2SK2828
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC–DC converter
• Avalanche ratings
ADE-208-514 C (Z)
4th. Edition
Feb 1999
Outline
TO–3P
1
G
D
2
1. Gate
1
2
3
S
3
2. Drain
(Flange)
3. Source
2SK2828
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
700 V
±30 V
12 A
48 A
12 A
175 W
2
2SK2828
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
R
DS(on)
resistance
Forward transfer admittance |yfs| 5.5 9.0 — S ID = 6A, VDS = 10V*
Input capacitance Ciss — 1850 — pF VDS = 10V
Output capacitance Coss — 400 — pF VGS = 0
Reverse transfer capacitance Crss — 45 — pF f = 1MHz
Total gate charge Qg — 35 — nc VDD = 400V
Gate to source charge Qgs — 8 — nc VGS = 10V
Gate to drain charge Qgd — 10 — nc ID = 12A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
700 — — V ID = 10mA, VGS = 0
±30——V I
——±10 µAV
— — 100 µAV
= ±100µA, VDS = 0
G
= ±25V, VDS = 0
GS
= 560 V, VGS = 0
DS
2.0 — 3.0 V ID = 1mA, VDS = 10V*
— 0.9 1.2 Ω ID = 6A, VGS = 10V*
— 25 — ns ID = 6A, RL = 5Ω
— 65 — ns VGS = 10V
— 140 — ns
—55—ns
— 0.95 — V IF = 12A, VGS = 0
— 2.5 — µsI
= 12A, VGS = 0
F
diF/ dt =100A/µs
3
3
3
3