HM9264B Series
64 k SRAM (8-kword × 8-bit)
ADE-203-618C (Z)
Rev. 3.0
Nov. 1997
Description
The Hitachi HM9264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance
and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil
SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.
Features
• High speed
Fast access time: 85/100 ns (max)
• Low power
Standby: 10 µW (typ)
Operation: 15 mW (typ) (f = 1 MHz)
• Single 5 V supply
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
Three state output
• Directly TTL compatible
All inputs and outputs
• Battery backup operation capability
Note: HM9264B series can't be applied for Aerospace, Aircraft, Nucleus Plants, Main Flame
Computers, Medical Life-support System, and Automobile Engine Control and Industrial
machines. (e.g. Communication Hubs, NC, and others.)
Ordering Information
Type No. Access time Package
HM9264BLFP-8L
HM9264BLFP-10L
HM9264BLP-8L
HM9264BLP-10L
85 ns
100 ns
85 ns
100 ns
450-mil, 28-pin plastic SOP(FP-28DA)
600-mil, 28-pin plastic DIP (DP-28)
HM9264B Series
Pin Arrangement
HM9264BLFP/BLP Series
1
NC
A12
A7
A6
A4
A0
I/O1
I/O2
I/O3
V
SS
2
3
4
5A5
6
7A3
8A2
9A1
10
11
12
13
14
28
27
24
23
22
21
20
19
18
(Top view)
V
CC
WE
CS226
A825
A9
A11
OE
A10
CS
I/O8
I/O7
I/O617
I/O516
I/O415
Pin Description
Pin name Function
A0 to A12 Address input
I/O1 to I/O8 Data input/output
CS1 Chip select 1
CS2 Chip select 2
WE Write enable
OE Output enable
NC No connection
V
CC
V
SS
Power supply
Ground
HM9264B Series
Function Table
WE CS1 CS2 OE Mode VCC current I/O pin Ref. cycle
× H ××Not selected (power down) I
××L × Not selected (power down) ISB, I
H L H H Output disable I
H L H L Read I
L L H H Write I
L L H L Write I
, I
SB
SB1
SB1
CC
CC
CC
CC
Note: ×: H or L
Absolute Maximum Ratings
Parameter Symbol Value Unit
Power supply voltage
Terminal voltage
*1
*1
Power dissipation P
Operating temperature Topr 0 to + 70 °C
Storage temperature Tstg –55 to +125 °C
Storage temperature under bias Tbias –10 to +85 °C
Notes: 1. Relative to V
SS
2. VT min: –3.0 V for pulse half-width ≤ 50 ns
3. Maximum voltage is 7.0 V
V
CC
V
T
T
–0.5 to +7.0 V
–0.5*2 to VCC + 0.3*3V
1.0 W
High-Z —
High-Z —
High-Z —
Dout Read cycle (1)–(3)
Din Write cycle (1)
Din Write cycle (2)
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter Symbol Min Typ Max Unit
Supply voltage V
Input high voltage V
Input low voltage V
CC
V
SS
IH
IL
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 50 ns
4.5 5.0 5.5 V
000V
2.2 — VCC + 0.3 V
*1
–0.3
— 0.8 V
HM9264B Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ±10%, VSS = 0 V)
Parameter Symbol Min Typ*1Max Unit Test conditions
Input leakage current |I
Output leakage current |ILO|——2µA CS1 = VIH or CS2 = VIL or OE = VIH or
Operating power supply
current
Average operating power
supply current
Standby power supply
current
Output low voltage V
Output high voltage V
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
|——2µA Vin = VSS to V
LI
WE = V
I
CCDC
— 7 15 mA CS1 = VIL, CS2 = VIH, I
others = V
I
CC1
— 30 45 mA Min cycle, duty = 100%,
CS1 = V
others = V
I
CC2
— 3 5 mA Cycle time = 1 µs, duty = 100%, I
CS1 ≤ 0.2 V, CS2 ≥ V
V
≥ VCC – 0.2 V, VIL ≤ 0.2 V
IH
I
SB
I
SB1
—1 3 mACS1 = VIH, CS2 = V
—2 50µA CS1 ≥ VCC – 0.2 V, CS2 ≥ VCC – 0.2 V or
0 V ≤ CS2 ≤ 0.2 V, 0 V ≤ Vin
OL
OH
— — 0.4 V IOL = 2.1 mA
2.4 — — V IOH = –1.0 mA
CC
, V
= V
IL
I/O
IH/VIL
, CS2 = VIH, I
IL
IH/VIL
SS
to V
CC
IL
CC
= 0 mA
I/O
= 0 mA
I/O
– 0.2 V,
= 0 mA
I/O
Capacitance (Ta = 25°C, f = 1.0 MHz)
Parameter Symbol Min Typ Max Unit Test conditions
Input capacitance
Input/output capacitance
*1
*1
Note: 1. This parameter is sampled and not 100% tested.
Cin — — 5 pF Vin = 0 V
C
I/O
——7 pFV
= 0 V
I/O