HIT 2SK2851 Datasheet
Features
• Low on-resistance
R
= 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A)
DS(on)
• 4V gate drive devices.
• Large current capacitance
ID = 5 A
Outline
2SK2851
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-478
1st. Edition
TO-92MOD.
G
D
3
2
1
S
1. Source
2. Drain
3. Gate
2SK2851
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
3
3
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
60 V
±20 V
5A
20 A
5A
5A
2.14 mJ
0.9 W
2
2SK2851
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
60——V I
voltage
Gate to source breakdown
V
(BR)GSS
±20——V I
voltage
Zero gate voltege drain
I
DSS
——10µAV
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GSS
GS(off)
DS(on)
DS(on)
——±10 µAV
1.0 — 2.0 V ID = 1mA, VDS = 10V
— 0.055 0.07 Ω ID = 2.5A, VGS = 10V*
— 0.07 0.1 Ω ID = 2.5A, VGS = 4V*
Forward transfer admittance |yfs|57—SI
Input capacitance Ciss — 500 — pF VDS = 10V
Output capacitance Coss — 260 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
— 10 — ns VGS = 10V, ID = 2.5A
— 30 — ns RL = 12Ω
— 100 — ns
—75—ns
— 0.9 — V ID = 5A, VGS = 0
voltage
Body to drain diode reverse
t
rr
— 50 — ns IF = 5A, VGS = 0
recovery time
Note: 1. Pulse test
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
= 60 V, VGS = 0
DS
= ±16V, VDS = 0
GS
= 2.5A, VDS = 10V*
D
diF/ dt = 50A/µs
1
1
1
3
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