HITACHI BB403M User Manual

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Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High forward transfer admittance;

(|yfs| = 42 mS typ. at f = 1 kHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R (SOT-143 var.)

BB403M

Build in Biasing Circuit MOS FET IC

VHF/UHF RF Amplifier

ADE-208-699A (Z)

2nd. Edition

Nov. 1998

Outline

Notes: 1. Marking is “CX–”.

2. BB403M is individual type number of HITACHI BBFET.

MPAK-4R

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

BB403M

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

Gate1 to source breakdown

(BR)DSS

V

(BR)G1SS

voltage
Gate2 to source breakdown

V

(BR)G2SS

voltage
Gate1 to source cutoff current I

Gate2 to source cutoff current I

Gate1 to source cutoff voltage V

Gate2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

Forward transfer admittance |yfs| 354250mSV

Input capacitance c
Output capacitance c
Reverse transfer capacitance c

iss

oss

rss

Power gain PG1 28 32 — dB VDS = 5V, VG1 = 5V

Noise figure NF1 — 1.0 1.6 dB f = 200MHz
Power gain PG2 12 16.5 — dB VDS = 5V, VG1 = 5V

Noise figure NF2 — 2.85 3.7 dB f = 900MHz

7 ——V I

+7——V I

+7——V I

— — +100 nA V

— — +100 nA V

0.3 0.6 0.9 V VDS = 5V, V

0.5 0.8 1.1 V VDS = 5V, V

9 1420mAV

2.6 3.3 4.0 pF VDS = 5V, VG1 = 5V

1.7 2.1 2.5 pF V
— 0.025 0.05 pF f = 1MHz

7V
– 0/ +7 V
– 0/ +7 V
25 mA

= 200µA

D

V

= V

G1S

= +10µA

G1

V

G2S

= +10µA

G2

V

G1S

G1S

V

G2S

G2S

V

G1S

I

= 100µA

D

I

= 100µA

D

DS

V

G2S

DS

V

G2S

R

= 470kΩ, f = 1kHz

G

G2S

V

G2S

V

G2S

= 0

G2S

= VDS = 0

= VDS = 0
= +5V

= VDS = 0
= +5V

= VDS = 0

= 4V

G2S

= 5V

G1S

= 5V, VG1 = 5V

= 4V, RG = 470kΩ

= 5V, VG1 = 5V

=4V

=4V, RG = 470kΩ

=4V, RG = 470kΩ

=4V, RG = 470kΩ

2

Main Characteristics

BB403M

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2

Gate 2

Drain

A

I

D

Power Gain, Noise Figure Test Circuit

V

G2

1000p

1000p

V

T

D(op)

Gate 1

Source

R

G

V

G1

V

T

1000p

Input(50Ω)

1000p

36p

BBFET

L2

470k

1000p

1000p

47k

R

G

1000p

47k

L1

1SV70

L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

1000p

RFC

V = V

D G1

47k

10p max

1SV70

Unit Resistance (Ω)
Capacitance (F)

Output(50Ω)

3

BB403M

900MHz Power Gain, Noise Test Circuit

Input

V

G1

R1

L1

L2

C1, C2

C4 to C6

V

G2

C5C4

R2

C3

G2

G1

:

Variable Capacitor (10pF MAX)

:

Disk Capacitor (1000pF)

C3

:

Air Capacitor (1000pF)

:

470 kΩ

R1

:

47 kΩ

R2

:

4.7 kΩ

R3

V

R3

D

S

D

C6

RFC

Output

L4

L3

C2C1

L1:

L2:

10

26

18

10

(φ1mm Copper wire)

3

Unit : mm

L3:

8

3

10

25

L4:

29

7

7

10

RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm

4

BB403M

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Drain Current vs.

25

Drain to Source Voltage

V = 4 V

G2S

1.5 V

1.4 V

20

1.3 V

D

15

1.2 V

10

1.1 V

25

Typical Output Characteristics

V = 4 V

G2S

V = V

G1 DS

20

D

15

10

Drain Current I (mA)

5

1 M

0

12345

Drain to Source Voltage V (V)

Drain Current vs.

Gate1 to Source Voltage

25

V = 5 V

DS

20

D

15

3.5 V
3 V

10

G

R = 180 k

820 k

Ω

4 V

Ω

220 k

Ω

Ω

270 k

680 k

1.5 M

2.2 M

DS

2.5 V

1.5 V

Ω

330 k

390 k

470 k

560 k

2 V

Ω

Ω

Ω

Ω

Ω

Ω

Ω

Drain Current I (mA)

5

0

12345

Drain to Source Voltage V (V)

1.0 V

V = 0.9 V

G1S

DS

5

Drain Current I (mA)

0

4.0 8.0 1.2 1.6 2.0

Gate1 to Source Voltage V (V)

V = 1 V

G2S

G1S

5

BB403M

20

V = 5 V

DS

R = 470 k

G

16

D

12

8

Drain Current I (mA)

4

Drain Current vs.

