HP ATF-13336-TR1, ATF-13336-STR Datasheet

2 – 16 GHz Low Noise
Gallium Arsenide FET

Technical Data

ATF-13336

Features

• Low Noise Figure:

1.4␣ dB Typical at 12␣ GHz

• High Associated Gain:

9.0␣ dB Typical at 12␣ GHz

• High Output Power:

17.5␣ dBm Typical P
12␣ GHz

• Cost Effective Ceramic
Microstrip Package

• Tape-and-Reel Packaging
Option Available

[1]

1 dB

at

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max.

NF

G

A

P

1 dB

G

1 dB

g

m

I

DSS

V

P

Note:

1.

Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.

Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 1.2

O

Gain @ NFO: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 11.5

Power Output @ 1 dB Gain Compression: f = 12.0 GHz d Bm 17.5
VDS = 4 V, IDS = 40 mA

1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5

Transconductance: VDS = 2.5 V, VGS = 0 V mmho 25 55

Saturated Drain Current: VDS = 2.5 V, VGS = 0 V mA 40 50 90

Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA V -4.0 -1.5 -0.5

Description

The ATF-13336 is a high perfor­mance gallium arsenide Schottky­barrier-gate field effect transistor
housed in a cost effective micro­strip package. Its premium noise
figure makes this device appropri­ate for use in low noise amplifiers
operating in the 2-16␣ GHz
frequency range.

This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.

= 25° C

A

f = 12.0 GHz dB 1.4 1.6
f = 14.0 GHz 1.6

f = 12.0 GHz dB 8.0 9.0
f = 14.0 GHz dB 7.5

36 micro-X Package

5965-8724E

5-36

ATF-13336 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Thermal Resistance: θjc = 400°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -6
Drain Current mA I
Power Dissipation

[2,3]

m W 225

Channel Temperature °C 175
Storage Temperature °C -65 to +175

= 150°C

CH

[5]

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

ATF-13336-TR1 1000 7"

ATF-13336-STR 10 strip

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25°C.

3. Derate at 2.5mW/°C for

> 85°C.

T

CASE

4. Storage above +150°C may tarnish

the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it

may be safely stored up to 175°C.

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-13336 Noise Parameters: V

Freq. NF

GHz dB

O

Mag Ang

= 2.5 V, IDS = 20 mA

DS

Γ

opt

4.0 0.8 .63 93 .27

6.0 1.1 .47 138 .10

8.0 1.2 .40 -153 .20

12.0 1.4 .52 -45 .88

14.0 1.6 .57 -2 1.3

ATF-13336 Typical Performance, T

16
14

G

A

2.0

1.5

(dB)

1.0

O

NF

0.5
0

6.0 10.08.0 12.0 14.0 16.0
FREQUENCY (GHz)

NF

O

Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.

12

(dB)

A

10

G

8
6

(dB)

O

NF

Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2.5V, f = 12.0 GHz.

= 25° C

A

2.5

2.0

1.5

1.0
02010 40 5030 60

G

A

NF

O

IDS (mA)

DS.

RN/50

14

12

10

8

25

20

(dB)

A

G

15

10

GAIN (dB)

5

0

2.0 4.0 6.0 8.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.

MAG

10.0 12.0 16.0

5-37