HITACHI 1SS120 User Manual
查询1SS120供应商
Silicon Epitaxial Planar Diode for High Speed Switching
Features
• Low capacitance. (C = 3.0pF max)
• Short reverse recovery time. (trr = 3.5ns max)
• Small glass package (MHD) enables easy mounting and high reliability.
1SS120
ADE-208-167B (Z)
Rev. 2
Aug. 1995
Ordering Information
Type No. Cathode band Mark Package Code
1SS120 Light Blue 1 MHD
Outline
1
1
Cathode band
2
1. Cathode
2. Anode
1SS120
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I
RM
R
FM
*1 A
FSM
O
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — — 3.0 pF VR = 1V, f = 1MHz
Reverse recovery time trr* — — 3.5 ns IF = 10mA, VR = 6V, RL = 50Ω
Note: Reverse recovery time test circuit
Ro = 50Ω
— — 0.8 V IF = 10mA
— — 0.1 µAVR = 60V
DC
Supply
Pulse
Generator
0.1µF
3kΩ
Trigger
70 V
60 V
450 mA
150 mA
Sampling
Oscilloscope
Rin = 50Ω
2
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