HIT 2SK2828 Datasheet

2SK2828
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance
Low drive current
No secondary breakdown
Suitable for switching regulator and DC–DC converter
Avalanche ratings
ADE-208-514 C (Z)
4th. Edition
Feb 1999
Outline
TO–3P
1
G
D
2
1. Gate
1
2
3
S
3
2. Drain (Flange)
3. Source
2SK2828
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
700 V ±30 V 12 A 48 A 12 A 175 W
2
2SK2828
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
R
DS(on)
resistance Forward transfer admittance |yfs| 5.5 9.0 S ID = 6A, VDS = 10V* Input capacitance Ciss 1850 pF VDS = 10V Output capacitance Coss 400 pF VGS = 0 Reverse transfer capacitance Crss 45 pF f = 1MHz Total gate charge Qg 35 nc VDD = 400V Gate to source charge Qgs 8 nc VGS = 10V Gate to drain charge Qgd 10 nc ID = 12A Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time Note: 3. Pulse test
700 V ID = 10mA, VGS = 0 ±30——V I ——±10 µAV 100 µAV
= ±100µA, VDS = 0
G
= ±25V, VDS = 0
GS
= 560 V, VGS = 0
DS
2.0 3.0 V ID = 1mA, VDS = 10V* — 0.9 1.2 ID = 6A, VGS = 10V*
25 ns ID = 6A, RL = 5 65 ns VGS = 10V — 140 ns —55—ns — 0.95 V IF = 12A, VGS = 0 — 2.5 µsI
= 12A, VGS = 0
F
diF/ dt =100A/µs
3
3
3
3
Loading...
+ 7 hidden pages