查询AT-32011供应商
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32011
AT-32033
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB G
AT-32033: 1 dB NF, 12.5 dB G
• Characterized for End-OfLife Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available
[1]
Outline Drawing
EMITTER COLLECTOR
320
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320
Description
Hewlett Packard’s AT-32011 and
AT-32033 are high performance
NPN bipolar transistors that have
been optimized for maximum ft at
low voltage operation, making
A
them ideal for use in battery
powered applications in wireless
A
markets. The AT-32033 uses the
3␣ lead SOT-23, while the AT-320 11
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20␣ emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett Packard’s
10␣ GHz ft, 30 GHz f
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, selfalignment techniques, and gold
metalization in the fabrication of
these devices.
MAX
Self-
BASE EMITTER
SOT-23 (AT-32033)
Note:
1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”
4-53
5965-8920E
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
V
V
T
EBO
CBO
CEO
I
C
P
T
STG
T
j
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 11
Collector-Emitter Voltage V 5.5
Collector Current mA 32
Power Dissipation
[2, 3]
mW 200
Junction Temperature °C 150
Storage Temperature °C -65 to 150
[1]
Thermal Resistance
[2]
:
θjc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
Mounting Surface
3. Derate at 1.82 mW/°C for TC > 40°C.
= 25°C.
Electrical Specifications, T
= 25°C
A
AT-32011 AT-32033
Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.
NF Noise Figure
14
[1]
[1]
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 1.0
G
h
FE
Associated Gain
A
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 12.5
Forward Current Transfer Ratio
[1]
1.3
[1]
11
[2]
1.0
12.5
[2]
1.3
[2]
VCE = 2.7 V, IC = 2 mA – 70 300 70 300
I
CBO
Collector Cutoff Current
VCB = 3 V µA 0.2 0.2
I
EBO
Emitter Cutoff Current
VEB = 1 V µA 1.5 1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
1000 pF
RF IN
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
V
BB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 30
L = 60
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
W = 10 L = 1870
NOT TO SCALE
V
CC
CKT A: 25 Ω
CKT B: 5 Ω
W = 10
CKT A: L = 105
CKT B: L = 850
1000 pF
RF OUT
[2]
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
4-54
Characterization Information, T
= 25°C
A
AT-32011 AT-32033
Symbol Parameters and Test Conditions Units Typ. Typ.
P
1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 13 13
G
1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16.5 15
IP
3
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 24
2
|S21|
Gain in 50 Ω System
E
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 13 11.5
2
1.5
1
0.5
NOISE FIGURE (dB)
0
0
0.5 2.5
FREQUENCY (GHz)
1 1.5
1 mA
2 mA
5 mA
10 mA
20 mA
2
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at VCE␣ = 2.7 V.
20
15
10
5
P 1dB (dBm)
2 mA
0
5 mA
10 mA
20 mA
-5
0.5 2.5
0
1.0 1.5
FREQUENCY (GHz)
2.0
25
20
15
Ga (dB)
10
1 mA
2 mA
5 mA
5
10 mA
20 mA
0
0.5 2.5
0
1.0 1.5
FREQUENCY (GHz)
2.0
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2.7 V.
20
15
10
G 1dB (dB)
2 mA
5
5 mA
10 mA
20 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
20
15
10
Ga (dB)
1 mA
2 mA
5
5 mA
10 mA
20 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2.7 V.
20
15
10
G 1dB (dB)
2 mA
5
5 mA
10 mA
20 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣ = 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 2.7 V.
4-55
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 2.7 V.
AT-32011, AT-32033 Typical Performance
20
15
10
5
P 1dB (dBm)
2 mA
0
5 mA
10 mA
20 mA
-5
0.5 2.5
0
1.0 1.5
FREQUENCY (GHz)
2.0
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣= 5 V.
10
2 mA
7.5
2.5
P 1dB (dBm)
-2.5
5 mA
5
0
-5
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
20
15
10
G 1dB (dB)
2 mA
5
5 mA
10 mA
20 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣= 5 V.
20
15
10
G 1dB (dB)
5
2 mA
5 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
20
15
10
G 1dB (dB)
2 mA
5
5 mA
10 mA
20 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣= 5 V.
20
15
10
G 1dB (dB)
5
2 mA
5 mA
0
0
1.0 1.5
0.5 2.5
FREQUENCY (GHz)
2.0
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣= 1 V.
25
20
15
10
Ga (dBm)
5
0
-50
TEMPERATURE (°C)
Ga
NF
0 100
50
Figure 14. AT-32011 Noise Figure and
Associated Gain at VCE␣= 2.7 V,
IC␣ =␣ 2␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣= 1 V.
