HP ATF-13786-TR1, ATF-13786-STR Datasheet
Surface Mount Gallium
Arsenide FET for Oscillators
Technical Data
ATF-13786
Features
• Low Cost Surface Mount
Plastic Package
• High f
• Low Phase Noise at 10 GHz:
-110 dBc/Hz @ 100 kHz Typical
• Output Power at 10 GHz:
up to 10 dBm
• Tape-and-Reel Packaging
Option Available
25
20
15
GAIN (dB)
10
5
0
1
Insertion Power Gain, Maximum
Available Gain, and Maximum Stable
Gain vs. Frequency.
VDS = 3 V, IDS = 40 mA.
: 60 GHz Typical
MAX
MSG
S
21
FREQUENCY (GHz)
MAG
MSG
51020
Description
Hewlett-Packard’s ATF-13786 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
device is designed for use in low
cost, surface mount oscillators
operating over the RF and
microwave frequency ranges. The
ATF-13786 has sufficient gain for
easy use as a negative R cell,
without excess gain that can lead
to unwanted oscillations and
mode jumping. The gate structure
used in the fabrication of this
device results in phase noise
performance superior to that of
most other MESFETs. These
features make this device
particularly well suited for low
power (< +10 dBm) commercial
oscillator applications such as are
encountered in DBS, TVRO, and
MMDS television receivers, or
hand-held transceivers operating
in the 900 MHz, 2.4 GHz, and
5.7␣ GHz ISM bands.
85 mil Plastic Surface Mount Package
Pin Configuration
4
SOURCE
DRAINGATE
1
137
2 SOURCE
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
3
5-43
5965-8721E
ATF-13786 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Drain-Source Voltage V 4
Gate-Source Voltage V -4
Gate-Drain Voltage V -6
Drain Current mA I
Power Dissipation
[2,3]
m W 225
DSS
Channel Temperature °C 150
Storage Temperature °C -65 to +150
[1]
Notes:
1. Operation of this device above
any one of these conditions
may cause permanent damage.
2. T
= 25oC (T
CASE
to be the temperature at the
ends of pins 2 and 4 where
they contact the circuit
board).
3. Derate at 3.1 mW/oC for
TC␣>␣ 60oC.
CASE
is defined
Thermal Resistance
ATF-13786 Electrical Specifications, T
[2]
: θjc = 325° C/W
= 25° C, V
C
= 3 V, IDS = 40 mA
DS
[4]
(unless noted)
Symbol Parameters and Test Conditions Units Min. Typ. Max.
2
|S21|
P
1 dB
G
1 dB
PN Phase Noise (100 kHz offset)
g
m
I
DSS
V
P
V
BDG
Notes:
4. Recommended maximum bias conditions for use as an oscillator.
5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.
Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.
Insertion Power Gain f = 10 GHz dB 6.0
Power at 1 dB Gain Compression f = 10 GHz dBm 15 16.5
1 dB Compressed Gain f = 10 GHz dB 6.5 7.5
[5]
f = 10 GHz dBc/Hz -110
Transconductance VDS = 3 V, VGS = 0 V mS 25 55
Saturated Drain Current VDS = 3 V, VGS = 0 V mA 50 70 100
Pinchoff Voltage VDS = 3 V, IDS = 1 mA V -2.0 -1.5 -0.5
Gate - Drain Breakdown Voltage IDG = 0.1 mA V 6.5 7
5-44
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