HIT 2SC4988 Datasheet
2SC4988
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 8.5 GHz Typ
• High gain, low noise figure
PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz
ADE-208-004
1st. Edition
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SC4988
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 1.1 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
T
Power gain PG 7.5 10.5 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.3 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “FR”.
15——V I
——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA
5.5 8.5 — GHz VCE = 5 V, IC = 20 mA
15 V
9V
1.5 V
100 mA
1
800*
= 10 µA, IE = 0
C
= 9 V, RBE = ∞
CE
mW
f = 900 MHz
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC4988
Collector Power Dissipation Curve
1600
1200
800
400
(on the alumina ceramic board)
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
12
V = 5 V
CE
10
T
8
6
DC Current Transfer Ratio
vs. Collector Current
200
V = 5V
CE
FE
160
120
80
40
DC Current Transfer Ratio h
0
1 2 5 10 20 100
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
1.8
I = 0
E
f = 1 MHz
1.6
1.4
50
4
2
Gain Bandwidth Product f (GHz)
0
1 2 5 10 20 10050
Collector Current I (mA)
C
1.2
1.0
Collector Output Capacitance Cob (pF)
0.8
0.5
12 51020
Collector to Base Voltage V (V)
CB
3
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