The HT23C020 is a read-only memory with
high performance CMOS storage device whose
2048K of memory is arranged into 262144
words by 8 bits.
For applica tion flexibility, the chip enable and
output enabl e control pins can be selected a s
active high or active low. This flexibility not
only allows easy interface with most microprocessors, but also eliminates bus contention in
HT23C020
CMOS 256K×8-Bit Mask ROM
•
262144×8 bits of mask ROM
•
Mask option s: chip enab le CE/CE/OE1/OE1,
CE1/
CE1/OE2/OE2/NC and output enable
OE/
•
•
•
•
multiple bus mi cropro cessor syste ms. An add itional feature of the HT23C020 is its ability to
enter the standb y mode wh enever the chip enable (CE/
ducing current consumption to below 30
combination of these functions make the chip
suitable for high density low power memory
applications.
CE1/
VSSINegative power supply
VCCIPositive power supply
OE/NCIOutput enable input
OE/
NC—No connection
Operation Truth Table
ModeCE /CECE1/CE1OE/OEA0~A17D0~D7
ReadH/LH/LH/LValidData Out
DeselectH/LH/LL/HXHigh Z
StandbyL/HXXXHigh Z
StandbyXL/HXXHigh Z
Note: H=V
, L=VIL, X=VIH or V
IH
IL
221st Aug ’98
HT23C020
Absolu te Maximum Ra tin g s*
Supply Voltage.................................–0.3V to 6VStorage Temperature.................–50°C to 125°C
Input Voltage........................–0.3V to V
*Note: These are stress ra tings on ly. Stresses exceeding the range specified under “Abso lute Maxi -
mum Ratings” ma y cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme condition s may affect device reliability.
D.C. Characteristics
Supply voltage: 2.7V~3.6VTa=–40°C to 85°C
+0.3VOperating Temperature ..............–40°C to 85°C
Input High Voltage3V—2.0—V
Output Low Voltage3VIOL= 2.1mA——0.4V
Output High Voltage3VIOH= –0.4mA2.4—V
Input Leakage Current3VVIN= 0 to V
Output Leakage Current3VV
Standby Current3V
Standby Current3V
Input Capacitance (See note)—f= 1MHz——10pF
Output Capacitance (See note)—f = 1MHz——10pF
Test Conditions
V
CC
Conditions
O/P Unload,
f= 5MHz
= 0 to V
OUT
CE=V
IL
CE=V
IH
≤0.2V
CE
CE≥VCC-0.2V
CC
CC
Note: These parameters are periodically sampled but not 100% tested.
Input High Voltage5V—2.2—V
Output Low Voltage5VIOL= 3.2mA——0.4V
Output High Voltage5VIOH= –1mA2.4—V
Input Leakage Current5VVIN= 0 to V
Output Leakage Current5VV
Standby Current5V
Standby Current5V
Input Capacitance (See note)—f= 1MHz——10pF
Output Capacitance (See note)—f = 1MHz——10pF
Test Conditions
V
CC
Conditions
O/P Unload,
f= 5MHz
= 0 to V
OUT
CE=V
IL
CE=V
IH
≤0.2V
CE
CE≥VCC-0.2V
CC
Min.Typ.Max. Unit
——25mA
—0.8V
SS
——10µA
CC
——10µA
——1.5mA
——30
CC
CC
V
V
µA
Note: These parameters are periodically sampled but not 100% tested.
A.C. CharacteristicsTa=–40°C to 85°C
=2.7V~3.6VVCC=4.5V~5.5V
V
SymbolParameter
CC
Min.Max.Min.Max.
t
CYC
t
AA
t
ACE
t
AOE
t
OH
t
OD
t
OE
Cycle Time250—150—ns
Address Access Time—250—150ns
Chip Enable Access Time—250—150ns
Output Enable Access Time—150—80ns
Output Hold Time——10—ns
Output Disable Time (See Note)———70ns
Output Enable Time (See Note)——10—ns
Note: These parameters are periodically sampled but not 100% tested.
421st Aug ’98
Unit
A.C. test conditions
Output load: see figure right
Input rise and fall time: 10ns
Input pulse levels : 0.4V to 2.4V
Input and output timing reference levels:
0.8V and 2.0V (V
=5V), 1.5V (VCC=3V)
CC
Functional Description
The HT23C020 has two modes, namely data
read mode and standby mode, controlled by
CE/
CE/OE1/OE1,CE1/CE1/OE2/OE2/NC and
OE/
OE/NC inputs.
•
Standby mode
The HT23C020 has lower current consumption,
controlled by the chip enable input (CE/
CE1/
CE1). When a low/high level is applied to
the CE/
output enable (OE/
CE or CE1/CE1 input, regardless of the
OE/NC) states, the chip will
enter the standby mode.
CE and
HT23C020
Output load circuit
•
Data read mode
When both the chip enable (CE/
CE1/
CE1/OE2/OE2/NC) and the output en-
able (OE/
OE/NC) are active, the chip is in
data read mode. Otherwise, active CE/
CE1/
CE1 and inactive OE/OE/NC result in
deselect mode. The output will remain in Hi-Z
state.
CE/OE1/OE1,
CE,
Timing Diagrams
•
Propagation delay due to address (CE/CE/OE1/OE1, CE1/CE1/OE2/OE2
and OE/
•
Propagation delay due to chip and output enable (address valid)
OE are active)
521st Aug ’98
Characteristic Curves
HT23C020
621st Aug ’98
HT23C020
721st Aug ’98
HT23C020 MASK ROM ORDERING SHEET
Custom:
Input Medium:
EPROM DISK File (Mail Address: romfile@holtek.com.tw) OTHER
HT23C020
User No.Type/Ref. NameQ’tyCheck Sum
Control Pin and Package Form Option:
(a) 32 Pin Type Pin 22:
Pin 31:
Pin 24:
(b) Package Form:
Companion User No.
Package Marking :
Delivery Date : Q’ty: