8718E
5-47
ATF-21170 Typical Performance, T
A
= 25° C
ATF-21170 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
DS
Drain-Source Voltage V +7
V
GS
Gate-Source Voltage V -4
V
GD
Gate-Drain Voltage V -8
I
DS
Drain Current mA I
DSS
P
T
Power Dissipation
[2,3]
mW 600
T
CH
Channel Temperature °C 175
T
STG
Storage Temperature °C -65 to +175
Thermal Resistance: θjc = 250°C/W; T
CH
= 150°C
Liquid Crystal Measurement: 1␣ µm Spot Size
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 4 mW/°C for
T
CASE
> 25°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-21170 Noise Parameters: V
DS
= 3 V, IDS = 20 mA
Freq. NF
O
Γ
opt
GHz dB
Mag Ang
RN/50
0.5 0.4 .93 17 .90
1.0 0.5 .85 35 .70
2.0 0.6 .70 70 .46
4.0 0.9 .59 148 .14
8.0 1.2 .54 -177 .09
FREQUENCY (GHz)
NF
O
(dB)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA, TA = 25°C.
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
1.0 4.02.0 6.0 8.0
G
A
NF
O
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS.
VDS = 3V, f = 4.0 GHz.
NF
O
(dB)
02010 40 5030 60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 3 V, IDS = 20 mA.
FREQUENCY (GHz)
GAIN (dB)
16
14
12
10
G
A
(dB)
1.5
1.0
0.5
0
G
A
NF
O
|S21|
2
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 10.0
25
20
15
10
5
0
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 80 mA.
FREQUENCY (GHz)
GAIN (dB)
|S21|
2
MSG
MAG
30
25
20
15
10
5
0
0.5 1.0 2.0 4.0
6.0 8.0 10.0
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