HP ATF-13736-TR1, ATF-13736-STR Datasheet

2–16 GHz Low Noise
Gallium Arsenide FET

Technical Data

ATF-13736

Features

• Low Noise Figure:

1.8␣ dB Typical at 12␣ GHz

• High Associated Gain:

9.0␣ dB Typical at 12␣ GHz

• High Output Power:

17.5␣ dB Typical at 12␣ GHz

• Cost Effective Ceramic
Microstrip Package

• Tape-and-Reel Packaging
Option Available

[1]

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max.

NF

G

A

P

1 dB

G

1 dB

g

m

I

DSS

V

P

Note:

1.

Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.

Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 1.5

O

Gain @ NFO: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 11.5

Power Output @ 1 dB Gain Compression: f =12.0 GHz dBm 17.5
VDS = 4 V, IDS = 40 mA

1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5

Transconductance: VDS = 2.5 V, VGS = 0 V mmho 25 55

Saturated Drain Current: VDS = 2.5 V, VGS = 0 V mA 40 50 90

Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA V -4.0 -1.5 -0.5

Description

The ATF-13736 is a high perfor­mance gallium arsenide Schottky­barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri­ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.

This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of

= 25° C

A

f = 12.0 GHz dB 1.8 2.2
f = 14.0 GHz dB 2.1

f = 12.0 GHz dB 8.0 9.0
f = 14.0 GHz dB 7.0

36 micro-X Package

250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.

5-39

5965-8722E

ATF-13736 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Thermal Resistance: θjc = 400°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -6
Drain Current mA I
Power Dissipation

[2,3]

m W 225

Channel Temperature °C 175

Storage Temperature

[4]

°C -65 to +175

= 150°C

CH

[5]

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

ATF-13736-TR1 1000 7"

ATF-13736-STR 10 strip

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25°C.

3. Derate at 2.5 mW/°C for

> 85°C.

T

CASE

4. Storage above +150°C may tarnish

the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely

stored up to 175°C.

5. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-13736 Noise Parameters: V

Freq. NF

GHz dB

O

Mag Ang

= 2.5 V, IDS = 20 mA

DS

Γ

opt

4.0 1.1 .71 102 .10

6.0 1.3 .55 147 .07

8.0 1.5 .46 -144 .19

12.0 1.8 .50 -40 .88

14.0 2.1 .52 -2 1.17

ATF-13736 Typical Performance, T

16
14

G

A

2.0

1.5

(dB)

1.0

O

NF

0.5
0

6.0 10.08.0 12.0 14.0 16.0
FREQUENCY (GHz)

NF

O

Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.

12

(dB)

A

10

G

8
6

GAIN (dB)

Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.

= 25° C

A

25

20

15

10

5

0

2.0 4.0 6.0 8.0
FREQUENCY (GHz)

MSG

|S21|

2

RN/50

MAG

10.0 12.0 16.0

25

20

15

10

GAIN (dB)

5

0

2.0 4.0 6.0 8.0

MSG

MAG

2

|S21|

FREQUENCY (GHz)

MSG

10.0 12.0 16.0

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.

5-40