Datasheet HT23C020 Datasheet (Holtek Semiconductor Inc)

Features

Operating voltage 2.7V~5.5V
Low power consumption
Operation: 25mA max. (VCC=5V) 10mA max. (V
Standby: 30µA max. (VCC=5V) 10
Access time:150ns max. (VCC=5V)
µA max. (V
250ns max. (V
CC
CC
=3V)
CC
=3V)
=3V)

General Description

The HT23C020 is a read-only memory with high performance CMOS storage device whose 2048K of memory is arranged into 262144 words by 8 bits.
For applica tion flexibility, the chip enable and output enabl e control pins can be selected a s active high or active low. This flexibility not only allows easy interface with most microproc­essors, but also eliminates bus contention in
HT23C020
CMOS 256K×8-Bit Mask ROM
262144×8 bits of mask ROM
Mask option s: chip enab le CE/CE/OE1/OE1, CE1/
CE1/OE2/OE2/NC and output enable
OE/
multiple bus mi cropro cessor syste ms. An add i­tional feature of the HT23C020 is its ability to enter the standb y mode wh enever the chip en­able (CE/ ducing current consumption to below 30 combination of these functions make the chip suitable for high density low power memory applications.
OE/NC TTL compatible inputs and outputs Tristate outputs Fully static operation Package type: 32-pin DIP/SOP/PLCC
CE or CE1/CE1) is inactive, thus re-
µA. The

Block Diagram

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Pin Assignment

Pin Description

HT23C020
Pin Name I/O Description
A0~A17 I Address inputs D0~D7 O Data outputs
CE/OE1/OE1 I Chip enable, output enable input
CE/
CE1/OE2/OE2/NC I Chip enable, output enable input
CE1/ VSS I Negative power supply VCC I Positive power supply
OE/NC I Output enable input
OE/ NC No connection

Operation Truth Table

Mode CE /CE CE1/CE1 OE/OE A0~A17 D0~D7
Read H/L H/L H/L Valid Data Out Deselect H/L H/L L/H X High Z Standby L/H X X X High Z Standby X L/H X X High Z
Note: H=V
, L=VIL, X=VIH or V
IH
IL
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HT23C020

Absolu te Maximum Ra tin g s*

Supply Voltage.................................–0.3V to 6V Storage Temperature.................–50°C to 125°C
Input Voltage........................–0.3V to V
*Note: These are stress ra tings on ly. Stresses exceeding the range specified under “Abso lute Maxi -
mum Ratings” ma y cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme condition s may affect device reliability.

D.C. Characteristics

Supply voltage: 2.7V~3.6V Ta=–40°C to 85°C
+0.3V Operating Temperature ..............–40°C to 85°C
CC
Symbol Parameter
V
CC
I
CC
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
STB1
I
STB2
C
IN
C
OUT
Operating Voltage 2.7 3.6 V Operating Current 3V Input Low Voltage 3V V
Input High Voltage 3V 2.0 V Output Low Voltage 3V IOL= 2.1mA 0.4 V Output High Voltage 3V IOH= –0.4mA 2.4 V Input Leakage Current 3V VIN= 0 to V Output Leakage Current 3V V
Standby Current 3V
Standby Current 3V Input Capacitance (See note) f= 1MHz 10 pF
Output Capacitance (See note) f = 1MHz 10 pF
Test Conditions
V
CC
Conditions
O/P Unload, f= 5MHz
= 0 to V
OUT
CE=V
IL
CE=V
IH
0.2V
CE CEVCC-0.2V
CC
CC
Note: These parameters are periodically sampled but not 100% tested.
Min. Typ. Max. Unit
——10mA
0.4 V
SS
V
CC
V
CC
——10µA ——10µA
——500µA
——10
µA
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HT23C020
Supply voltage: 4.5V~5.5V Ta=–40°C to 85°C
Symbol Parameter
V
CC
I
CC
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
STB1
I
STB2
C
IN
C
OUT
Operating Voltage 4.5 5.5 V Operating Current 5V Input Low Voltage 5V V
Input High Voltage 5V 2.2 V Output Low Voltage 5V IOL= 3.2mA 0.4 V Output High Voltage 5V IOH= –1mA 2.4 V Input Leakage Current 5V VIN= 0 to V Output Leakage Current 5V V
Standby Current 5V
Standby Current 5V Input Capacitance (See note) f= 1MHz 10 pF
Output Capacitance (See note) f = 1MHz 10 pF
Test Conditions
V
CC
Conditions
O/P Unload, f= 5MHz
= 0 to V
OUT
CE=V
IL
CE=V
IH
0.2V
CE CEVCC-0.2V
CC
Min. Typ. Max. Unit
——25mA
0.8 V
SS
——10µA
CC
——10µA 1.5 mA
——30
CC
CC
V
V
µA
Note: These parameters are periodically sampled but not 100% tested.

