HITACHI 1SS286 User Manual

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Features

• Very low reverse current.

• Detection efficiency is very good.

• Small glass package (MHD) enables easy moun ting and high reliability.

1SS286

Silicon Schottky Barrier Diode for Various Detector,

High Speed Switching

ADE-208-302A (Z)

Rev. 1

Sep. 1995

Ordering Information

Type No. Cathode band Mark Package Code

1SS286 Green 7 MHD

Outline

7

1

Cathode band

2

1. Cathode

2. Anode

1SS286

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Forward current I

R

F

Power dissipation Pd 150 mW
Junction temperature Tj 100 °C
Storage temperature Tstg –55 to +100 °C

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse voltage V
Reverse current I

F

R

R

Capacitance C — — 1.2 pF VR = 0V, f = 1MHz
Capacitance deviation ∆C——0.1pFV
Forward voltage

∆V

F

deviation
ESD-Capability — 10 — — V *1C = 200pF, Both forward and

Notes: 1. Failure criterion; IR ≥ 20µA

2. Each group shall unify a multiple of 4 diodes

——0.6V I
25 — — V IR = 10µA
— — 10 nA VR= 10V

——10mVI

25 V
35 mA

= 10mA

F

= 0V, f = 1MHz

R

= 10mA

F

reverse direction 1 pulse.

Rev.1, Sep. 1995, page 2 of 6