HITACHI BB601M User Manual

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BB601M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain;

PG = 21.5 dB typ. at f = 900 MHz

• Low noise;

NF = 1.85 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R(SOT-143mod)

ADE-208-702C (Z)

4th. Edition

Nov. 1998

Outline

Notes: 1. Marking is “AT–”.

2. BB601M is individual type number of HITACHI BBFET.

MPAK-4R

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

BB601M

G

G

G1S

G2S

S

G2S

S

G1S

S

G

S

G

G2S

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate1 to source voltage V

Gate2 to source voltage V

Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate1 to source breakdown

V

(BR)G1SS

voltage
Gate2 to source breakdown

V

(BR)G2SS

voltage
Gate1 to source cutoff current I

Gate2 to source cutoff current I

Gate1 to source cutoff voltage V

Gate2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

Forward transfer admittance |yfs| 192429mSV

Input capacitance c
Output capacitance c
Reverse transfer capacitance c

iss

oss

rss

Power gain PG 17 21.5 — dB VDS = 5V, VG1 = 5V

Noise figure NF — 1.85 2.4 dB f = 900MHz

6 ——V I

+6——V I

+6——V I

— — +100 nA V

— — +100 nA V

0.5 0.7 1.0 V V

0.5 0.7 1.0 V V

7 1013mAV

1.4 1.7 2.0 pF VDS = 5V, VG1 = 5V

0.7 1.1 1.5 pF V
— 0.019 0.04 pF f = 1MHz

6V
+6

V

– 0
+6

V

– 0
20 mA

= 200µA

D

V

= V

G1S

= +10µA

1

V

G2S

= +10µA

2

V

G1S

= 0

G2S

= VDS = 0

= VDS = 0
= +5V

V

= VDS = 0

G2S

= +5V

V

= VDS = 0

G1S

= 5V, V

D

I

= 100µA

D

= 5V, V

D

I

= 100µA

D

= 5V, V

D

V

= 4V, RG = 47kΩ

G2S

= 5V, V

D

V

=4V

R

= 47kΩ, f = 1kHz

G

=4V, RG = 47kΩ

G2S

=4V, RG = 47kΩ

V

G2S

= 4V

= 5V

= 5V

1

= 5V

1

2

Main Characteristics

BB601M

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2 V

Gate 2

Drain

A

I

D

D(op)

Gate 1

Source

R

G

G1

Application Circuit

V = 4 to 0.3 V

AGC

BBFET

V = 5 V

DS

RFC

Output

Input

R

G

V = 5 V

GG

3

BB601M

900MHz Power Gain, Noise Test Circuit

Input

V

G1

R1

L1

L2

C1, C2

C3

C4 — C6

R1
R2
R3

D

R3

S

V

D

C6

RFC

L3

V

G2

C5C4

R2

C3

G2

G1

:

Variable Capacitor (10pF MAX)

:

Disk Capacitor (1000pF)

:

Air Capacitor (1000pF)

:

47 kΩ

:

47 kΩ

:

4.7 kΩ

Output

L4

C2C1

L1:

L2:

10

26

8

10

3

(φ1mm Copper wire)

3

Unit: mm

21

L3:

L4:

29

7

7

10

18

10

RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm

4

BB601M

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

20

Typical Output Characteristics

V = 4 V

G2S

V = V

G1 DS

16

D

12

8

Drain Current I (mA)

4

0

12345

Drain to Source Voltage V (V)

Ω

27 k

G

R = 22 k

33 k

100 k

DS

Ω

39 k

47 k

56 k

68 k

82 k

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 33 kΩ

G

16

D

12

8

4

Drain Current I (mA)

0

12345

Gate1 Voltage V (V)

3 V

V = 1 V

G2S

G1

4 V

2 V

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 47 kΩ

G

16

D

12

8

Drain Current I (mA)

4

0

12345

Gate1 Voltage V (V)

4 V

3 V

V = 1 V

G2S

G1

2 V

5

BB601M

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

R = 68 kΩ

G

16

D

12

8

4

Drain Current I (mA)

0

12345

Gate1 Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

R = 47 kΩ

24

G

f = 1 kHz

fs

18

4 V

2 V

3 V

V = 1 V

G2S

G1

4 V

3 V

2 V

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

fs

24

R = 33 kΩ

G

f = 1 kHz

4 V

3 V

18

12

2 V

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

G2S

G1

Forward Transfer Admittance

vs. Gate1 Voltage

30

V = 5 V

DS

R = 68 kΩ

fs

24

18

G

f = 1 kHz

4 V

2 V

3 V

12

6

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

6

V = 1 V

G2S

G1

12

6

V = 1 V

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

G2S

G1

BB601M

Power Gain vs. Gate Resistance

30

25

20

15

V = V = 5 V

10

Power Gain PG (dB)

V = 4 V
f = 900 MHz

DS
G2S

G1

5

0

10

20 50

Gate Resistance R (k Ω )

Power Gain vs. Drain Current Noise Figure vs. Drain Current

30

G

100

Noise Figure vs. Gate Resistance

4

3

2

V = V = 5 V
V = 4 V

1

Noise Figure NF (dB)

0
10

f = 900 MHz

G1

DS
G2S

20 50

Gate Resistance R (k Ω )

4

100

G

25

20

15

V = V = 5 V

10

Power Gain PG (dB)

V = 4 V
R = variable

5

f = 900 MHz

0

0

G1

DS
G2S
G

5101520

Drain Current I (mA)

3

2

V = V = 5 V

1

Noise Figure NF (dB)

V = 4 V
R = variable

DS
G2S
G

G1

f = 900 MHz

0

0

D

5

Drain Current I (mA)

10

15 20

D

7

BB601M

20

Drain Current vs. Gate Resistance

Power Gain vs.