A.C. Characteristics Ta=–40°C to 85°C

=2.7V~3.6V VCC=4.5V~5.5V
V
Symbol Parameter
CC
Min. Max. Min. Max.
t
CYC
t
AA
t
ACE
t
AOE
t
OH
t
OD
t
OE
Cycle Time 250 150 ns Address Access Time 250 150 ns Chip Enable Access Time 250 150 ns Output Enable Access Time 150 80 ns Output Hold Time 10 ns Output Disable Time (See Note) 70 ns Output Enable Time (See Note) 10 ns
Note: These parameters are periodically sampled but not 100% tested.
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Unit
A.C. test conditions
Output load: see figure right Input rise and fall time: 10ns Input pulse levels : 0.4V to 2.4V Input and output timing reference levels:
0.8V and 2.0V (V
=5V), 1.5V (VCC=3V)
CC

Functional Description

The HT23C020 has two modes, namely data read mode and standby mode, controlled by CE/
CE/OE1/OE1,CE1/CE1/OE2/OE2/NC and
OE/
OE/NC inputs.
Standby mode The HT23C020 has lower current consumption,
controlled by the chip enable input (CE/ CE1/
CE1). When a low/high level is applied to the CE/ output enable (OE/
CE or CE1/CE1 input, regardless of the
OE/NC) states, the chip will
enter the standby mode.
CE and
HT23C020
Output load circuit
Data read mode When both the chip enable (CE/
CE1/
CE1/OE2/OE2/NC) and the output en-
able (OE/
OE/NC) are active, the chip is in data read mode. Otherwise, active CE/ CE1/
CE1 and inactive OE/OE/NC result in deselect mode. The output will remain in Hi-Z state.
CE/OE1/OE1,
CE,

Timing Diagrams

Propagation delay due to address (CE/CE/OE1/OE1, CE1/CE1/OE2/OE2 and OE/
Propagation delay due to chip and output enable (address valid)
OE are active)
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Characteristic Curves

HT23C020
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HT23C020
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HT23C020 MASK ROM ORDERING SHEET

Custom:
Input Medium: EPROM DISK File (Mail Address: romfile@holtek.com.tw) OTHER
HT23C020
User No. Type/Ref. Name Q’ty Check Sum
Control Pin and Package Form Option: (a) 32 Pin Type Pin 22: Pin 31: Pin 24: (b) Package Form:
Companion User No. Package Marking : Delivery Date : Q’ty:
CUSTOM CONFIRMED BY :
(C1) CE (C2) CE (D1) OE1 (D2) OE1
(C1) CE1 (C2) CE1 (C3) NC (D1) OE2 (D2) OE2 (D3) NC (1) OE (2) OE (3) NC
(1) Chip Form (2) 32 DIP (3) 32 SOP (4) 32 PLCC
(NAME, DATE, POSITION & CO. CHOP)
Memory Address
Start End
HOL TEK CONFI RMED BY:
(SALES) (SALES MANAGER)
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