2.5
2.0
1.5
1.0
NOISE FIGURE (dB)
0.5
0
Figure 15. AT-32033 Noise Figure and
Associated Gain at VCE␣= 2.7 V,
IC␣ =␣ 2␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
25
20
15
10
Ga (dBm)
5
0
-50
Ga
NF
0 100
TEMPERATURE (°C)
50
4-56
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣= 1 V.
2.5
2.0
1.5
1.0
0.5
0
25
20
15
10
IP3 (dBm)
NOISE FIGURE (dB)
5
0
0.5 2.5
0
2 mA
5 mA
10 mA
20 mA
1.0 1.5
FREQUENCY (MHz)
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at VCE␣ = 2 .7 V, with Optimal
Tuning.
2.0
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
GAIN (dB)
0
-5
FREQUENCY (GHz)
23
25
15
5
4
15
MSG
MAG
S21
MSG
Freq. S
11
S
21
S
12
= 1 V, IC = 1 mA
CE
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.59 172 -33.55 0.021 83 0.99 -5
0.5 0.88 -52 10.13 3.21 141 -20.85 0.091 59 0.92 -21
0.9 0.78 -86 8.67 2.71 117 -17.62 0.132 41 0.82 -32
1.0 0.75 -94 8.35 2.62 112 -17.27 0.137 37 0.79 -35
1.5 0.67 -127 6.35 2.08 89 -16.30 0.153 23 0.71 -45
1.8 0.63 -144 5.25 1.83 77 -16.28 0.154 16 0.67 -50
2.0 0.61 -155 4.75 1.73 70 -16.42 0.151 13 0.65 -53
2.4 0.59 -175 3.48 1.49 57 -16.86 0.144 9 0.62 -59
3.0 0.59 157 1.77 1.23 40 -17.89 0.128 8 0.61 -68
4.0 0.63 120 -0.39 0.96 18 -18.40 0.120 23 0.59 -84
5.0 0.69 94 -2.39 0.76 0 -15.60 0.166 35 0.59 -104
25
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq. F
min
Γ
opt
R
n
GHz dB Mag Ang –
[1]
0.5
0.42 0.79 26 0.44
0.9 0.71 0.70 54 0.35
1.8 1.37 0.53 119 0.18
2.4 1.80 0.55 158 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
Freq. S
11
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.58 170 -32.75 0.023 83 0.99 -5
0.5 0.81 -52 9.88 3.12 134 -20.30 0.097 60 0.90 -22
0.9 0.61 -87 8.07 2.53 107 -17.57 0.132 46 0.78 -33
1.0 0.56 -95 7.65 2.41 101 -17.24 0.137 44 0.76 -35
1.5 0.41 -136 5.43 1.87 77 -16.61 0.148 39 0.68 -42
1.8 0.36 -160 4.30 1.64 66 -16.36 0.152 41 0.65 -46
2.0 0.34 -177 3.74 1.54 59 -16.05 0.158 44 0.63 -49
2.4 0.34 154 2.49 1.33 47 -15.10 0.176 49 0.61 -55
3.0 0.38 119 0.96 1.12 32 -12.77 0.230 55 0.59 -65
4.0 0.46 81 -0.84 0.91 15 -8.68 0.368 50 0.56 -87
5.0 0.51 56 -1.90 0.80 5 -5.68 0.520 37 0.51 -114
S
21
S
15
GAIN (dB)
5
-5
0
15
Figure 17. AT-32011 Gains vs.
Frequency at VCE␣ = 1 V, IC␣ = 1 mA.
CE
12
MSG
S21
23
FREQUENCY (GHz)
= 1 V, IC = 1 mA
S
22
MAG
4
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Freq. F
min
Γ
opt
GHz dB Mag Ang –
[1]
0.5
0.42 0.87 25 0.48
0.9 0.71 0.73 55 0.34
1.8 1.37 0.42 143 0.11
2.4 1.80 0.50 -162 0.07
4-57
R
n
Figure 18. AT-32033 Gains vs.
Frequency at VCE␣ = 1 V, IC␣ = 1 mA.
