HITACHI 1SS118 User Manual
查询1SS118供应商
Silicon Epitaxial Planar Diode for High Speed Switching
Features
• High average forward current. (IO = 200mA)
• High reliability with glass seal.
1SS118
ADE-208-297 (Z)
Rev. 0
Ordering Information
Type No. Cathode band Mark Package Code
1SS118 Black S118 DO-35
Outline
S1
1
18
Type No.
Cathode band
1. Cathode
2. Anode
2
1SS118
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I
RM
R
FM
*4 A
FSM
O
Power dissipation Pd 500 mW
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C
Note: Value at duration of 1µs
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — — 3.5 pF VR = 0V, f = 1MHz
Reverse recovery time t
rr
— — 1.0 V IF = 10mA
— — 0.1 µAVR = 50V
— — 3.0 ns IF = 10mA, VR = 6V, Irr = 0.1IR,
75 V
50 V
600 mA
200 mA
R
= 50Ω
L
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