Gate2 to Source Voltage

Ω

G1

V = 5 V

4.5 V

3.5 V

4 V

3 V

Drain Current vs. Gate1 Voltage

20

V = 5 V

DS

V = 4 V

G2S

16

D

12

R = 470 k

G

Ω

8

4

Drain Current I (mA)

0

12345

Gate2 to Source Voltage V (V)

Drain Current vs. Gate1 Current

25

20

D

15

10

Drain Current I (mA)

5

0

10 20 30 40 50

Gate1 Current I (µA)

G1

G2S

V = 5 V

DS

V = 4 V

G2S

Gate1 Current I (µA)

0

12345

Gate1 Voltage V (V)

Gate1 Current vs.

50

Gate1 to Source Voltage

V = 5 V

DS

40

G1

30

20

10

0

0.4 0.8 1.2 1.6 2.0

Gate1 to Source Voltage V (V)

G1

1.5 V

V = 1 V

G2S

G1S

4 V

2 V

3.5 V
3 V

2.5 V

6

BB403M

Gate1 Current vs.

Gate2 to Source Voltage

10

V = 5 V

G1

8

6

DS

R = 470 k

G

Ω

4

2

Gate1 Current I (µA)

0

1.0 2.0 3.0 4.0 5.0

Gate2 to Source Voltage V (V)

Forward Transfer Admittance

vs. Gate1 Voltage

50

V = 5 V

fs

40

DS

R = 470 k

G

Ω

V = 5 V

G1

4.5 V
4 V

3.5 V

3 V

2.5 V

2 V

G2S

V = 4 V

G2S

Forward Transfer Admittance

50

fs

40

V = 5 V

DS

vs. Drain Current

3.5 V

4 V

2.5 V

30

20

10

Forward Transfer Admittance |y | (mS)

0

510152025
Drain Current I (mA)

V = 2 V

G2S

D

Power Gain vs. Gate Resistance

40

35

3 V

30

3 V

2 V

20

10

Forward Transfer Admittance |y | (mS)

0

12345

Gate1 Voltage V (V)

1 V

G1

30

25

20

V = 5 V

15

10

DS

V = 5 V

G1

V = 4 V

G2S

f = 200 MHz

Power Gain PG (dB)

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M )

G

Ω

7

BB403M

Noise Figure vs. Gate Resistance

4

V = 5 V

DS

V = 5 V

G1

V = 4 V

3

G2S

f = 200 MHz

2

1

Noise Figure NF (dB)

0

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M W )

G

Noise Figure vs. Drain Current

4

V = 5 V

DS

V = 5 V

G1

V = 4 V

3

G2S

R = variable

G

f = 200 MHz

40

Power Gain vs. Drain Current

35

30

25

V = 5 V

20

Power Gain PG (dB)

15

10

DS

V = 5 V

G1

V = 4 V

G2S

R = variable

G

f = 200 MHz

0

510152025

Drain Current I (mA)

Power Gain vs. Gate Resistance

20

15

30

D

2

1

Noise Figure NF (dB)

0

8

510152025

Drain Current I (mA)

D

30

10

V = 5 V

5

Power Gain PG (dB)

DS

V = 5 V

G1

V = 4 V

G2S

f = 900 MHz

0

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M W )

G

BB403M

Noise Figure vs. Gate Resistance

4

3

2

V = 5 V

1

Noise Figure NF (dB)

DS

V = 5 V

G1

V = 4 V

G2S

f = 900 MHz

0

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M W )

G

Noise Figure vs. Drain Current

4

3

20

Power Gain vs. Drain Current

15

10

5

Power Gain PG (dB)

0

510152025

Drain Current I (mA)

Gain Reduction vs.

Gate2 to Source Voltage

60

50

40

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

R = variable

G

f = 900 MHz

D

V = V = 5 V
V = 4 V
R = 470 k

DS
G2S
G

G1

W

f = 200 MHz

30

2

1

Noise Figure NF (dB)

0

510152025

Drain Current I (mA)

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

R = variable

G

f = 900 MHz

D

30

30

20

Gain Reduction GR (dB)

10

0

0123

Gate2 to Source Voltage V (V)

4

G2S

5

9

BB403M

Gain Reduction vs.

Gate2 to Source Voltage

50

V = V = 5 V

DS

V = 4 V

40

G2S

R = 470 k

G

f = 900 MHz

30

20

Gain Reduction GR (dB)

10

0

12345

Gate2 to Source Voltage V (V)

Input Capacitance vs.

