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Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
Features
• Low forward resistance. (rf = 0.5Ω max)
• Ultra small glass package (UMD) enables easy mounting and high reliability.
1SS277
ADE-208-301A(Z)
Rev 1
March 1996
Ordering Information
Type No. Cathode band 2nd band Package Code
1SS277 Verdure Blue UMD
Outline
1
2nd band
Cathode band
2
1. Cathode
2. Anode

1SS277
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage VR 35 V
Forward current IF 100 mA
Power dissipation Pd 100 mW
Operation temperature Topr -20Å`+60 °C
Storage temperature Tstg -55Å`+150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage VR 35 Å\ Å\ V IR = 10µA
Forward voltage VF Å\ Å\ 1.0 V IF = 10 mA
Reverse current IR Å\ Å\ 10 nA VR = 25V
Capacitance C Å\ Å\ 1.2 pF VR = 6V, f = 1 MHz
Forward resistance rf Å\ Å\ 0.5 Ω IF = 2 mA, f = 100 MHz

Main Characteristic
1SS277
-2
10
-4
10
F
-6
10
-8
10
Forward current I (A)
-10
10
-12
10
0 0.2 0.4
Forward voltage V (V)
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
10
f=1MHz
1.0
-9
10
-10
10
R
-11
10
Reverse current I (A)
-12
10
-13
10
0
10
Reverse voltage V (V)
3020
R
Fig.2 Reverse current Vs. Reverse voltage
2
10
f=100MHz
40
50
1.0
Capacitance C (pF)
-1
10
1.0
10
Reverse voltage V (V)
Fig.3 Capacitance Vs. Reverse voltage
10
f
1.0
-1
Forward resistance r (Ω)
10
-2
10
40
R
10
-4
-3
10
Forward current I (A)
10
F
-2
10
-1
Fig.4 Forward resistance Vs. Forward current

1SS277
Main Characteristic
I =2mA
F
10
f
1.0
Forward resistance r (Ω)
-1
10
1.0
10
Frequency f (MHz)
10
2
Fig.5 Forward resistance Vs. Frequency