HITACHI 1SS118 User Manual
1SS118
1SS118
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-297 (Z)
Rev. 0
Features
•High average forward current. (IO = 200mA)
•High reliability with glass seal.
Ordering Information
Type No. |
Cathode band |
Mark |
Package Code |
1SS118 |
Black |
S118 |
DO-35 |
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Outline
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S1 |
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1 |
18 |
2 |
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Type No.
Cathode band
1. Cathode
2. Anode
1SS118
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Value |
Unit |
Peak reverse voltage |
VRM |
75 |
V |
Reverse voltage |
VR |
50 |
V |
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Peak forward current |
IFM |
600 |
mA |
Non-Repetitive peak forward surge current |
IFSM* |
4 |
A |
Average forward current |
IO |
200 |
mA |
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Power dissipation |
Pd |
500 |
mW |
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Junction temperature |
Tj |
175 |
°C |
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Storage temperature |
Tstg |
–65 to +175 |
°C |
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Note: Value at duration of 1µs |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
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Max |
Unit |
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Test Condition |
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Forward voltage |
VF |
— |
— |
1.0 |
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V |
I |
F = 10mA |
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Reverse current |
IR |
— |
— |
0.1 |
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µA |
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VR = 50V |
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Capacitance |
C |
— |
— |
3.5 |
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pF |
V |
R = 0V, f = 1MHz |
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Reverse recovery time |
trr |
— |
— |
3.0 |
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ns |
I |
F = 10mA, VR = 6V, Irr = 0.1IR, |
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RL = 50Ω |
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