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
MSG
Freq. S
11
S
21
S
12
= 2.7 V, IC = 2 mA
CE
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -13 16.67 6.81 170 -35.25 0.017 82 0.99 -6
0.5 0.80 -60 15.10 5.69 136 -23.07 0.070 57 0.86 -24
0.9 0.67 -97 12.97 4.45 112 -20.34 0.096 41 0.73 -35
1.0 0.64 -104 12.48 4.21 107 -20.05 0.099 39 0.70 -37
1.5 0.55 -137 10.04 3.18 86 -19.21 0.110 30 0.61 -45
1.8 0.51 -154 8.77 2.75 76 -19.04 0.112 28 0.58 -49
2.0 0.50 -165 8.13 2.55 70 -18.99 0.112 27 0.56 -52
2.4 0.48 176 6.75 2.18 58 -18.84 0.114 27 0.54 -57
3.0 0.49 150 4.97 1.77 43 -18.52 0.119 30 0.52 -64
4.0 0.54 116 2.73 1.37 22 -16.98 0.142 36 0.50 -77
5.0 0.61 92 0.83 1.10 4 -14.50 0.188 37 0.50 -95
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. F
min
GHz dB Mag Ang –
[1]
0.5
0.57 0.69 22 0.30
0.9 0.78 0.60 51 0.25
1.8 1.25 0.42 117 0.14
2.4 1.57 0.44 159 0.08
Γ
opt
R
n
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
Freq. S
11
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.93 -13 16.61 6.77 167 -34.89 0.018 82 0.99 -6
0.5 0.68 -56 14.29 5.18 127 -23.10 0.070 61 0.83 -22
0.9 0.44 -86 11.48 3.75 101 -20.35 0.096 55 0.71 -30
1.0 0.39 -93 10.88 3.50 96 -19.91 0.101 54 0.70 -31
1.5 0.23 -129 8.16 2.56 76 -17.99 0.126 55 0.64 -36
1.8 0.18 -156 6.89 2.21 66 -16.89 0.143 57 0.62 -39
2.0 0.16 -176 6.19 2.04 60 -16.14 0.156 57 0.61 -42
2.4 0.17 146 4.91 1.76 50 -14.70 0.184 58 0.60 -47
3.0 0.22 108 3.35 1.47 36 -12.51 0.237 57 0.58 -56
4.0 0.32 76 1.51 1.19 18 -9.19 0.347 51 0.55 -73
5.0 0.40 56 0.17 1.02 4 -6.54 0.471 40 0.51 -95
S
21
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. F
min
GHz dB Mag Ang –
[1]
0.5
0.9 0.78 0.63 49 0.28
1.8 1.25 0.32 136 0.10
2.4 1.57 0.40 -159 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0.57 0.77 15 0.36
Γ
opt
R
n
4-58
Figure 19. AT-32011 Gains vs.
Frequency at VCE␣ = 2.7 V, IC␣ = 2 mA.
= 2.7 V, IC = 2 mA
CE
S
12
Figure 20. AT-32033 Gains vs.
Frequency at VCE␣ = 2 .7 V, IC␣ = 2 mA.
S
22
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MAG
S21
MSG
MSG
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
S21
MSG
MAG
MSG
Freq. S
11
S
21
S
12
= 2.7 V, IC = 20 mA
CE
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.52 -49 31.08 35.79 149 -37.78 0.013 72 0.83 -22
0.5 0.36 -138 22.96 14.06 102 -28.93 0.036 62 0.40 -42
0.9 0.34 -168 18.33 8.25 86 -25.15 0.055 64 0.31 -42
1.0 0.34 -174 17.46 7.47 83 -24.41 0.060 64 0.30 -42
1.5 0.34 165 14.13 5.09 71 -21.35 0.086 63 0.28 -45
1.8 0.34 155 12.61 4.27 64 -19.92 0.101 61 0.28 -49
2.0 0.35 148 11.74 3.86 60 -19.08 0.111 60 0.27 -52
2.4 0.36 136 10.23 3.25 52 -17.60 0.132 57 0.27 -58
3.0 0.39 120 8.38 2.62 40 -15.86 0.161 51 0.26 -67
4.0 0.45 98 6.00 2.00 23 -13.68 0.207 42 0.24 -84
5.0 0.52 82 4.25 1.63 7 -11.93 0.253 32 0.23 -106
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq. F
min
Γ
opt
R
n
GHz dB Mag Ang –
[1]
0.5
1.39 0.15 65 0.16
0.9 1.51 0.14 105 0.13
1.8 1.78 0.28 -164 0.12
2.4 1.96 0.40 -142 0.13
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Figure 21. AT-32011 Gains vs.
