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查询1SS286供应商
Features
• Very low reverse current.
• Detection efficiency is very good.
• Small glass package (MHD) enables easy moun ting and high reliability.
1SS286
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-302A (Z)
Rev. 1
Sep. 1995
Ordering Information
Type No. Cathode band Mark Package Code
1SS286 Green 7 MHD
Outline
7
1
Cathode band
2
1. Cathode
2. Anode
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1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Forward current I
R
F
Power dissipation Pd 150 mW
Junction temperature Tj 100 °C
Storage temperature Tstg –55 to +100 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Capacitance C — — 1.2 pF VR = 0V, f = 1MHz
Capacitance deviation ∆C——0.1pFV
Forward voltage
∆V
F
deviation
ESD-Capability — 10 — — V *1C = 200pF, Both forward and
Notes: 1. Failure criterion; IR ≥ 20µA
2. Each group shall unify a multiple of 4 diodes
——0.6V I
25 — — V IR = 10µA
— — 10 nA VR= 10V
——10mVI
25 V
35 mA
= 10mA
F
= 0V, f = 1MHz
R
= 10mA
F
reverse direction 1 pulse.
Rev.1, Sep. 1995, page 2 of 6
Page 3
–1
10
–2
10
–3
10
F
–4
10
–5
10
–6
10
Forward current I (A)
–7
10
–8
10
–9
10
0 0.2 0.4
0.6 0.8
1SS286
1.0
Forward voltage V (V)
F
Fig.1 Forward current Vs. Forward voltage
–6
10
–7
10
R
–8
10
Reverse current I (A)
–9
10
–10
10
0
5
10
15
Reverse voltage V (V)
20
R
25
Fig.2 Reverse current Vs. Reverse voltage
Rev.1, Sep. 1995, page 3 of 6
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1SS286
1.0
f = 1MHz
–1
10
Capacitance C (pF)
–2
10
1.0
Reverse voltage V (V)
R
Fig.3 Capacitance Vs. Reverse voltage
4010
Rev.1, Sep. 1995, page 4 of 6
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Package Dimensions
1SS286
Unit: mm
26.0 Min
2.4 Max
26.0 Min
2.0
φ
Max
7
12
0.4
φ
Cathode band (Green)
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
12Cathode
Anode
MHD
DO-34
—
0.084
Rev.1, Sep. 1995, page 5 of 6
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1SS286
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, in cluding
intellectual property rights, in connection with u se of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltag e r ange , heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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7/F., North Tower
World Finance Centre,
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Colophon 4.0
Rev.1, Sep. 1995, page 6 of 6
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