HITACHI 1SS286 User Manual
1SS286
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-302A (Z)
Rev. 1
Sep. 1995
Features
• Very low reverse current.
• Detection efficiency is very good.
• Small glass package (MHD) enables easy moun ting and high reliability.
Ordering Information
Type No. Cathode band Mark Package Code
1SS286 Green 7 MHD
Outline
1
2
Cathode band
1. Cathode
2. Anode
7
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1SS286
Rev.1, Sep. 1995, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
R
25 V
Forward current I
F
35 mA
Power dissipation Pd 150 mW
Junction temperature Tj 100 °C
Storage temperature Tstg –55 to +100 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
F
——0.6V I
F
= 10mA
Reverse voltage V
R
25 — — V I
R
= 10µA
Reverse current I
R
— — 10 nA V
R
= 10V
Capacitance C — — 1.2 pF V
R
= 0V, f = 1MHz
Capacitance deviation ∆C——0.1pFV
R
= 0V, f = 1MHz
Forward voltage
deviation
∆V
F
——10mVI
F
= 10mA
ESD-Capability — 10 — — V *
1
C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion; I
R
≥ 20µA
2. Each group shall unify a multiple of 4 diodes
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