Frequency at VCE␣ = 2.7 V, IC␣ = 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
Freq. S
11
S
21
S
12
= 2.7 V, IC = 20 mA
CE
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.50 -35 29.84 31.03 137 -37.08 0.014 77 0.79 -18
0.5 0.16 -52 19.58 9.53 94 -25.35 0.054 77 0.53 -20
0.9 0.08 -36 14.81 5.50 81 -20.63 0.093 75 0.50 -24
1.0 0.07 -31 13.96 4.99 78 -19.66 0.104 74 0.50 -25
1.5 0.06 12 10.71 3.43 66 -16.31 0.153 69 0.49 -31
1.8 0.07 31 9.31 2.92 60 -14.75 0.183 66 0.48 -35
2.0 0.08 40 8.50 2.66 56 -13.85 0.203 63 0.47 -38
2.4 0.11 48 7.16 2.28 48 -12.32 0.242 59 0.46 -44
3.0 0.15 53 5.62 1.91 37 -10.49 0.299 52 0.43 -54
4.0 0.21 52 3.86 1.56 20 -8.11 0.393 41 0.39 -71
5.0 0.26 48 2.61 1.35 6 -6.34 0.482 29 0.33 -91
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq. F
GHz dB Mag Ang –
[1]
0.5
0.9 1.51 0.12 100 0.22
1.8 1.78 0.28 -135 0.14
2.4 1.96 0.46 -107 0.22
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
min
1.39 0.15 45 0.28
Γ
opt
4-59
R
n
Figure 22. AT-32033 Gains vs.
Frequency at VCE␣ = 2 .7 V, IC␣ = 20 mA.
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Freq. S
11
S
21
S
12
= 5 V, IC = 2 mA
CE
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -13 16.65 6.80 170 -35.84 0.016 82 0.99 -6
0.5 0.81 -57 15.18 5.74 137 -23.56 0.066 58 0.87 -23
0.9 0.68 -93 13.16 4.55 113 -20.72 0.092 43 0.74 -34
1.0 0.64 -100 12.69 4.31 109 -20.42 0.095 40 0.72 -36
1.5 0.55 -133 10.31 3.28 88 -19.49 0.106 32 0.63 -43
1.8 0.51 -150 9.05 2.84 78 -19.29 0.109 29 0.60 -47
2.0 0.49 -161 8.43 2.64 71 -19.22 0.109 28 0.58 -50
2.4 0.47 180 7.06 2.25 60 -19.03 0.112 29 0.55 -55
3.0 0.47 153 5.29 1.84 45 -18.72 0.116 31 0.54 -62
4.0 0.52 118 3.07 1.42 24 -17.19 0.138 37 0.52 -75
5.0 0.59 94 1.17 1.14 6 -14.73 0.183 38 0.51 -92
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. F
min
GHz dB Mag Ang –
[1]
0.5
0.52 0.73 20 0.34
0.9 0.75 0.63 49 0.28
1.8 1.26 0.44 111 0.16
2.4 1.60 0.45 153 0.09
Γ
opt
R
n
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
Freq. S
11
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -13 16.56 6.73 167 -35.39 0.017 82 0.99 -5
0.5 0.69 -54 14.34 5.21 128 -23.74 0.065 62 0.85 -21
0.9 0.45 -82 11.62 3.81 102 -20.92 0.090 56 0.73 -28
1.0 0.40 -89 11.03 3.56 98 -20.35 0.096 55 0.72 -30
1.5 0.23 -121 8.33 2.61 77 -18.49 0.119 56 0.66 -35
1.8 0.17 -147 7.04 2.25 68 -17.39 0.135 58 0.65 -37
2.0 0.15 -167 6.36 2.08 62 -16.59 0.148 59 0.63 -40
2.4 0.14 151 5.06 1.79 51 -15.14 0.175 60 0.62 -44
3.0 0.20 109 3.52 1.50 37 -12.92 0.226 59 0.61 -53
4.0 0.31 76 1.66 1.21 19 -9.55 0.333 53 0.59 -70
5.0 0.38 55 0.26 1.03 5 -6.80 0.457 42 0.55 -90
S
21
S
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA
Freq. F
min
GHz dB Mag Ang –
[1]
0.5
0.52 0.79 15 0.42
0.9 0.75 0.65 48 0.30
1.8 1.26 0.33 127 0.11
2.4 1.60 0.39 -166 0.07
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γ
opt
R
n
4-60
Figure 23. AT-32011 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 2 mA.
= 5 V, IC = 2 mA
CE
12
30
20
MSG
GAIN (dB)
10
S21
0
0
15
FREQUENCY (GHz)
Figure 24. AT-32033 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 2 mA.