Gate2 to Source Voltage

4

G1

W

G2S

Drain Current vs. Gate Resistance

35

V = 5 V

30

DS

V = 5 V

G1

V = 4 V

G2S

25

D

20

15

10

Drain Current I (mA)

5
0

0.1 0.2 0.5 1 2 5 10
Gate Resistance R (M )

G

W

3

2

1

Input Capacitance Ciss (pF)

0

1234

Gate2 to Source Voltage V (V)

V = 5 V

DS

V = 5 V

G1

V = 4 V

G2S

R = 470 k

G

f = 1 MHz

G2S

W

10

BB403M

S11 Parameter vs. Frequency

1

.6

.4

.2

0

–.2

.2

–.4

–.6

Test Condition :

.8

.6

.4

.8

–.8

–1

V = 5 V , V = 5 V

DS

V = 4 V , R = 470 k

G2S

Zo =50

1.5
2

3

4

5

10

1.5

234

1

–1.5

G1

G

Ω

10

5

–10

–5

–4

–3

–2

Ω

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.002 / div.

90°

120°

150°

180°

–150°

–120°

Test Condition : Test Condition :

–90°

V = 5 V , V = 5 V

DS

V = 4 V , R = 470 k

G2S

Ω

Zo =50

50 to 1000 MHz (50 MHz step)

G1

G

60°

30°

0°

–30°

–60°

Ω

S21 Parameter vs. Frequency

150°

180°

–150°

–120°

Test Condition :

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

.4

.2

0

–.2

–.4

50 to 1000 MHz (50 MHz step)

90°

120°

–90°

V = 5 V , V = 5 V

DS

V = 4 V , R = 470 k

G2S

Ω

Zo =50

1

.8

.6

.2

.6

.4

–.6

1

.8

–.8

–1

V = 5 V , V = 5 V

DS

V = 4 V , R = 470 k

G2S

Ω

Zo =50

Scale: 1 / div.

60°

–60°

G1

G

1.5

1.5

234

–1.5

G1

G

30°

0°

–30°

Ω

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

Ω

11

BB403M

Sparameter (VDS = VG1 = 5V, V

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
50 0.947 –7.0 4.11 174.4 0.00400 89.0 0.985 –3.1
100 0.978 –11.9 4.13 167.1 0.00305 116.5 0.985 –6.8
150 0.973 –18.7 4.04 159.8 0.00266 75.5 0.982 –10.1
200 0.960 –23.8 4.01 152.7 0.00384 66.8 0.978 –13.5
250 0.956 –29.6 3.90 146.4 0.00453 70.1 0.970 –16.8
300 0.939 –35.5 3.85 139.9 0.00440 59.6 0.965 –20.0
350 0.930 –40.3 3.68 133.6 0.00550 67.2 0.957 –23.1
400 0.905 –45.7 3.63 128.3 0.00571 59.0 0.949 –26.2
450 0.889 –50.3 3.45 122.7 0.00583 54.2 0.940 –29.2
500 0.870 –55.6 3.35 116.6 0.00634 51.6 0.932 –32.1
550 0.855 –59.6 3.22 111.5 0.00596 56.2 0.924 –35.0
600 0.841 –63.9 3.10 106.3 0.00591 55.7 0.917 –37.7
650 0.826 –67.9 3.02 101.4 0.00544 54.9 0.908 –40.5
700 0.812 –71.8 2.89 96.1 0.00533 57.2 0.900 –43.1
750 0.799 –75.6 2.78 91.8 0.00495 64.6 0.893 –45.7
800 0.788 –78.9 2.70 87.5 0.00470 66.5 0.887 –48.1
850 0.778 –82.6 2.60 82.2 0.00460 75.1 0.880 –50.6
900 0.765 –85.8 2.48 78.1 0.00445 83.8 0.874 –52.9
950 0.763 –88.8 2.41 74.2 0.00486 97.0 0.869 –55.3
1000 0.748 –92.2 2.34 69.7 0.00502 102.6 0.864 –57.5

= 4V, RG = 470kΩ, Zo = 50Ω)

G2S

12

Package Dimensions

2.95

0.95 0.95

4

0.4

+ 0.1
– 0.05

1.9

±0.2

±0.2

BB403M

Unit: mm

± 0.1

+ 0.1

0.4

– 0.05

0.65

3

0.16

+ 0.1
– 0.06

0.6

+ 0.1
– 0.05

± 0.2

± 0.15

2.8

1.5

1.8

2

0.95

0.4

+ 0.1
– 0.05

± 0.1

0.65

1

0.85

0 ~ 0.1

0.8

± 0.1

1.1

Hitachi Code

EIAJ

JEDEC

MPAK–4R

—
—

13

BB403M

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,

trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact

Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for

maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> [phone]
Fax: <1> [phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

14

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX