HITACHI BB403M User Manual
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Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R (SOT-143 var.)
BB403M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-699A (Z)
2nd. Edition
Nov. 1998
Outline
Notes: 1. Marking is “CX–”.
2. BB403M is individual type number of HITACHI BBFET.
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
BB403M
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate1 to source breakdown
(BR)DSS
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
Forward transfer admittance |yfs| 354250mSV
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
iss
oss
rss
Power gain PG1 28 32 — dB VDS = 5V, VG1 = 5V
Noise figure NF1 — 1.0 1.6 dB f = 200MHz
Power gain PG2 12 16.5 — dB VDS = 5V, VG1 = 5V
Noise figure NF2 — 2.85 3.7 dB f = 900MHz
7 ——V I
+7——V I
+7——V I
— — +100 nA V
— — +100 nA V
0.3 0.6 0.9 V VDS = 5V, V
0.5 0.8 1.1 V VDS = 5V, V
9 1420mAV
2.6 3.3 4.0 pF VDS = 5V, VG1 = 5V
1.7 2.1 2.5 pF V
— 0.025 0.05 pF f = 1MHz
7V
– 0/ +7 V
– 0/ +7 V
25 mA
= 200µA
D
V
= V
G1S
= +10µA
G1
V
G2S
= +10µA
G2
V
G1S
G1S
V
G2S
G2S
V
G1S
I
= 100µA
D
I
= 100µA
D
DS
V
G2S
DS
V
G2S
R
= 470kΩ, f = 1kHz
G
G2S
V
G2S
V
G2S
= 0
G2S
= VDS = 0
= VDS = 0
= +5V
= VDS = 0
= +5V
= VDS = 0
= 4V
G2S
= 5V
G1S
= 5V, VG1 = 5V
= 4V, RG = 470kΩ
= 5V, VG1 = 5V
=4V
=4V, RG = 470kΩ
=4V, RG = 470kΩ
=4V, RG = 470kΩ
2
Main Characteristics
BB403M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Drain
A
I
D
Power Gain, Noise Figure Test Circuit
V
G2
1000p
1000p
V
T
D(op)
Gate 1
Source
R
G
V
G1
V
T
1000p
Input(50Ω)
1000p
36p
BBFET
L2
470k
1000p
1000p
47k
R
G
1000p
47k
L1
1SV70
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
1000p
RFC
V = V
D G1
47k
10p max
1SV70
Unit Resistance (Ω)
Capacitance (F)
Output(50Ω)
3
BB403M
900MHz Power Gain, Noise Test Circuit
Input
V
G1
R1
L1
L2
C1, C2
C4 to C6
V
G2
C5C4
R2
C3
G2
G1
:
Variable Capacitor (10pF MAX)
:
Disk Capacitor (1000pF)
C3
:
Air Capacitor (1000pF)
:
470 kΩ
R1
:
47 kΩ
R2
:
4.7 kΩ
R3
V
R3
D
S
D
C6
RFC
Output
L4
L3
C2C1
L1:
L2:
10
26
18
10
(φ1mm Copper wire)
3
Unit : mm
L3:
8
3
10
25
L4:
29
7
7
10
RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm
4
BB403M
Maximum Channel Power
Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Drain Current vs.
25
Drain to Source Voltage
V = 4 V
G2S
1.5 V
1.4 V
20
1.3 V
D
15
1.2 V
10
1.1 V
25
Typical Output Characteristics
V = 4 V
G2S
V = V
G1 DS
20
D
15
10
Drain Current I (mA)
5
1 M
0
12345
Drain to Source Voltage V (V)
Drain Current vs.
Gate1 to Source Voltage
25
V = 5 V
DS
20
D
15
3.5 V
3 V
10
G
R = 180 k
820 k
Ω
4 V
Ω
220 k
Ω
Ω
270 k
680 k
1.5 M
2.2 M
DS
2.5 V
1.5 V
Ω
330 k
390 k
470 k
560 k
2 V
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Drain Current I (mA)
5
0
12345
Drain to Source Voltage V (V)
1.0 V
V = 0.9 V
G1S
DS
5
Drain Current I (mA)
0
4.0 8.0 1.2 1.6 2.0
Gate1 to Source Voltage V (V)
V = 1 V
G2S
G1S
5
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