S
22
MAG
23
MSG
4
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MAG
S21
MSG
MSG
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
Freq. S
11
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.58 -43 31.28 36.64 151 -38.13 0.012 72 0.83 -21
0.5 0.35 -128 23.51 14.99 103 -29.05 0.035 62 0.42 -40
0.9 0.31 -161 18.93 8.84 87 -25.30 0.054 64 0.33 -40
1.0 0.30 -167 18.06 8.00 84 -24.57 0.059 64 0.32 -40
1.5 0.29 170 14.74 5.46 72 -21.50 0.084 63 0.30 -44
1.8 0.30 158 13.22 4.58 65 -20.06 0.099 61 0.29 -47
2.0 0.30 151 12.35 4.15 61 -19.23 0.109 60 0.29 -50
2.4 0.32 138 10.85 3.49 53 -17.77 0.129 57 0.28 -56
3.0 0.35 121 8.99 2.82 42 -16.03 0.158 52 0.27 -64
4.0 0.41 98 6.64 2.15 25 -13.85 0.203 42 0.25 -80
5.0 0.48 83 4.90 1.76 9 -12.12 0.248 33 0.24 -100
S
21
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Freq. F
min
Γ
opt
R
n
GHz dB Mag Ang –
[1]
0.5
1.38 0.18 50 0.20
0.9 1.50 0.15 88 0.16
1.8 1.78 0.23 176 0.13
2.4 1.96 0.34 -156 0.12
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V
Freq. S
11
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.55 -31 30.00 31.61 138 -37.72 0.013 78 0.81 -16
0.5 0.20 -44 19.91 9.90 95 -25.85 0.051 77 0.56 -19
0.9 0.13 -31 15.15 5.72 82 -21.01 0.089 75 0.53 -22
1.0 0.12 -28 14.30 5.19 79 -20.18 0.098 74 0.53 -23
1.5 0.10 -7 11.03 3.56 68 -16.77 0.145 69 0.52 -30
1.8 0.09 5 9.63 3.03 61 -15.19 0.174 66 0.51 -33
2.0 0.10 13 8.82 2.76 57 -14.33 0.192 64 0.50 -36
2.4 0.11 25 7.49 2.37 50 -12.77 0.230 60 0.49 -42
3.0 0.13 36 5.93 1.98 39 -10.90 0.285 54 0.47 -51
4.0 0.18 42 4.19 1.62 23 -8.50 0.376 43 0.42 -67
5.0 0.22 43 2.98 1.41 8 -6.65 0.465 31 0.37 -86
S
21
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Γ
opt
R
n
4-61
Freq. F
GHz dB Mag Ang –
[1]
0.5
min
1.38 0.25 35 0.30
0.9 1.50 0.19 85 0.23
1.8 1.78 0.21 -150 0.14
2.4 1.96 0.39 -114 0.19
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
= 5 V, IC = 20 mA
CE
S
12
Figure 25. AT-32011 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 20 mA.
= 5 V, IC = 20 mA
CE
S
12
30
20
MAG
GAIN (dB)
10
0
Figure 26. AT-32033 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 20 mA.
S21
0
15
FREQUENCY (GHz)
S
S
23
22
22
MSG
4
Ordering Information
Part Number Increment Comments
AT-32011-BLK 100 Bulk
AT-32011-TR1 3000 7 " Reel
AT-32033-BLK 100 Bulk
AT-32033-TR1 3000 7 " Reel
Package Dimensions
SOT-143 Plastic Package SOT-23 Plastic Package
PACKAGE
MARKING
CODE
0.60 (0.024)
0.45 (0.018)
C
E
XXX
B
2.04 (0.080)
1.78 (0.070)
TOP VIEW
E
0.92 (0.036)
0.78 (0.031)
1.40 (0.055)
1.20 (0.047)
0.54 (0.021)
0.37 (0.015)
2.65 (0.104)
2.10 (0.083)
1.02 (0.040)
0.89 (0.035)
PACKAGE
MARKING
CODE
0.60 (0.024)
0.45 (0.018)
C
XXX
BE
2.04 (0.080)
1.78 (0.070)
TOP VIEW
0.54 (0.021)
0.37 (0.015)
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.10 (0.004)
0.013 (0.0005)
SIDE VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.15 (0.006)
0.09 (0.003)
0.69 (0.027)
0.45 (0.018)
END VIEW
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.10 (0.004)
0.013 (0.0005)
SIDE VIEW END VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.152 (0.006)
0.066 (0.003)
0.69 (0.027)
0.45 (0.018)
4-62
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