HITACHI 1SS108 User Manual
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Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
1SS108
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-154A (Z)
Rev. 1
Ordering Information
Type No. Cathode 2nd band Mark Package Code
1SS108 White Black H DO-35
Outline
1
H
2nd band
Cathode band
1. Cathode
2. Anode
2
1SS108
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward current I
Reverse current I
F
R
Capacitance C — — 3.0 pF VR = 1V, f = 1MHz
Rectifier efficiency η 70 — — % Vin = 2Vrms, f = 40MHz, RL = 5kΩ, C
ESD-Capability — 70 — — V *C = 200pF, Both forward and
Note: Failure criterion; IR ≥ 200µA at VR = 10V
3.0 — — mA VF = 1V
— — 100 µAVR = 10V
30 V
15 mA
= 20pF
reverse direction 1 pulse.
L
–1
10
–2
10
F
–3
10
–4
10
Forward current I (A)
–5
10
–6
10
0 0.4 0.8
Forward voltage V (V)
1.2 1.6
F
Fig.1 Forward current Vs. Forward voltage
2.0
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