Holtek Semiconductor Inc HT23C020 Datasheet
Features
•
Operating voltage 2.7V~5.5V
•
Low power consumption
–
Operation: 25mA max. (VCC=5V)
10mA max. (V
–
Standby: 30µA max. (VCC=5V)
10
•
Access time:150ns max. (VCC=5V)
µA max. (V
250ns max. (V
CC
CC
=3V)
CC
=3V)
=3V)
General Description
The HT23C020 is a read-only memory with
high performance CMOS storage device whose
2048K of memory is arranged into 262144
words by 8 bits.
For applica tion flexibility, the chip enable and
output enabl e control pins can be selected a s
active high or active low. This flexibility not
only allows easy interface with most microprocessors, but also eliminates bus contention in
HT23C020
CMOS 256K×8-Bit Mask ROM
•
262144×8 bits of mask ROM
•
Mask option s: chip enab le CE/CE/OE1/OE1,
CE1/
CE1/OE2/OE2/NC and output enable
OE/
•
•
•
•
multiple bus mi cropro cessor syste ms. An add itional feature of the HT23C020 is its ability to
enter the standb y mode wh enever the chip enable (CE/
ducing current consumption to below 30
combination of these functions make the chip
suitable for high density low power memory
applications.
OE/NC
TTL compatible inputs and outputs
Tristate outputs
Fully static operation
Package type: 32-pin DIP/SOP/PLCC
CE or CE1/CE1) is inactive, thus re-
µA. The
Block Diagram
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Pin Assignment
Pin Description
HT23C020
Pin Name I/O Description
A0~A17 I Address inputs
D0~D7 O Data outputs
CE/OE1/OE1 I Chip enable, output enable input
CE/
CE1/OE2/OE2/NC I Chip enable, output enable input
CE1/
VSS I Negative power supply
VCC I Positive power supply
OE/NC I Output enable input
OE/
NC — No connection
Operation Truth Table
Mode CE /CE CE1/CE1 OE/OE A0~A17 D0~D7
Read H/L H/L H/L Valid Data Out
Deselect H/L H/L L/H X High Z
Standby L/H X X X High Z
Standby X L/H X X High Z
Note: H=V
, L=VIL, X=VIH or V
IH
IL
2 21st Aug ’98
HT23C020
Absolu te Maximum Ra tin g s*
Supply Voltage.................................–0.3V to 6V Storage Temperature.................–50°C to 125°C
Input Voltage........................–0.3V to V
*Note: These are stress ra tings on ly. Stresses exceeding the range specified under “Abso lute Maxi -
mum Ratings” ma y cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme condition s may affect device reliability.
D.C. Characteristics
Supply voltage: 2.7V~3.6V Ta=–40°C to 85°C
+0.3V Operating Temperature ..............–40°C to 85°C
CC
Symbol Parameter
V
CC
I
CC
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
STB1
I
STB2
C
IN
C
OUT
Operating Voltage — — 2.7 — 3.6 V
Operating Current 3V
Input Low Voltage 3V — V
Input High Voltage 3V — 2.0 — V
Output Low Voltage 3V IOL= 2.1mA — — 0.4 V
Output High Voltage 3V IOH= –0.4mA 2.4 — V
Input Leakage Current 3V VIN= 0 to V
Output Leakage Current 3V V
Standby Current 3V
Standby Current 3V
Input Capacitance (See note) — f= 1MHz — — 10 pF
Output Capacitance (See note) — f = 1MHz — — 10 pF
Test Conditions
V
CC
Conditions
O/P Unload,
f= 5MHz
= 0 to V
OUT
CE=V
IL
CE=V
IH
≤0.2V
CE
CE≥VCC-0.2V
CC
CC
Note: These parameters are periodically sampled but not 100% tested.
Min. Typ. Max. Unit
——10mA
— 0.4 V
SS
V
CC
V
CC
——10µA
——10µA
——500µA
——10
µA
3 21st Aug ’98
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