Gate2 to Source Voltage

25

15

D

10

V = V = 5 V

5

0

10

V = 4 V

Drain Current I (mA)

G1

DS
G2S

20 50

Gate Resistance R (k Ω )

Noise Figure vs.

Gate2 to Source Voltage

5

4

G

V = 5 V

DS

R = 47 kΩ

G

f = 900 MHz

100

20

15

10

Power Gain PG (dB)

5

0

1

23

Gate2 to Source Voltage V (V)

Input Capacitance vs.

Gate2 to Source Voltage

4

3

V = 5 V

DS

R = 47 kΩ

G

f = 900 MHz

G2S

4

3

2

Noise Figure NF (dB)

1

1

Gate2 to Source Voltage V (V)

8

23

G2S

2

1

V = 5 V

DS

R = 47 kΩ

Input Capacitance Ciss (pF)

4

G

f = 1 MHz

0

0

1

Gate2 to Source Voltage V (V)

2

34

G2S

Gain Reduction vs.

0

10

20

30

Gain Reduction GR (dB)

40

Gate2 to Source Voltage

V = V = 5 V

DS

V = 4 V

G2S

R = 47 kΩ

G

G1

BB601M

50

4

3

Gate2 to Source Voltage V (V)

2

10

G2S

9

BB601M

S11 Parameter vs. Frequency

.8

.6

.4

.2

0

–.2

.2

–.4

Test Condition:

.6

.4

.8

–.6

–.8

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

50 — 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

120°

150°

180°

–150°

–120°

Test Condition:

50 — 1000 MHz (50 MHz step)

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

1

–1

90°

–90°

1.5

1.5

234

1

–1.5

G1

G

Ω

Scale: 0.002 / div.

G1

G

Ω

60°

–60°

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

150°

180°

–150°

Test Condition:

Ω

120°

–120°

–90°

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

Ω

G1

–60°

G

60°

30°

0°

–30°

Ω

50 — 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

.8

.6

.4

30°

0°

–30°

Ω

.2

0

–.2

.2

–.4

–.6

Test Condition:

.6

.4

.8

–.8

–1

V = 5 V , V = 5 V

DS

V = 4 V , R = 47 k ,

G2S

Zo = 50

50 — 1000 MHz (50 MHz step)

1.5
2

3

4

5

10

1.5

234

1

–1.5

G1

G

Ω

10

5

–10

–5

–4

–3

–2

Ω

10

BB601M

Sparameter (VDS = VG1 = 5V, V

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
50 0.974 –2.8 2.40 176.4 0.00057 78.1 0.997 –2.0
100 0.974 –10.0 2.38 172.2 0.00144 82.4 0.998 –4.2
150 0.974 –13.6 2.38 168.4 0.00211 78.7 0.997 –6.0
200 0.965 –16.5 2.37 164.1 0.00316 84.8 0.995 –8.1
250 0.963 –20.0 2.35 160.4 0.00358 76.3 0.994 –10.2
300 0.953 –23.7 2.32 156.8 0.00431 84.0 0.992 –12.2
350 0.947 –26.8 2.30 152.9 0.00503 79.0 0.990 –14.2
400 0.942 –29.6 2.28 148.6 0.00545 76.6 0.987 –16.2
450 0.929 –32.8 2.26 144.9 0.00630 80.3 0.984 –18.1
500 0.923 –35.4 2.21 141.2 0.00646 76.1 0.981 –20.2
550 0.912 –38.5 2.19 137.6 0.00693 73.7 0.977 –22.1
600 0.903 –41.2 2.15 134.2 0.00732 72.9 0.974 –24.1
650 0.886 –44.2 2.12 130.6 0.00729 74.6 0.971 –26.0
700 0.879 –46.8 2.08 127.4 0.00733 72.0 0.967 –27.8
750 0.873 –49.2 2.06 124.3 0.00762 74.5 0.962 –29.7
800 0.859 –52.4 2.03 120.8 0.00756 73.7 0.959 –31.7
850 0.846 –55.4 2.00 117.3 0.00772 75.5 0.955 –33.6
900 0.836 –58.0 1.96 114.3 0.00775 79.6 0.951 –35.5
950 0.827 –60.4 1.93 111.0 0.00801 81.7 0.946 –37.3
1000 0.815 –62.8 1.89 108.0 0.00704 81.0 0.942 –39.4

= 4V, RG = 47kΩ, Zo = 50Ω)

G2S

11

BB601M

Package Dimensions

2.95

1.9

0.95 0.95

4

0.4

+ 0.1
– 0.05

±0.2

±0.2

Unit: mm

± 0.1

+ 0.1

0.4

– 0.05

0.65

3

0.16

+ 0.1
– 0.06

0.6

+ 0.1
– 0.05

± 0.2

± 0.15

2.8

1.5

1.8

2

0.95

0.4

+ 0.1
– 0.05

± 0.1

0.65

1

0.85

0—0.1

0.8

± 0.1

1.1

Hitachi Code

EIAJ

JEDEC

MPAK–4R

—
—

12

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

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(America) Inc.
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San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

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Japan : http://www.hitachi.co.jp/Sicd/indx.htm

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Germany
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Tel: <44> (1628) 585000
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Tel: [phone]
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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