HITACHI 1SS199 User Manual
1SS199
1SS199
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-299A (Z)
Rev. 1
Features
•Detection efficiency is very good.
•Small temperature coefficient.
•Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. |
Cathode band |
Mark |
Package Code |
1SS199 |
Green |
3 |
MHD |
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Outline
1 |
3 |
2 |
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Cathode band |
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1. |
Cathode |
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2. |
Anode |
1SS199
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
30 |
V |
Average rectified current |
IO |
15 |
mA |
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Junction temperature |
Tj |
125 |
°C |
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Storage temperature |
Tstg |
–55 to +125 |
°C |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
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Max |
Unit |
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Test Condition |
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Forward current |
IF |
3.0 |
— |
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mA |
V |
F = 1V |
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Reverse current |
IR |
— |
— |
100 |
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µA |
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VR = 10V |
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Capacitance |
C |
— |
— |
3.0 |
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pF |
V |
R = 1V, f = 1MHz |
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Rectifier efficiency |
η |
70 |
— |
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— |
% |
Vin = 2Vrms, f = 40MHz, R L = 5kΩ, CL |
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= 20pF |
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ESD-Capability |
— |
70 |
— |
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— |
V |
*C = 200pF, Both forward and |
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reverse direction 1 pulse. |
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Note: Failure criterion; IR ≥ 200µA at VR = 10V |
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