HITACHI BB601M User Manual
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BB601M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
PG = 21.5 dB typ. at f = 900 MHz
• Low noise;
NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143mod)
ADE-208-702C (Z)
4th. Edition
Nov. 1998
Outline
Notes: 1. Marking is “AT–”.
2. BB601M is individual type number of HITACHI BBFET.
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
BB601M
G
G
G1S
G2S
S
G2S
S
G1S
S
G
S
G
G2S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate1 to source breakdown
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
Forward transfer admittance |yfs| 192429mSV
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
iss
oss
rss
Power gain PG 17 21.5 — dB VDS = 5V, VG1 = 5V
Noise figure NF — 1.85 2.4 dB f = 900MHz
6 ——V I
+6——V I
+6——V I
— — +100 nA V
— — +100 nA V
0.5 0.7 1.0 V V
0.5 0.7 1.0 V V
7 1013mAV
1.4 1.7 2.0 pF VDS = 5V, VG1 = 5V
0.7 1.1 1.5 pF V
— 0.019 0.04 pF f = 1MHz
6V
+6
V
– 0
+6
V
– 0
20 mA
= 200µA
D
V
= V
G1S
= +10µA
1
V
G2S
= +10µA
2
V
G1S
= 0
G2S
= VDS = 0
= VDS = 0
= +5V
V
= VDS = 0
G2S
= +5V
V
= VDS = 0
G1S
= 5V, V
D
I
= 100µA
D
= 5V, V
D
I
= 100µA
D
= 5V, V
D
V
= 4V, RG = 47kΩ
G2S
= 5V, V
D
V
=4V
R
= 47kΩ, f = 1kHz
G
=4V, RG = 47kΩ
G2S
=4V, RG = 47kΩ
V
G2S
= 4V
= 5V
= 5V
1
= 5V
1
2
Main Characteristics
BB601M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2 V
Gate 2
Drain
A
I
D
D(op)
Gate 1
Source
R
G
G1
Application Circuit
V = 4 to 0.3 V
AGC
BBFET
V = 5 V
DS
RFC
Output
Input
R
G
V = 5 V
GG
3
BB601M
900MHz Power Gain, Noise Test Circuit
Input
V
G1
R1
L1
L2
C1, C2
C3
C4 — C6
R1
R2
R3
D
R3
S
V
D
C6
RFC
L3
V
G2
C5C4
R2
C3
G2
G1
:
Variable Capacitor (10pF MAX)
:
Disk Capacitor (1000pF)
:
Air Capacitor (1000pF)
:
47 kΩ
:
47 kΩ
:
4.7 kΩ
Output
L4
C2C1
L1:
L2:
10
26
8
10
3
(φ1mm Copper wire)
3
Unit: mm
21
L3:
L4:
29
7
7
10
18
10
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
4
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